Si-based membrane resonant cavity enhanced photodetectors
| Data(s) |
2005
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|---|---|
| Resumo |
Si-based membrane RCE photodetectors were introduced. The RCE photodiodes were fabricated on silicon membranes formed from SOI substrate. Compared with the conventional p-i-n photodiode, the responsivity has a threefold enhancement. Si-based membrane RCE photodetectors were introduced. The RCE photodiodes were fabricated on silicon membranes formed from SOI substrate. Compared with the conventional p-i-n photodiode, the responsivity has a threefold enhancement. zhangdi于2010-03-29批量导入 zhangdi于2010-03-29批量导入 IEEE. Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China IEEE. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
| Fonte |
Cheng, BW; Yao, F; Xue, CL; Zhang, JU; Mao, RW; Li, CB; Luo, LP; Zuo, YH; Wang, QM .Si-based membrane resonant cavity enhanced photodetectors .见：IEEE .2005 2nd IEEE International Conference on Group IV Photonics,345 E 47TH ST, NEW YORK, NY 10017 USA ,2005,105-107 |
| Palavras-Chave | #光电子学 #1.3 MU-M |
| Tipo |
会议论文 |
