Fabrication of GaN nanorods by focused ion beam
Data(s) |
01/10/2012
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Resumo |
Ordered arrays of III-Nitride nanocolumns are excellent candidates for the fabrication of nano-optoelectronic devices. Different technologies such as e-beam lithography or colloidal lithography, have been used to obtain ordered arrays. All these technologies have in common several processing steps that can affect the crystalline growth of the nanocolumns. In this work, we present a single lithographic step that permits to grow ordered GaN nanocolumns with different geometries. The patterning is based in the use of a focused ion beam with different doses. With this method has been possible to create GaN nanopillars and nanocylinders. |
Formato |
application/pdf |
Identificador | |
Idioma(s) |
eng |
Relação |
http://oa.upm.es/16342/1/INVE_MEM_2012_133304.pdf http://www.sciencedirect.com/science/article/pii/S0167931712002870 info:eu-repo/semantics/altIdentifier/doi/10.1016/j.mee.2012.07.006 |
Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
Fonte |
Microelectronic Engineering, ISSN 0167-9317, 2012-10, Vol. 98 |
Palavras-Chave | #Telecomunicaciones #Electrónica #Física |
Tipo |
info:eu-repo/semantics/article Artículo PeerReviewed |