Fabrication of low cost Si-based tunable high performance resonant cavity enhanced photodetectors
| Data(s) |
2004
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|---|---|
| Resumo |
Low cost Si-based tunable InGaAs RCE photodetectors operating at 1.3similar to1.6 mum were fabricated using sol-gel bonding. A tuning range of 14.5 nm, a quantum efficiency of 44% at 1476 nm and a 3-dB bandwidth of 1.8 GHz were obtained. Low cost Si-based tunable InGaAs RCE photodetectors operating at 1.3similar to1.6 mum were fabricated using sol-gel bonding. A tuning range of 14.5 nm, a quantum efficiency of 44% at 1476 nm and a 3-dB bandwidth of 1.8 GHz were obtained. zhangdi于2010-03-29批量导入 zhangdi于2010-03-29批量导入 IEEE. Chinese Acad Sci, Inst Semicond, State Key Joint Lab Integrated Optoelect, Beijing 100083, Peoples R China IEEE. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
| Fonte |
Mao, RW; Li, CB; Zuo, YH; Cheng, BW; Teng, XG; Luo, LP; Yu, JZ; Wang, QM .Fabrication of low cost Si-based tunable high performance resonant cavity enhanced photodetectors .见：IEEE .2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS,345 E 47TH ST, NEW YORK, NY 10017 USA ,2004,104-106 |
| Palavras-Chave | #光电子学 #QUANTUM-EFFICIENCY |
| Tipo |
会议论文 |
