Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
| Data(s) |
2012
|
|---|---|
| Resumo |
In the last decade the interest in nitride-based sensors (gas, ions...) and bio-sensors is increased. In the case of ion sensitive FET (ISFET), gate voltages induced by ions adsorbed onto the gate region modulate the source-drain currents. |
| Formato |
application/pdf |
| Identificador | |
| Idioma(s) |
eng |
| Relação |
http://oa.upm.es/22896/1/INVE_MEM_2012_153162.pdf info:eu-repo/semantics/altIdentifier/doi/null |
| Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
| Fonte |
International Workshop on Nitride Semiconductors (IWN2012) | International Workshop on Nitride Semiconductors (IWN2012) | 14/10/2012 - 19/10/2012 | Sapporo, Japan |
| Palavras-Chave | #Electrónica |
| Tipo |
info:eu-repo/semantics/conferenceObject Ponencia en Congreso o Jornada PeerReviewed |
