120keV的N~+注入SiC薄膜的光谱特性研究

文中主要研究了 12 0keV的N+ 注入后SiC薄膜样品的光致发光谱 (PL)和傅立叶红外光谱(FTIR)特性 .从红外光谱可以看到有明显得碳氮单键、双键、三键等新结构生成 .从PL光谱则发现 36 5nm处的发光峰明显增强 ,这表明N+ 注入使得带隙中深的能级辐射中心复合的效率大幅度提高

Study on nanohardness of helium-implanted 4H-SiC

The hardness of 4H-SiC, which was high-temperature (500 K) helium-Implanted to fluences of 3 x 10(16) Ions cm(-2) and subsequently thermally annealed at the temperature ranging from 773 to 1273 K, was studied by nanoindentation It is found that the hardness of the implanted 4H-SiC increases at the first, then decreases, and then increases again with increasing annealing tempeature in the temperature range of 500-1273 K, and significant increase in hardness is observed at 773 K. The behavior is ascribed to the changes of the density, length, and tangling of the covalent Si-C bond through the recombination of point defects, clustering of He-vacancy, and growth of helium bubbles during the thermal annealing

氦离子注入4H-SiC晶体的纳米硬度研究；Study on nanohardness of helium-implanted 4H-SiC

4H-SiC晶体经能量为100keV,剂量为3×1016cm-2的氦离子高温(500K)注入后,再在773—1273K温度范围内进行了退火处理,最后使用纳米压痕仪测量了样品注入面的硬度.测试结果表明,在500—1273K温度范围内样品的硬度随退火温度升高呈现先增大后减小再增大的趋势,其中773K退火样品的硬度增大明显.分析认为,退火样品的硬度变化是由退火过程中缺陷复合与氦泡生长导致样品内部的Si—C键密度、键长和键角改变引起的.

Structural and optical properties of 6H-SiC helium-implanted at 600 K

Single crystals of 6H-SiC were implanted at 600 K with 100 key He ions to three successively fluences and subsequently annealed at different temperatures ranging from 873 to 1473 K in vacuum. The recovery of lattice damage was investigated by different techniques including Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy and Fourier transform infrared spectroscopy. All three techniques showed that the damage induced by helium ion implantation in the lattice is closely related to the fluence. Rutherford backscattering spectrometry/channeling data on high temperature implantations suggest that for a fluence of 3 x 10(16) He+/cm(2), extended defects are created by thermal annealing to 1473 K. Apart from a well-known intensity decrease of scattering peaks in Raman spectroscopy it was found that the absorbance peak in Fourier transform infrared spectroscopy due to the stretching vibration of Si-C bond shifted to smaller wave numbers with increasing fluence, shifting back to larger wave numbers with increasing annealing temperature. These phenomena are attributed to different lattice damage behavior induced by the hot implantation process, in which simultaneous recovery was prevailing. (C) 2010 Elsevier B.V. All rights reserved.

Effect of substrate and annealing on the structural and optical properties of ZnO:Al films

ZnO:Al thin films with c-axis preferred orientation were deposited on glass and Si substrates using RF magnetron sputtering technique. The effect of substrate on the structural and optical properties of ZnO:Al films were investigated. The results showed a strong blue peak from glass-substrate ZnO:Al film whose intensity became weak when deposited on Si substrate. However, the full width at half maxima (FWHM) of the Si-substrate ZnO:Al (0 0 2) peaks decreased evidently and the grain size increased. Finally, we discussed the influence of annealing temperature on the structural and optical properties of Si-substrate ZnO:Al films. After annealing, the crystal quality of Si-substrate ZnO:Al thin films was markedly improved and the intensity of blue peak (similar to 445 nm) increased noticeably. This observation may indicate that the visible emission properties of the ZnO:Al films are dependent more on the film crystallinity than on the film stoichiometry. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.

A solid-state dye-sensitized solar cell based on a novel ionic liquid gel and ZnO nanoparticles on a flexible polymer substrate

This paper describes a new strategy to make a full solid-state, flexible, dye-sensitized solar cell (DSSC) based on novel ionic liquid gel, organic dye, ZnO nanoparticles and carbon nanotube (CNT) thin film stamped onto a polyethylene terephthalate (PET) substrate. The CNTs serve both as the charge collector and as scaffolds for the growth of ZnO nanoparticles, where the black dye molecules are anchored.

Selective, peroxidase substrate based "signal-on" colorimetric assay for the detection of chromium (VI)

Due to the potentially adverse effects of the chromium (VI) on the human health and also on the environment, the quantitative determination of Cr(VI) is of particular interest. This work herein reports a facile, selective and rapid colorimetric determination of Cr(VI) based on the peroxidase substrate-2,2'-azino-bis(3-ethylbenzo-thiazoline-6-sulfonic acid) diammonium salt (ABTS) as the color developing agent. ABTS, which was usually acted as peroxidase substrate for the enzyme linked immunosorbent assay, is used here for the first time to fabricate the "signal-on" colorimetric Assay for Cr(VI).

Low-threshold conjugated polymer distributed feedback lasers on InP substrate

We demonstrate a low threshold polymer solid state thin-film distributed feedback (DFB) laser on an InP substrate with the DFB structure. The used gain medium is conjugated polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylenevinylene] (MEH-PPV) doped polystyrene (PS) and formed by drop-coating method. The second order Bragg scattering region on the InP substrate gave rise to strong feedback, thus a lasing emission at 638.9nm with a line width of 1.2nm is realized when pumped by a 532nm frequency-doubled Nd: YAG pulsed laser. The devices show a laser threshold as low as 7 nJ/pulse.

Ultrathin-film growth of para-sexiphenyl (I): Submonolayer thin-film growth as a function of the substrate temperature

The para-sexiphenyl (p-6P) monolayer film induces weak epitaxy growth (WEG) of disk-like organic semiconductors, and their charge mobilities are increased dramatically to the level of the corresponding single crystals [Wang et al., Adv. Mater. 2007, 19, 2168]. The growth behavior and morphology of p-6P monolayer film play decisive roles on WEG. Here, we investigated the growth behavior of p-6P submonolayer film as a function of the substrate temperature. Its growth exhibited two different mechanisms at high and low substrate temperature.

Self-assembly of lambda-DNA networks/Ag nanoparticles: Hybrid architecture and active-SERS substrate

In this article, highly rough and stable surface enhanced Raman scattering (SERS)-active substrates had been fabricated by a facile layer by-layer technique. Unique lambda-DNA networks and CTAB capped silver nanoparticles (AgNP) were alternatively self-assembled on the charged mica surface until a desirable number of bilayers were reached. The as-prepared hybrid architectures were characterized by UV-vis spectroscopy, tapping mode atomic force microscopy (AFM) and confocal Raman microscopy, respectively.

Perfectly Hydrophobic Silicone Nanofiber Coatings: Preparation from Methyltrialkoxysilanes and Use as Water-Collecting Substrate

Perfectly hydrophobic (PHO) coatings consisting of silicone nanofibers have been obtained via a solution process using methyltrialkoxysilanes as precursors. On the basis of thermal gravimetry and differential thermal analysis (TG-DTA) and Fourier transform infrared spectroscopy (FTIR) results, the formula of the nanofibers was tentatively given and a possible growth mechanism of the nanofibers was proposed. Because of the low affinity between the coatings and the small water droplet, when using these coatings as substrate for collecting water vapor, the harvesting efficiency could be enhanced as compared with those from bare glass substrate for more than 50% under 25 degrees C and 60-90% relative humidity. By removing the surface methyl group by heat treatment or ultraviolet (UV) irradiation, the as-prepared perfectly hydrophobic surface can be converted into a superhydrophilic surface.