Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences
| Data(s) |
2005
|
|---|---|
| Resumo |
Photo luminescence (PL) spectroscopy has been used to study InP annealed in phosphorus and iron phosphide ambiences. Noticeable PL emissions related with thermally induced defects have been detected in undoped InP annealed in iron phosphide ambience. Origins of the PL emissions have been discussed. (c) 2004 Elsevier Ltd. All rights reserved. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhao, YW; Dong, HW; Li, JM; Ling, LY .Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences ,MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,AUG 2005,8 (4):531-535 |
| Palavras-Chave | #半导体材料 #indium phosphide |
| Tipo |
期刊论文 |
