Fabrication of GaN nanorods by focused ion beam


Autoria(s): Martinez Rodrigo, Javier; Barbagini, Francesca; Bengoechea Encabo, Ana; Albert, Steven; Sánchez García, Miguel Angel; Calleja Pardo, Enrique
Data(s)

01/10/2012

Resumo

Ordered arrays of III-Nitride nanocolumns are excellent candidates for the fabrication of nano-optoelectronic devices. Different technologies such as e-beam lithography or colloidal lithography, have been used to obtain ordered arrays. All these technologies have in common several processing steps that can affect the crystalline growth of the nanocolumns. In this work, we present a single lithographic step that permits to grow ordered GaN nanocolumns with different geometries. The patterning is based in the use of a focused ion beam with different doses. With this method has been possible to create GaN nanopillars and nanocylinders.

Formato

application/pdf

Identificador

http://oa.upm.es/16342/

Idioma(s)

eng

Relação

http://oa.upm.es/16342/1/INVE_MEM_2012_133304.pdf

http://www.sciencedirect.com/science/article/pii/S0167931712002870

info:eu-repo/semantics/altIdentifier/doi/10.1016/j.mee.2012.07.006

Direitos

http://creativecommons.org/licenses/by-nc-nd/3.0/es/

info:eu-repo/semantics/openAccess

Fonte

Microelectronic Engineering, ISSN 0167-9317, 2012-10, Vol. 98

Palavras-Chave #Telecomunicaciones #Electrónica #Física
Tipo

info:eu-repo/semantics/article

Artículo

PeerReviewed