The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers
| Data(s) |
2009
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| Resumo |
Two emission peaks were observed in the low temperature photoluminescence (LTPL) spectra of an InGaN/GaN multiple quantum well (MQW) structure before and after nanopillar fabrication. After nanopillar fabrication it is found that among the two peaks the longer wavelength peak exhibits a clear blue shift and has a much stronger enhancement in LTPL intensity than the shorter one. Combined with x-ray diffraction and spatially resolved cathodoluminescence analyses, the difference induced by nanopillar fabrication is ascribed to different strain relaxation states in the lower and upper quantum well layers. It is found that the lower QW layers of the as-grown MQW which causes the longer wavelength PL peak are more strained, while the upper ones are almost fully strain-relaxed. Therefore, the nanopillar fabrication induces much less strain relaxation in the upper part of the MQW than in the lower one. National Natural Science Foundation of China 60506001 607760476097604560836003National Basic Research Programme of China 2007CB936700 National Science Foundation for Distinguished Young Scholars 60925017 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhu, JH (Zhu, J. H.); Wang, LJ (Wang, L. J.); Zhang, SM (Zhang, S. M.); Wang, H (Wang, H.); Zhao, DG (Zhao, D. G.); Zhu, JJ (Zhu, J. J.); Liu, ZS (Liu, Z. S.); Jiang, DS (Jiang, D. S.); Qiu, YX (Qiu, Y. X.); Yang, H (Yang, H.) .The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,DEC 7 2009,42(23):Art.No.235104 |
| Palavras-Chave | #半导体物理 #MULTIPLE-QUANTUM WELLS |
| Tipo |
期刊论文 |
