稀磁半导体(Ga,Mn)As和铁磁金属-半导体异质结Fe/GaAs铁磁相变过程的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaAs 基半导体中自旋动力学的实验研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

1.3-1.55 微米 GaInNAs(Sb)/GaAs 量子阱生长与激光器制备研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaAs/AlGaAs量子线的研究及在场效应弱光探测器中的应用

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

长波长InAs/GaAs量子点的MOCVD生长及激光器制作

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

微波对GaAs 基半导体自旋相关过程的影响

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

InGaAs/GaAs链状量子点的光学性质研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaAs/InP 键合技术研究及其太阳电池应用

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-07T01:06:41Z No. of bitstreams: 1 晏磊--GaAs-InP键合技术研究及其太阳电池应用.pdf: 1948545 bytes, checksum: f2c55a092591dfa48fe9063fb432559f (MD5)

GaAs 基1.55 微米异变InGaAs高性能探测器的研究

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-07T06:25:37Z No. of bitstreams: 1 朱彬：异变1.55微米InGaAs高性能探测器的研究.pdf: 2216549 bytes, checksum: fa478c11726e2e9949d3ef39dfb34370 (MD5)

InAs/GaAs量子点的非线性光学效应研究

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-07T00:55:16Z No. of bitstreams: 1 黄霞毕业论文.pdf: 1340687 bytes, checksum: 4ebcdabf0de9d75eab12b618ed9d495a (MD5)

The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy

The third-order optical nonlinear refractive properties of InAs/GaAs quantum dots grown by molecular beam epitaxy have been measured using the reflection Z-scan technique at above-bandgap energy. The nonlinear refractive index and nonlinear absorption index of the InAs/GaAs quantum dots were determined for wavelengths from 740 to 777 nm. The measured results are compared with the nonlinear refractive response of several typical III-V group semiconductor materials. The corresponding mechanisms responsible for the large nonlinear response are discussed.

Compact Reconfigurable Binary-Decision-Diagram Logic Circuit on a GaAs Nanowire Network

We describe a reconfigurable binary-decision-diagram logic circuit based on Shannon's expansion of Boolean logic function and its graphical representation on a semiconductor nanowire network. The circuit is reconfigured by using programmable switches that electrically connect and disconnect a small number of branches. This circuit has a compact structure with a small number of devices compared with the conventional look-up table architecture. A variable Boolean logic circuit was fabricated on an etched GaAs nanowire network having hexagonal topology with Schottky wrap gates and SiN-based programmable switches, and its correct logic operation together with dynamic reconfiguration was demonstrated.

Fe/GaAs结构体系中自旋注入与探测的研究

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-21T05:28:49Z No. of bitstreams: 1 吴昊_Fe-GaAs结构体系中自旋注入与探测的研究.pdf: 6719940 bytes, checksum: e75d378a532a0ba454bd429b8b7b66b7 (MD5)