Ultra high frequency thin film saw devices

Durante los últimos años el flujo de datos en la transmisión que tiene lugar en los sistemas de comunicación ha aumentado considerablemente de forma que día a día se requieren más aplicaciones trabajando en un rango de frecuencias muy alto (3-30 GHz). Muchos de estos sistemas de comunicación incluyen dispositivos de onda acústica superficial (SAW) y por tanto se hace necesario el aumento de frecuencia a la que éstos trabajan. Pero este incremento de frecuencia de los dispositivos SAW no sólo es utilizado en los sistemas de comunicación, varios tipos de sensores, por ejemplo, aumentan su sensibilidad cuando la frecuencia a la que trabajan también lo hace. Tradicionalmente los dispositivos SAW se han fabricado sobre cuarzo, LiNbO3 y LiTaO3 principalmente. Sin embargo la principal limitación de estos materiales es su velocidad SAW. Además, debido a la alta temperatura a la que se depositan no pueden ser integrados en la tecnología de fabricación CMOS. El uso de la tecnología de capa delgada, en la que un material piezoeléctrico es depositado sobre un substrato, se está utilizando en las últimas décadas para incrementar la velocidad SAW de la estructura y poder obtener dispositivos trabajando en el rango de frecuencias requerido en la actualidad. Por otra parte, esta tecnología podría ser integrada en el proceso de fabricación CMOS. Durante esta tesis nos hemos centrado en la fabricación de dispositivos SAW trabajando a muy alta frecuencia. Para ello, utilizando la tecnología de capa delgada, hemos utilizado la estructura nitruro de aluminio (AlN) sobre diamante que permite conseguir velocidades SAW del sustrato que no se pueden alcanzar con otros materiales. El depósito de AlN se realizó mediante sputtering reactivo. Durante esta tesis se han realizado diferentes experimentos para optimizar dicho depósito de forma que se han obtenido los parámetros óptimos para los cuales se pueden obtener capas de AlN de alta calidad sobre cualquier tipo de sustrato. Además todo el proceso se realizó a baja temperatura para que el procesado de estos dispositivos pueda ser compatible con la tecnología CMOS. Una vez optimizada la estructura AlN/diamante, mediante litografía por haz de electrones se fabricaron resonadores SAW de tamaño nanométrico que sumado a la alta velocidad resultante de la combinación AlN/diamante nos ha permitido obtener dispositivos trabajando en el rango de 10-28 GHz con un alto factor de calidad y rechazo fuera de la banda. Estás frecuencias y prestaciones no han sido alcanzadas por el momento en resonadores de este tipo. Por otra parte, se han utilizado estos dispositivos para fabricar sensores de presión de alta sensibilidad. Estos dispositivos son afectados altamente por los cambios de temperatura. Se realizó también un exhaustivo estudio de cómo se comportan en temperatura estos resonadores, entre -250ºC y 250ºC (rango de temperaturas no estudiado hasta el momento) diferenciándose dos regiones una a muy baja temperatura en la que el dispositivo muestra un coeficiente de retraso en frecuencia (TCF) relativamente bajo y otra a partir de los -100ºC en la que el TCF es similar al observado en la bibliografía. Por tanto, durante esta tesis se ha optimizado el depósito de AlN sobre diamante para que sea compatible con la tecnología CMOS y permita el procesado de dispositivos trabajando a muy alta frecuencia con altas prestaciones para comunicaciones y sensores. ABSTRACT The increasing volume of information in data transmission systems results in a growing demand of applications working in the super-high-frequency band (3–30 GHz). Most of these systems work with surface acoustic wave (SAW) devices and thus there is a necessity of increasing their resonance frequency. Moreover, sensor application includes this kind of devices. The sensitivity of them is proportional with its frequency. Traditionally, quartz, LiNbO3 and LiTaO3 have been used in the fabrication of SAW devices. These materials suffer from a variety of limitations and in particular they have low SAW velocity as well as being incompatible with the CMOS technology. In order to overcome these problems, thin film technology, where a piezoelectric material is deposited on top of a substrate, has been used during the last decades. The piezoelectric/substrate structure allows to reach the frequencies required nowadays and could be compatible with the mass electronic production CMOS technology. This thesis work focuses on the fabrication of SAW devices working in the super-high-frequency range. Thin film technology has been used in order to get it, especially aluminum nitride (AlN) deposited by reactive sputtering on diamond has been used to increase the SAW velocity. Different experiments were carried out to optimize the parameters for the deposit of high quality AlN on any kind of substrates. In addition, the system was optimized under low temperature and thus this process is CMOS compatible. Once the AlN/diamond was optimized, thanks to the used e-beam lithography, nanometric SAW resonators were fabricated. The combination of the structure and the size of the devices allow the fabrication of devices working in the range of 10-28 GHz with a high quality factor and out of band rejection. These high performances and frequencies have not been reached so far for this kind of devices. Moreover, these devices have been used as high sensitivity pressure sensors. They are affected by temperature changes and thus a wide temperature range (-250ºC to 250ºC) study was done. From this study two regions were observed. At very low temperature, the temperature coefficient of frequency (TCF) is low. From -100ºC upwards the TCF is similar to the one appearing in the literature. Therefore, during this thesis work, the sputtering of AlN on diamond substrates was optimized for the CMOS compatible fabrication of high frequency and high performance SAW devices for communication and sensor application.

Fabrication of GaN nanorods by focused ion beam

Ordered arrays of III-Nitride nanocolumns are excellent candidates for the fabrication of nano-optoelectronic devices. Different technologies such as e-beam lithography or colloidal lithography, have been used to obtain ordered arrays. All these technologies have in common several processing steps that can affect the crystalline growth of the nanocolumns. In this work, we present a single lithographic step that permits to grow ordered GaN nanocolumns with different geometries. The patterning is based in the use of a focused ion beam with different doses. With this method has been possible to create GaN nanopillars and nanocylinders.

Amplificador de potencia Clase F en banda L basado en tecnología GaN

This paper reports a high efficiency class-F power amplifier based on a gallium nitride high electron mobility transistor (GaN-HEMT), which is designed at the L band of 1640 MHz. The design is based on source and load pull measurements. During the design process, the parasitics of the package of the device are also taken into account in order to achieve the optimal class-F load condition at the intrinsic drain of the transistor. The fabricated class-F power amplifier achieved a maximum drain efficiency (DE) of 77.8% and a output power of 39.6 W on a bandwidth of 280 MHz. Simulation and measurement results have shown good agreement.

Low-cost retrofitting solutions for RC frames using masonry infill panels

A large number of reinforced concrete (RC) frame structures built in earthquake-prone areas such as Haiti are vulnerable to strong ground motions. Structures in developing countries need low-cost seismic retrofit solutions to reduce their vulnerability. This paper investigates the feasibility of using masonry infill walls to reduce deformations and damage caused by strong ground motions in brittle and weak RC frames designed only for gravity loads. A numerical experiment was conducted in which several idealized prototypes representing RC frame structures of school buildings damaged during the Port-au-Prince earthquake (Haiti, 2010) were strengthened by adding elements representing masonry infill walls arranged in different configurations. Each configuration was characterized by the ratio Rm of the area of walls in the direction of the ground motion (in plan) installed in each story to the total floor area. The numerical representations of these idealized RC frame structures with different values of Rm were (hypothetically) subjected to three major earthquakes with peak ground accelerations of approximately 0.5g. The results of the non-linear dynamic response analyses were summarized in tentative relationships between Rm and four parameters commonly used to characterize the seismic response of structures: interstory drift, Park and Ang indexes of damage, and total amount of energy dissipated by the main frame. It was found that Rm=4% is a reasonable minimum design value for seismic retrofitting purposes in cases in which available resources are not sufficient to afford conventional retrofit measures.

Scaling of the coercivity with the geometrical parameters in epitaxial Fe antidot arrays

We studied a series of square lattice antidot arrays, with diameter and lattice parameter from hundreds of nanometers to some microns, fabricated using two lithography techniques in epitaxial Fe(001) films. The coercivity increase of each array with respect to its base film can be scaled to a simple geometric parameter, irrespective of the lithography technique employed. Magnetic transmission x-ray microscopy studies, in arrays fabricated on polycrystalline Fe films deposited on silicon nitride membranes, evidenced the propagation of reversed domains from the edges of the arrays, in agreement with the coercivity analysis of the epitaxial arrays and with micromagnetic models.

Experiences on the specification of algorithms for fire and smoke control in road tunnels

The main objective of ventilation systems in case of fire is the reduction of the possible consequences by achieving the best possible conditions for the evacuation of the users and the intervention of the emergency services. The required immediate transition, from normal to emergency functioning of the ventilation equipments, is being strengthened by the use of automatic and semi-automatic control systems, what reduces the response times through the help to the operators, and the use of pre-defined strategies. A further step consists on the use of closed-loop algorithms, which takes into account not only the initial conditions but their development (air velocity, traffic situation, etc.), optimizing smoke control capacity.

Integration of cooperation for development in Survey Engineering curricula at the European Higher Education Area (EHEA) framework

Survey Engineering curricula involves the integration of many formal disciplines at a high level of proficiency. The Escuela de Ingenieros en Topografía, Cartografía y Geodesia at Universidad Politécnica de Madrid (Survey Engineering) has developed an intense and deep teaching on so-called Applied Land Sciences and Technologies or Land Engineering. However, new approaches are encouraged by the European Higher Education Area (EHEA). This fact requires a review of traditional teaching and methods. Furthermore, the new globalization and international approach gives new ways to this discipline to teach and learn about how to bridge gap between cultures and regions. This work is based in two main needs. On one hand, it is based on integration of basic knowledge and disciplines involved in typical Survey Engineering within Land Management. On the other, there is an urgent need to consider territory on a social and ethical basis, as far as a part of the society, culture, idiosyncrasy or economy. The integration of appropriate knowledge of the Land Management is typically dominated by civil engineers and urban planners. It would be very possible to integrate Survey Engineering and Cooperation for Development in the framework of Land Management disciplines. Cooperation for Development is a concept that has changed since beginning of its use until now. Development projects leave an impact on society in response to their beneficiaries and are directed towards self-sustainability. Furthermore, it is the true bridge to reduce gap between societies when differences are immeasurable. The concept of development has also been changing and nowadays it is not a purely economic concept. Education, science and technology are increasingly taking a larger role in what is meant by development. Moreover, it is commonly accepted that Universities should transfer knowledge to society, and the transfer of knowledge should be open to countries most in need for developing. If the importance of the country development is given by education, science and technology, knowledge transfer would be one of the most clear of ways of Cooperation for Development. Therefore, university cooperation is one of the most powerful tools to achieve it, placing universities as agents of development. In Spain, the role of universities as agents of development and cooperation has been largely strengthened. All about this work deals to how to implement both Cooperation for Development and Land Management within Survey Engineering at the EHEA framework.

Effect of substrate-target distance and sputtering pressure in the synthesis of AlN thin films

In this work, we analyze the influence of the processing pressure and the substrate–target distance on the synthesis by reactive sputtering of c-axis oriented polycrystalline aluminum nitride thin films deposited on Si(100) wafers. The crystalline quality of AlN has been characterized by high-resolution X-ray diffraction (HR-XRD). The films exhibited a very high degree of c-axis orientation especially when a low process pressure was used. After growth, residual stress measurements obtained indirectly from radius of curvature measurements of the wafer prior and after deposition are also provided. Two different techniques are used to determine the curvature—an optically levered laser beam and a method based on X-ray diffraction. There is a transition from compressive to tensile stress at a processing pressure around 2 mTorr. The transition occurs at different pressures for thin films of different thickness. The degree of c-axis orientation was not affected by the target–substrate distance as it was varied in between 30 and 70 mm.

Comportamiento estructural de elementos de fábrica reforzados con materiales compuestos avanzados solicitados a flexión y flexocompresión

El refuerzo de estructuras existentes mediante el encolado exterior de láminas de polímeros reforzados con fibras (FRP) se ha convertido en la aplicación más común de los materiales compuestos avanzados en construcción. Estos materiales presentan muchas ventajas frente a los materiales convencionales (sin corrosión, ligeros, de fácil aplicación, etc.). Pero a pesar de las numerosas investigaciones realizadas, aún persisten ciertas dudas sobre algunos aspectos de su comportamiento y las aplicaciones prácticas se llevan a cabo sólo con la ayuda de guías, sin que haya una normativa oficial. El objetivo de este trabajo es incrementar el conocimiento sobre esta técnica de refuerzo, y más concretamente, sobre el refuerzo a flexión de estructuras de fábrica. Con frecuencia el elemento reforzado es de hormigón armado y las láminas de FRP encoladas al exterior sirven para mejorar su resistencia a flexión, cortante o compresión (encamisados). Sin embargo su empleo en otros materiales como las estructuras de fábrica resulta muy prometedor. Las fábricas se caracterizan por soportar muy bien los esfuerzos de compresión pero bastante mal los de tracción. Adherir láminas de materiales compuestos puede servir para mejorar la capacidad resistente de elementos de fábrica sometidos a esfuerzos de flexión. Pero para ello, debe quedar garantizada una correcta adherencia entre el FRP y la fábrica, especialmente en edificios antiguos cuya superficie puede estar deteriorada por encontrarse a la intemperie o por el propio paso del tiempo. En el capítulo II se describen los objetivos fundamentales del trabajo y el método seguido. En el capítulo III se hace una amplia revisión del estado de conocimiento sobre el tema. En el apartado III.1 se detallan las principales características y propiedades mecánicas de fibras, matrices y materiales compuestos así como sus principales aplicaciones, haciendo especial hincapié en aspectos relativos a su durabilidad. En el apartado III.2 se incluye una revisión histórica de las líneas de investigación, tanto teóricas como empíricas, publicadas sobre estructuras de hormigón reforzadas a flexión encolando materiales compuestos. El apartado III.3 se centra en el aspecto fundamental de la adherencia refuerzo-soporte. Se hace un repaso a distintos modelos propuestos para prevenir el despegue distinguiendo si éste se inicia en la zona de anclaje o si está inducido por fisuras en la zona interior del elemento. Se observa falta de consenso en las propuestas. Además en este punto se relatan las campañas experimentales publicadas acerca de la adherencia entre materiales compuestos y fábricas. En el apartado III.4 se analizan las particularidades de las estructuras de fábrica. Además, se revisan algunas de las investigaciones relativas a la mejora de su comportamiento a flexión mediante láminas de FRP. El comportamiento mecánico de muros reforzados solicitados a flexión pura (sin compresión) ha sido documentado por varios autores, si bien es una situación poco frecuente en fábricas reales. Ni el comportamiento mecánico de muros reforzados solicitados a flexocompresión ni la incidencia que el nivel de compresión soportado por la fábrica tiene sobre la capacidad resistente del elemento reforzado han sido suficientemente tratados. En cuanto a los trabajos teóricos, las diferentes propuestas se basan en los métodos utilizados para hormigón armado y comparten los principios habituales de cálculo. Sin embargo, presentan diferencias relativas, sobre todo, a tres aspectos: 1) la forma de modelar el comportamiento de la fábrica, 2) el valor de deformación de cálculo del refuerzo, y 3) el modo de fallo que se considera recomendable buscar con el diseño. A pesar de ello, el ajuste con la parte experimental de cada trabajo suele ser bueno debido a una enorme disparidad en las variables consideradas. Cada campaña presenta un modo de fallo característico y la formulación que se propone resulta apropiada para él. Parece necesario desarrollar un método de cálculo para fábricas flexocomprimidas reforzadas con FRP que pueda ser utilizado para todos los posibles fallos, tanto atribuibles a la lámina como a la fábrica. En el apartado III.4 se repasan algunas lesiones habituales en fábricas solicitadas a flexión y se recogen ejemplos de refuerzos con FRP para reparar o prevenir estos daños. Para mejorar el conocimiento sobre el tema, se llevan a cabo dos pequeñas campañas experimentales realizadas en el Instituto de Ciencias de la Construcción Eduardo Torroja. La primera acerca de la adherencia de materiales compuestos encolados a fábricas deterioradas (apartado IV.1) y la segunda sobre el comportamiento estructural a flexocompresión de probetas de fábrica reforzadas con estos materiales (apartado IV.2). En el capítulo V se analizan algunos de los modelos de adherencia propuestos para prevenir el despegue del extremo del refuerzo. Se confirma que las predicciones obtenidas con ellos resultan muy dispares. Se recopila una base de datos con los resultados experimentales de campañas sobre adherencia de FRP a fábricas extraídas de la literatura y de los resultados propios de la campaña descrita en el punto IV.1. Esta base de datos permite conocer cual de los métodos analizados resulta más adecuado para dimensionar el anclaje de láminas de FRP adheridas a fábricas. En el capítulo VI se propone un método para la comprobación en agotamiento de secciones de fábrica reforzadas con materiales compuestos sometidas a esfuerzos combinados de flexión y compresión. Está basado en el procedimiento de cálculo de la capacidad resistente de secciones de hormigón armado pero adaptado a las fábricas reforzadas. Para ello, se utiliza un diagrama de cálculo tensión deformación de la fábrica de tipo bilineal (acorde con el CTE DB SE-F) cuya simplicidad facilita el desarrollo de toda la formulación al tiempo que resulta adecuado para predecir la capacidad resistente a flexión tanto para fallos debidos al refuerzo como a la fábrica. Además se limita la deformación de cálculo del refuerzo teniendo en consideración ciertos aspectos que provocan que la lámina adherida no pueda desarrollar toda su resistencia, como el desprendimiento inducido por fisuras en el interior del elemento o el deterioro medioambiental. En concreto, se propone un “coeficiente reductor por adherencia” que se determina a partir de una base de datos con 68 resultados experimentales procedentes de publicaciones de varios autores y de los ensayos propios de la campaña descrita en el punto IV.2. También se revisa la formulación propuesta con ayuda de la base de datos. En el capítulo VII se estudia la incidencia de las principales variables, como el axil, la deformación de cálculo del refuerzo o su rigidez, en la capacidad final del elemento. Las conclusiones del trabajo realizado y las posibles líneas futuras de investigación se exponen en el capítulo VIII. ABSTRACT Strengthening of existing structures with externally bonded fiber reinforced polymers (FRP) has become the most common application of advanced composite materials in construction. These materials exhibit many advantages in comparison with traditional ones (corrosion resistance, light weight, easy to apply, etc.). But despite countless researches have been done, there are still doubts about some aspects of their behaviour and applications are carried out only with the help of guidelines, without official regulations. The aim of this work is to improve the knowledge on this retrofitting technique, particularly in regard to flexural strengthening of masonry structures. Reinforced concrete is often the strengthened material and external glued FRP plates are used to improve its flexural, shear or compressive (by wrapping) capacity. However the use of this technique on other materials like masonry structures looks promising. Unreinforced masonry is characterized for being a good material to support compressive stresses but really bad to withstand tensile ones. Glue composite plates can improve the flexural capacity of masonry elements subject to bending. But a proper bond between FRP sheet and masonry must be ensured to do that, especially in old buildings whose surface can be damaged due to being outside or ageing. The main objectives of the work and the methodology carried out are described In Chapter II. An extensive overview of the state of art is done in Chapter III. In Section III.1 physical and mechanical properties of fibers, matrix and composites and their main applications are related. Durability aspects are especially emphasized. Section III.2 includes an historical overview of theoretical and empirical researches on concrete structures strengthened gluing FRP plates to improve their flexural behaviour. Section III.3 focuses on the critical point of bonding between FRP and substrate. Some theoretical models to prevent debonding of FRP laminate are reviewed, it has made a distinction between models for detachment at the end of the plate or debonding in the intermediate zones due to the effects of cracks. It is observed a lack of agreement in the proposals. Some experimental studies on bonding between masonry and FRP are also related in this chapter. The particular characteristics of masonry structures are analyzed in Section III.4. Besides some empirical and theoretical investigations relative to improve their flexural capacity with FRP sheets are reviewed. The mechanical behaviour of strengthened walls subject to pure bending (without compression) has been established by several authors, but this is an unusual situation for real masonry. Neither mechanical behaviour of walls subject to bending and compression nor influence of axial load in the final capacity of the strengthened element are adequately studied. In regard to theoretical studies, the different proposals are based on reinforced concrete analytical methods and share common design principles. However, they present differences, especially, about three aspects: 1) the constitutive law of masonry, 2) the value of ultimate FRP strain and 3) the desirable failure mode that must be looked for. In spite of them, a good agreement between each experimental program and its theoretical study is often exhibited due to enormous disparity in considered test parameters. Each experimental program usually presents a characteristic failure mode and the proposed formulation results appropriate for this one. It seems necessary to develop a method for FRP strengthened walls subject to bending and compression enable for all failure modes (due to FRP or masonry). Some common damages in masonry subject to bending are explained in Section III.4. Examples of FRP strengthening to repair or prevent these damages are also written. Two small experimental programs are carried out in Eduardo Torroja Institute to improve the knowledge on this topic. The first one is concerned about the bond between FRP plates and damaged masonry (section IV.1) and the second one is related to the mechanical behaviour of the strengthened masonry specimens subject to out of plane bending combined with axial force (section IV.2). In the Chapter V some bond models to prevent the debonding at the FRP plate end are checked. It is confirmed that their predictions are so different. A pure-shear test database is compiled with results from the existing literature and others from the experimental program described in section IV.1. This database lets know which of the considered model is more suitable to design anchorage lengths of glued FRP to masonry. In the Chapter VI a method to check unreinforced masonry sections with external FRP strengthening subject to bending and compression to the ultimate limit state is proposed. This method is based on concrete reinforced one, but it is adapted to strengthened masonry. A bilinear constitutive law is used for masonry (according to CTE DB SE-F). Its simplicity helps to develop the model formulation and it has proven to be suitable to predict bending capacity either for FRP failures or masonry crushing. With regard to FRP, the design strain is limited. It is taken into account different aspects which cause the plate can’t reach its ultimate strength, like intermediate FRP debonding induced by opening cracking or environmental damage. A “bond factor” is proposed. It is obtained by means of an experimental bending test database that includes 68 results from the existing literature and from the experimental program described in section IV.2. The proposed formulation has also been checked with the help of bending database. The effects of the main parameters, like axial load, FRP design effective strain or FRP stiffness, on the bending capacity of the strengthened element are studied in Chapter VII. Finally, the main conclusions from the work carried out are summarized in Chapter VIII. Future lines of research to be explored are suggested as well.

Impact of N2 plasma power discharge on AlGaN/GaN HEMT performance

The effects of power and time conditions of in situ N2 plasma treatment, prior to silicon nitride (SiN) passivation, were investigated on an AlGaN/GaN high-electron mobility transistor (HEMT). These studies reveal that N2 plasma power is a critical parameter to control the SiN/AlGaN interface quality, which directly affects the 2-D electron gas density. Significant enhancement in the HEMT characteristics was observed by using a low power N2 plasma pretreatment. In contrast, a marked gradual reduction in the maximum drain-source current density (IDS max) and maximum transconductance (gm max), as well as in fT and fmax, was observed as the N2 plasma power increases (up to 40% decrease for 210 W). Different mechanisms were proposed to be dominant as a function of the discharge power range. A good correlation was observed between the device electrical characteristics and the surface assessment by atomic force microscopy and Kelvin force microscopy techniques.

Properties and applications of high electron density structures based on InN and related compounds

El objetivo principal del presente trabajo es estudiar y explotar estructuras que presentan un gas bidimensional de electrones (2DEG) basadas en compuestos nitruros con alto contenido de indio. Existen muchas preguntas abiertas, relacionadas con el nitruro de indio y sus aleaciones, algunas de las cuales se han abordado en este estudio. En particular, se han investigado temas relacionados con el análisis y la tecnología del material, tanto para el InN y heteroestructuras de InAl(Ga)N/GaN como para sus aplicaciones a dispositivos avanzados. Después de un análisis de la dependencia de las propiedades del InN con respecto a tratamientos de procesado de dispositivos (plasma y térmicos), el problema relacionado con la formación de un contacto rectificador es considerado. Concretamente, su dificultad es debida a la presencia de acumulación de electrones superficiales en la forma de un gas bidimensional de electrones, debido al pinning del nivel de Fermi. El uso de métodos electroquímicos, comparados con técnicas propias de la microelectrónica, ha ayudado para la realización de esta tarea. En particular, se ha conseguido lamodulación de la acumulación de electrones con éxito. En heteroestructuras como InAl(Ga)N/GaN, el gas bidimensional está presente en la intercara entre GaN y InAl(Ga)N, aunque no haya polarización externa (estructuras modo on). La tecnología relacionada con la fabricación de transistores de alta movilidad en modo off (E-mode) es investigada. Se utiliza un método de ataque húmedo mediante una solución de contenido alcalino, estudiando las modificaciones estructurales que sufre la barrera. En este sentido, la necesidad de un control preciso sobre el material atacado es fundamental para obtener una estructura recessed para aplicaciones a transistores, con densidad de defectos e inhomogeneidad mínimos. La dependencia de la velocidad de ataque de las propiedades de las muestras antes del tratamiento es observada y comentada. Se presentan también investigaciones relacionadas con las propiedades básicas del InN. Gracias al uso de una puerta a través de un electrolito, el desplazamiento de los picos obtenidos por espectroscopia Raman es correlacionado con una variación de la densidad de electrones superficiales. En lo que concierne la aplicación a dispositivos, debido al estado de la tecnología actual y a la calidad del material InN, todavía no apto para dispositivos, la tesis se enfoca a la aplicación de heteroestructuras de InAl(Ga)N/GaN. Gracias a las ventajas de una barrera muy fina, comparada con la tecnología de AlGaN/GaN, el uso de esta estructura es adecuado para aplicaciones que requieren una elevada sensibilidad, estando el canal 2DEG más cerca de la superficie. De hecho, la sensibilidad obtenida en sensores de pH es comparable al estado del arte en términos de variaciones de potencial superficial, y, debido al poco espesor de la barrera, la variación de la corriente con el pH puede ser medida sin necesidad de un electrodo de referencia externo. Además, estructuras fotoconductivas basadas en un gas bidimensional presentan alta ganancia debida al elevado campo eléctrico en la intercara, que induce una elevada fuerza de separación entre hueco y electrón generados por absorción de luz. El uso de metalizaciones de tipo Schottky (fotodiodos Schottky y metal-semiconductormetal) reduce la corriente de oscuridad, en comparación con los fotoconductores. Además, la barrera delgada aumenta la eficiencia de extracción de los portadores. En consecuencia, se obtiene ganancia en todos los dispositivos analizados basados en heteroestructuras de InAl(Ga)N/GaN. Aunque presentando fotoconductividad persistente (PPC), los dispositivos resultan más rápidos con respeto a los valores que se dan en la literatura acerca de PPC en sistemas fotoconductivos. ABSTRACT The main objective of the present work is to study and exploit the two-dimensionalelectron- gas (2DEG) structures based on In-related nitride compounds. Many open questions are analyzed. In particular, technology and material-related topics are the focus of interest regarding both InNmaterial and InAl(Ga)N/GaNheterostructures (HSs) as well as their application to advanced devices. After the analysis of the dependence of InN properties on processing treatments (plasma-based and thermal), the problemof electrical blocking behaviour is taken into consideration. In particular its difficulty is due to the presence of a surface electron accumulation (SEA) in the form of a 2DEG, due to Fermi level pinning. The use of electrochemical methods, compared to standard microelectronic techniques, helped in the successful realization of this task. In particular, reversible modulation of SEA is accomplished. In heterostructures such as InAl(Ga)N/GaN, the 2DEGis present at the interface between GaN and InAl(Ga)N even without an external bias (normally-on structures). The technology related to the fabrication of normally off (E-mode) high-electron-mobility transistors (HEMTs) is investigated in heterostructures. An alkali-based wet-etching method is analysed, standing out the structural modifications the barrier underwent. The need of a precise control of the etched material is crucial, in this sense, to obtain a recessed structure for HEMT application with the lowest defect density and inhomogeneity. The dependence of the etch rate on the as-grown properties is observed and commented. Fundamental investigation related to InNis presented, related to the physics of this degeneratematerial. With the help of electrolyte gating (EG), the shift in Raman peaks is correlated to a variation in surface eletron density. As far as the application to device is concerned, due to the actual state of the technology and material quality of InN, not suitable for working devices yet, the focus is directed to the applications of InAl(Ga)N/GaN HSs. Due to the advantages of a very thin barrier layer, compared to standard AlGaN/GaN technology, the use of this structure is suitable for high sensitivity applications being the 2DEG channel closer to the surface. In fact, pH sensitivity obtained is comparable to the state-of-the-art in terms of surface potential variations, and, due to the ultrathin barrier, the current variation with pH can be recorded with no need of the external reference electrode. Moreover, 2DEG photoconductive structures present a high photoconductive gain duemostly to the high electric field at the interface,and hence a high separation strength of photogenerated electron and hole. The use of Schottky metallizations (Schottky photodiode and metal-semiconductor-metal) reduce the dark current, compared to photoconduction, and the thin barrier helps to increase the extraction efficiency. Gain is obtained in all the device structures investigated. The devices, even if they present persistent photoconductivity (PPC), resulted faster than the standard PPC related decay values.

Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures

The quaternary nitride-based high electron mobility transistor (HEMT) has been recently a focus of interest because of the possibility to grow lattice-matched barrier to GaN and tune the barrier bandgap at the same time.

Investigation of AlInN barrier ISFET structures with GaN capping for pH detection

In the last decade the interest in nitride-based sensors (gas, ions...) and bio-sensors is increased. In the case of ion sensitive FET (ISFET), gate voltages induced by ions adsorbed onto the gate region modulate the source-drain currents.

Lugares intermedios en Accesibilidad: Metodología integrada de diagnóstico y solución de barreras de accesibilidad físitica y criterios de comprensión e identificación a todas las escalas del Patrimonio

El presente artículo se centra en la aportación del Grupo de Investigación Paisaje Cultural (GIPC/UPM) en el proyecto de investigación PATRAC Patrimonio Accesible: I+D+i para una cultura sin barreras. En el marco de dos subproyectos, se ha trabajado, respectivamente, en el desarrollo de una metodología integrada de identificación y solución de barreras de accesibilidad física a todas las escalas del patrimonio, y en la selección, adaptación y gestión de la información de apoyo a la comprensión del bien patrimonial. El desarrollo se basa en una postura teórica previa: la importancia de la continuidad entre las escalas en la accesibilidad al patrimonio, y la especificidad de la relación entre el individuo y el elemento o entorno patrimonial. Las conclusiones recogen los conceptos que singularizan la aportación del GIPC. Así, se destaca el trabajo en aquellos espacios intermedios que conectan las diferentes escalas a las que se apunta, la calidad del diseño como medio de aplicación de criterios universales para soluciones específicas y la importancia, en la relación entre el hombre y el patrimonio, de la orientación y la identificación. This paper is focused in the contribution of the Grupo de investigación de Paisaje Cultural (GIPC/UPM) (Research Group on Cultural Landscapes) to the PATRACT project. In this framework it has been designed an integrated methodology to identify and solve physical barriers in all the scales of heritage; and in the selection, management and adaptation of information to improve the understanding the importance of heritage. This contribution is supported in a starting theory premise: the importance of continuity in the scales of accessibility to heritage, and the specificity of the relationship between the individual with the element or heritage environment. In the conclusions the GIPC group has strengthened the importance of the intermediate spaces which interlink different scales, using the quality of the design to accomplish specific solutions, and the relation between the human being and heritage as a pivotal point in the orientation and identification processes.

Electronic structure of copper nitrides as a function of nitrogen content

he nitrogen content dependence of the electronic properties for copper nitride thin films with an atomic percentage of nitrogen ranging from 26 ± 2 to 33 ± 2 have been studied by means of optical (spectroscopic ellipsometry), thermoelectric (Seebeck), and electrical resistivity measurements. The optical spectra are consistent with direct optical transitions corresponding to the stoichiometric semiconductor Cu3N plus a free-carrier contribution, essentially independent of temperature, which can be tuned in accordance with the N-excess. Deviation of the N content from stoichiometry drives to significant decreases from − 5 to − 50 μV/K in the Seebeck coefficient and to large enhancements, from 10− 3 up to 10 Ω cm, in the electrical resistivity. Band structure and density of states calculations have been carried out on the basis of the density functional theory to account for the experimental results.