Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
| Data(s) |
2012
|
|---|---|
| Resumo |
The quaternary nitride-based high electron mobility transistor (HEMT) has been recently a focus of interest because of the possibility to grow lattice-matched barrier to GaN and tune the barrier bandgap at the same time. |
| Formato |
application/pdf |
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
E.T.S.I. Telecomunicación (UPM) |
| Relação |
http://oa.upm.es/22887/1/INVE_MEM_2012_153316.pdf info:eu-repo/semantics/altIdentifier/doi/null |
| Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
| Fonte |
International Workshop on Nitride Semiconductors (IWN2012) | International Workshop on Nitride Semiconductors (IWN2012) | 14/10/2012 - 19/10/2012 | Sapporo, Japan |
| Palavras-Chave | #Electrónica |
| Tipo |
info:eu-repo/semantics/conferenceObject Ponencia en Congreso o Jornada PeerReviewed |
