Impact of N2 plasma power discharge on AlGaN/GaN HEMT performance


Autoria(s): Romero Rojo, Fátima; Jiménez Martín, Ana; González Posadas, Vicente; Martin Horcajo, Sara; Calle Gómez, Fernando; Muñoz Merino, Elias
Data(s)

01/02/2012

Resumo

The effects of power and time conditions of in situ N2 plasma treatment, prior to silicon nitride (SiN) passivation, were investigated on an AlGaN/GaN high-electron mobility transistor (HEMT). These studies reveal that N2 plasma power is a critical parameter to control the SiN/AlGaN interface quality, which directly affects the 2-D electron gas density. Significant enhancement in the HEMT characteristics was observed by using a low power N2 plasma pretreatment. In contrast, a marked gradual reduction in the maximum drain-source current density (IDS max) and maximum transconductance (gm max), as well as in fT and fmax, was observed as the N2 plasma power increases (up to 40% decrease for 210 W). Different mechanisms were proposed to be dominant as a function of the discharge power range. A good correlation was observed between the device electrical characteristics and the surface assessment by atomic force microscopy and Kelvin force microscopy techniques.

Formato

application/pdf

Identificador

http://oa.upm.es/22669/

Idioma(s)

eng

Relação

http://oa.upm.es/22669/1/INVE_MEM_2012_153149.pdf

http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6109338

info:eu-repo/semantics/altIdentifier/doi/10.1109/TED.2011.2176947

Direitos

http://creativecommons.org/licenses/by-nc-nd/3.0/es/

info:eu-repo/semantics/openAccess

Fonte

IEEE Transactions on Electron Devices, ISSN 0018-9383, 2012-02, Vol. 59, No. 2

Palavras-Chave #Telecomunicaciones
Tipo

info:eu-repo/semantics/article

Artículo

PeerReviewed