Si-based membrane resonant cavity enhanced photodetectors

Si-based membrane RCE photodetectors were introduced. The RCE photodiodes were fabricated on silicon membranes formed from SOI substrate. Compared with the conventional p-i-n photodiode, the responsivity has a threefold enhancement.

Fabrication of low cost Si-based tunable high performance resonant cavity enhanced photodetectors

Low cost Si-based tunable InGaAs RCE photodetectors operating at 1.3similar to1.6 mum were fabricated using sol-gel bonding. A tuning range of 14.5 nm, a quantum efficiency of 44% at 1476 nm and a 3-dB bandwidth of 1.8 GHz were obtained.

1.55 mu m Ge islands resonant-cavity-enhanced narrowband detector

The high quality Ge islands material with 1.55 mu m photo-response grown on Sol substrate is reported. Due to the modulation of the cavity formed by the mirrors at the surface and the buried SiO2 interface, seven sharp and strong peaks with narrow linewidth are found. And a 1.55 mu m Ge islands resonant-cavity-enhanced (RCE) detector with narrowband was fabricated by a simple method. The bottom mirror was deposited in the hole formed by anisotropically etching, in a basic solution from the backside of the sample with the buried SiO2 layer in silicon-on-insulator substrate as the etch-stop layer. Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2-1.65 mu m. The peak responsivity of the RCE detector at 1543.8 nm is 0.028 mA/W and a full width at half maximum of 5 nm is obtained. Compared with the conventional p-i-n photodetector, the responsivity of RCE detector has a nearly threefold enhancement.

一个三维需求模型及其对涉众协同的支持

在多涉众(stakeholder)参加的协同开发活动中,不同的涉众关注软件开发的不同方面,例如技术、过程、人.由于涉众的"赢条件(win condition)"之间的相互影响冲突往往是隐含的,所以,它们之间的冲突不容易被发现,导致各方共赢的均衡状态难以达成.提出了一个三维的需求模型TRISO-RM(tri-dimensional integrated software requirements model),通过它来描述和集成涉众对于软件开发不同方面的赢条件.在此基础上,通过由一组互相依赖的制品、活动、参与者所构成的TRISO-Element作为媒介,以发现、建立和维护不同赢条件之间的关系.基于TRISO-RM,分析了涉众目标冲突的一种典型形式——模型冲突(model clash)所发生的机理,并给出了发现与解决的过程.通过在软件质量管理平台SoftPM的开发中的实践应用,TRISO-RM方法对于涉众协同支持的有效性得到了验证.

纤维素直接发酵乙醇微生物的选育──Ⅲ.里氏木霉与运动发酵单胞原生质体融合的研究

用聚乙二醇（PEG）作为诱导剂，可使钝化的里氏木霉（Tri－chodermareesei）QM9414的原生质体和运动发酵单胞（Zymomonasmobilis）ATCC29191的原生质球之间可以产生远缘的细胞融合子。融合率可达1.9×10－2融合子能利用羧甲基纤维素为唯一碳源而产生羧甲基纤维素酶和乙醇。羧甲基纤维素酶活性高和乙醇产量高的融合子不稳定。这些融合子的产酶能力很容易大部分丧失，而产乙醇的能力亦很低。而酶活及乙醇产量较低的融合子，可能才是真正的基因重组子。

24-二甲基戊二稀土化合物的合成

本文叙述了2.4-二甲基戊二烯基稀土金属有机化合物的合成并通过元素分析，红外光谱、核磁共振谱及质谱的鉴定。测定了Gd(2.4-GH_(11))_3的单晶结构，此外还合成了（2.4-GH_(11)K.TMEDA及K_2C_8H_8·3THF并也测定了它们的晶体结构。在所合成化合物的红外光谱中，没有属于C=C双键的吸收峰，表明分子中配位体以η~5形式的大π键体系与稀土金属离子结合，在Ln(2.4-GH_(11))_2Cl·TMF和Ln(2.4-GH_(11))Cl_2·GH_THF的红外光谱中，于1060波数附近出现一强而宽的吸收峰，即化合物中有四氢呋喃分子络合。化合物的室温NMR谱有四个吸收峰，2.4-二甲基戊二烯配位体可能为η~5平面∪或W构型。化合物的水解'H-NMR谱与质谱都证实水解产物为2.4－二甲基－1.3－戊二烯。它是－2.4二甲基戊二烯阴离子水解所得的唯一产物，它表明化合物中的配位体确为2.4－二甲基戊二烯阴离子。(2.4-GH_(11))_2Cl·TMDA配合物晶体结构是应用低温X－射线衍射技术用Nicolet R_3 M/E型四园衍射仪LT－1低温装置并利用重原子法测定的最小二乘法精修至收敛时的一致性因子R=0.055. Rw=0.057。晶体属单斜晶系P21/n空间群。晶胞参数a=11.322(4)A, b=9.242(3)A, c=15.956(5)A. β=106.70(3)分子中2.4－二甲基戊二烯阴离子呈平面∪构型。钾离子与四甲基乙二胺二啮体结合形成的络合阳离子和2.4-二甲基戊二烯阴离子相间排列形成无限链状结构分子。2.4－二甲基戊二烯阴离子的C－C键长明显分为中间与外端C－C键两组。外端组C－C键双性质较强键长较短。表明C3具有负电荷的共振杂化体贡献较大。分子中K－C键最短的是K-C(1.5)。而不是具有较多负电荷的C3－K键。这可能是由于几何因素造成的。K_2C_8H_8·3THF的晶体结构是采用与前者相同的方法测定的。它属三斜晶系，PT空间群，晶胞参数a=10.263(3)A, b=13.157(4)A, c=9.443A, α=87.51(2)°, β=114.93(2)°, γ=76.81(2)°. V=1111.6A, R=0.051. 晶体中负二价的环辛四烯阴离呈平面构型，具有中心对称性，两侧与两中心对称相关的钾离子连接，相邻的非等效的钾离子间通过两四氢呋喃分子的氧原子相连接，从而形成了无限链状结构的分子。环辛四烯反映了Huckel的4n+2芳香性规则。该结构的特别之处在于四氢呋喃分子的氧原子以桥键形式与两个钾离子同时连接。而这种形式的桥键在其它化合物中似还未发现。Go(2.4-GH_(11))_3的晶体结构亦是采用与前述相同的方法测定的。其晶体为三斜晶系，PT空间群，晶胞参数a=12.541A, b=12.853A, c=8.432A, α=91.44°, β=108.61°, γ=117.97°, V=112.54A~3. 结构测定表明，Gd(2.4-GH_(11))_3分子具有C_3h对称性。三个配位体阴离了的九个带负电荷的碳原子近似以三帽三角棱柱形式与钆离子配位。分子中2.4－二甲基戊二烯阴离子的C－C键长－亦分为而组。外端C－C键较中间C－C键强，键长较短，亦表明C3具有较多的负电荷。2.4－二甲基戊二烯阴离子本身近似呈平面∪构型。C2,C4偏离由C1 C3 C5三碳原子构成的平面0.067A。方向上远离中心钆离子。可能在此以离子性为主的化合物中，钆离子与不带电荷的C2 C4间的相互作用有些排斥性质。与Nd(2.4-GH_(11))_3不同的是，在Gd(2.4-GH_(11))_3分子中，Gd-(C(1,5）键最短，而不是Gd-C(3)键。这可能是由于钆离子的半径较小，化合物的空间位阻效应较大所致。

取代环戊二烯基稀土有机氯化物的合成及其反应

本文通过无水LnCl_3(Ln = Pr.Nd.Gd)与两倍摩尔的叔丁基环戊二烯基碱金属盐在THF中60－80℃反应，分离到一类新的二（叔丁基环戊二烯基）稀土氯化物（T-DuCp）_2 2net.nTHF (Ln = Pr,Nd,n = 2 Ln = Gd,n = 1)，对它们进行了元素分析。红外光谱及水鲜色质谱的表征。对于配合物（t-BuCp）_2PrCl·2THF的单晶，测定了它的晶体结构，晶体层单斜晶系P21/C空间群，晶胞参数为：a = 15.080 b = 8.855 c = 21.196A, β = 110.34°V = 2653.9A~3 δ = 4，结构分析表明此配合物是一中性的单分子配合物。最后的R = Rw = 0.058平均Pr-C.2.81 Pr-Cent 2.53A, Pr-Cl及Rr-O键长分别为2.72与2.62A。本文通过Lnel_3(Ln = Nd.Pr.Ga)与等摩尔的叔丁基环戊二烯基碱金属盐在THF中60－80℃反应，分离到一类中性的单(叔丁基环戊二烯基)稀土二氯化物，并对它们进行了元素分析，红外光谱及水鲜色质谱的表征。本文通过轻稀土元素La,Pr的三氯化物与带基钠以1:2摩尔比在THF中70－80℃反应，分离到了二带基轻稀土氯化物（CaH_7）_2LaCl.2THF及[(CqH_7)_2PrCl.THF]_2。并且对此二配合物进行了元素分析。红外光谱及水鲜色质谱的表征。对于[(CuH_7)_2PrCl.TH]_2配合物，测定了它的晶体结构，这是第一个得到结构表征的茚基稀土氯化物，晶体层于单斜晶系，P_(21)/C空间群，晶胞参数为a = 7.808 b = 17.796 c = 14.070A β = 93.97°v = 1950.31A. E = 2最后的R = 0.045. Rw = 0.039结构分析表明此配合物以中性的二聚体形式存在。平均的Pr-C.2.81 Pr-Cent 2.53. Pr-Cl.2.84H Pr-O钻长2.54A。为了进一步研究不同配体对配合物结构的影响，我们还研究了Gael_3与Nae_5Mes以1:1摩尔比在THF中的反应，分离到了两种配合物[(NaTHF)(C_5MesGd.THF)_2Cl_5]_2.6THF(I)及L_5Me_5GdCl2.3THF(II)并且对配合物（I），测定了它的晶体结构，晶体层于三斜晶系。Pi空间群。晶胞参数a = 12.183 b = 13.638 c = 17.883A, α = 110.38 β = 94.04 γ = 99.44°, V = 2721.20A, E = 1。结构分析表明，此配合物是一种以两个Na原子通过THF中的O原子而桥联的金层有机配合物，在结构上有十分新颖的特点。在此配合物分子中含有四个Gd原子及二个Na原子，Na及Gd间以Cl桥键相联结，Gd-Gd_2 = 4.033 Gdll-Na = 2.818A。最后的R = 0.04M Rw = 0.042。本文还对（t-BuCp）_2P_2Cl.2THF与NaH及LiAlH4的反应进行了初步的研究，分离到（t-Bucp）_2PrH.2THF及(t-Bucp)_2P_2RIH_4.3THF两种新的氢化物，并且对它们进行了元素分析，红外光谱的表征，对于它们水鲜产物的气相分中的H_2，用气相色谱法进行了定性表征。

Electronic structure and magnetic coupling properties of Gd-doped AlN: first-principles calculations

In this work, the electronic structure and magnetic coupling properties of Gd doped AlN have been investigated using first-principles method. We found that in the AlN:Gd system, due to the s-f coupling allowed by the symmetry, the exchange splitting of the conduction band is much larger than that of the valence band, which makes the electron-mediated ferromagnetism possible in this material. This property is also confirmed by the energy differences between anti-ferromagnetic and ferromagnetic phase for Al14Gd2N16 with different concentrations of electrons (holes), as well as by the calculated exchange constants. The result indicates that Gd-doped AlN is a promising candidate for the applications in future spintronic devices.

Temperature-stimulated abnormal annealing of neutron-induced damage in high-resistivity silicon detectors

Neutron-irradiated high-resistivity silicon detectors have been subjected to elevated temperature annealing (ETA). It has been found that both detector full depletion voltage and leakage current exhibit abnormal annealing (or ''reverse annealing'') behaviour for highly irradiated detectors: increase with ETA. Laser induced current measurements indicate a net increase of acceptor type space charges associated with the full depletion voltage increase after ETA. Current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) data show that the dominant effect is the increase of a level at 0.39 eV below the conduction band (E(c) - 0.39 eV) or a level above the valence band (E(v) + 0.39 eV). Candidates tentatively identified for this level are the singly charged double vacancy (V-V-) level at E(c) - 0.39 eV, the carbon interstitial-oxygen interstitial (C-i-O-i) level at E(v) + 0.36 eV, and/or the tri-vacancy-oxygen center (V3O) at E(v) + 0.40 eV.

高功率14xx nm锥形增益区脊形波导结构量子阱激光器的研制

初步设计14xx nm锥形增益区脊形波导量子阱激光器材料和器件结构，利用MOCVD生长14xx nm In—GaAsP／InP量子阱激光器外延片，引入腔破坏凹槽（cavity—spoiling grooves）将有源层刻蚀断以隔离从锥形区反向传输回的高阶模，进一步改善远场光束质量．保持总腔长1900μm不变，改变脊形区的长度，其长度分别为450，700和950μm．对比三种情况的最高输出功率和远场特性，发现L_(RW)=700μm时，器件特性参数和远场光柬质量最优，斜率效率为0．32W／A，饱和输出功率为1．21W，其远场为近衍射极限的高斯分布，发散角为29°×9．6°．当固定脊形区长度为700μm，改变锥形区长度，发现当锥形区长度为1000μm时，器件特性参数进一步提高，斜率效率达0．328W／A，饱和输出功率为1．27W，远场仍为近似高斯分布．

High-Power Distributed Feedback Laser Diodes Emitting at 820nm

By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide（RW） AlGaInAs/AlGaAs distributed feedback（DFB） laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode. The Al-free grating surface permits the re-growth of a high-quality cladding layer that yields excellent device performance. The threshold current of these laser diodes is 57mA,and the slope efficiency is about 0.32mW/mA.

Tunable Distributed Bragg Reflector Laser Fabricated by Bundle Integrated Guide

The tunable BIG-RW distributed Bragge reflector lasers with two different coupling coefficient gratings are proposed and fabricated.The threshold current of the laser is 38mA and the output power is more than 8mW.The tunable range of tthe laser is 3.2nm and the side moded suppression ratio is more than 30dB.The variation of the output power within the tunable wavelength range is less than 0.3dB

Fabrication of 1.3 mu m Si-based MEMS tunable optical filter

In this paper we report the fabrication of 1.3 mum Si-based MEMS tunable optical filter, by surface micromaching. Through wet etching of polyimide sacrificial layer, a tunable Fabry-Perot filter was successfully fabricated. We make the capacitance measurement of the prototype device, compare the experimental curve with the theoretical one, and explain the difference between them.

High-speed DFB laser and EMLs

High speed reliable 1.55 mum AlGaInAs multi-quantum well ridge waveguide (RW) DFB laser is developed with a 9GHz -3dB bandwidth. A high speed self aligned constricted mesa 1.55 mum DFB laser is achieved with a 9.1GHz -3dB bandwidth and a more than 20mW output power. A cost effective single RW electroabsorption modulated DFB laser (EMLs) is proposed and successfully fabricated by adopting selective area growth techniques:. a penalty free transmission at 2.5Gbps over 280Km normal G.652 single mode fiber is realized by using this EML as light source. For achieving a better performance EMLs. a gain-coupled DFB laser with etched quantum wells is successfully integrated with a electroabsorption modulator (EAM) for a high single mode yield. the wavelength of a EML is tuned in a 3.2nm range by a integrated thin-film heater for the wavelength routing. a buried heterostructure DFB laser is also successfully integrated with a RW EAM for a lower threshold current. lower EAM parasitic capacitance and higher output power.

Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells

Photoluminescence (PL) of strained SiGe/Si multiple quantum wells (MQW) with flat and undulated SiGe well layers was studied at different temperature. With elevated temperature from 10K, the no-phonon (NP) peak of the SiGe layers in the flat sample has firstly a blue shift due to the dominant transition converting from bound excitons (BE) to free excitons (FE), and then has a red shift when the temperature is higher than 30K because of the narrowing of the band gap. In the undulated sample, however, monotonous blue shift was observed as the temperature was elevated from 10 K to 287 K. The thermally activated electrons, confined in Si due to type-II band alignment, leak into the SiGe crest regions, and the leakage is enhanced with the elevated temperature. It results in a blue shift of the SiGe luminescence spectra.