Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001)

Molecular beam epitaxy has been used for growing InGaAs self-assembled quantum dots (QDs) in InAlAs on an InP(001) substrate. Nominal deposition of 9.6 monolayers of In0.9Ga0.1As results in QDs of similar to 6.5 nm high with an areal density of 3.3 X 10(11) cm(-2). Conspicuous bimodal size distribution is identified, and is responsible for the observed QDs photoluminescence (PL) emission with two peaks at 0.627 and 0.657 eV. Good agreement is achieved between the observed PL peak energies and calculated results. (C) 1999 American Institute of Physics. [S00218979(99)00101-2].

Growth of GaSb and GaInAsSb layers for thermophotovolatic cells by liquid phase epitaxy - art. no. 68411E

GaSb based cells as receivers in thermophotovoltaic system have attracted great interest and been extensively studied in the recent 15 years. Although nowadays the manufacturing technologies have made a great progress, there are still some details need to make a further study. In this paper, undoped and doped GaSb layers were grown on n-GaSb (100) substrates from both Ga-rich and Sb-rich solutions using liquid phase epitaxy (LPE) technique. The nominal segregation coefficients k of intentional doped Zn were 1.4 and 8.8 determined from the two kinds of GaSb epitaxial layers. Additionally, compared with growing from Ga-rich solutions, the growing processes from Sb-rich solutions were much easier to control and the surface morphologies of epitaxial layers were smoother. Further-more, in order to broaden the absorbing edge, Ga1-xInxAsySb1-y quaternary alloys were grown on both GaSb and InAs substrates from In-rich solutions, under different temperature respectively.

Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As

We report the influence of growth parameters and post-growth annealing on the structural characterizations and magnetic properties of (Ga, Cr)As films. The crystalline quality and magnetic properties are sensitive to the growth conditions. The single-phase (Ga, Cr)As film with the Curie temperature of 10 K is synthesized at growth temperature T-s = 250 degrees C and with nominal Cr content x = 0.016. However, for the films with x > 0.02, the aggregation of Cr atoms is strongly enhanced as both T. and x increase, which not only brings strong compressive strain in the epilayer, but also roughens the surface. The origin of room-temperature ferromagnetism in (Ga, Cr)As films with nanoclusters is also discussed.

High resolution interrogation technique based on linear photodiode array spectrometer for fiber Bragg grating Sensors - art. no. 65952C

A linear photodiode array spectrometer based, high resolution interrogation technique for fiber Bragg grating sensors is demonstrated. Spline interpolation and Polynomial Approximation Algorithm (PAA) are applied to the data points acquired by the spectrometer to improve the original PAA based interrogation method. Thereby fewer pixels are required to achieve the same resolution as original. Theoretical analysis indicates that if the FWHM of a FBG covers more than 3 pixels, the resolution of central wavelength shift will arrive at less than 1 pm. While the number of pixels increases to 6, the nominal resolution will decrease to 0.001 pm. Experimental result shows that Bragg wavelength resolution of similar to 1 pm is obtained for a FBG with FWHM of similar to 0.2 nm using a spectrometer with a pixel resolution of similar to 70 pm.

纳米流体中HFC134a水合物的生成过程

提出制冷剂气体水合物在纳米流体中快速生成的设想，通过HFC134a气体水合物在纳米铜流体（由0．04％的十二烷基苯磺酸钠（SDBS）水溶液和名义直径为25nm的纳米铜粒子组成）中的生成实验验证了此设想．实验结果表明，与去离子水中HFC134a气体水合物的生成过程相比，纳米铜流体中SDBS是造成HFC134a气体水合物诱导时问明显缩短的主要原因，而纳米铜粒子对诱导时间的影响不大；纳米铜流体中SDBS的乳化作用和纳米铜粒子大比表面积大大促进了HFC134a在水中的溶解；纳米铜粒子的加入明显加强了HFC134a气体水合物生成过程中的传热传质，随着纳米铜粒子数的增加，HFC134a气体水合物生成过程明显缩短．

ESTIMATION OF THE STRAIN STATE OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES BY DOUBLE-CRYSTAL X-RAY-DIFFRACTION

20-period strained-layer superlattices of nominal composition and width Ge0.2Si0.8 (5 nm)/Si(25 nm) and Ge0.5Si0.5 (5 nm)/Si(25 nm) were studied by double-crystal X-ray diffraction. The Ge content x was determined by computer simulation of the diffraction features from the superlattice. This method is shown to be independent of the relaxation of the superlattice. Alternatively, x can be obtained from the measured difference DELTAa/a in lattice spacing perpendicular to the growth plane. It is sensitive to the relaxation. Comparing the results obtained in these two different ways, information about the relaxation of the superlattices can be obtained.

KINEMATICAL STUDY OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE BY A DOUBLE CRYSTAL X-RAY-DIFFRACTION METHOD

Two samples of nominal 20-period Ge0.20Si0.80(5 nm)/Si(25 nm) and Ge0.5Si0.5(5 nm)/Si(25 nm) strained-layer superlattices (SLSs) were studied by the double-crystal X-ray diffraction method. It is convenient to define the perpendicular strains relative to the average crystal. Computer simulations of the rocking curves were performed using a kinematical step model. An excellent agreement between the measured and simulated satellite patterns is achieved. The dependence of the sensitivity of the rocking curves to the structural parameters of the SLS, such as the alloying concentration x and the layer thicknesses and the L component of the reflection g = (HKL), are clearly demonstrated.

Identified particle production, azimuthal anisotropy, and interferometry measurements in Au plus Au collisions at root s(NN)=9.2 GeV

We present the first measurements of identified hadron production, azimuthal anisotropy, and pion interferometry from Au + Au collisions below the nominal injection energy at the BNL Relativistic Heavy-Ion Collider (RHIC) facility. The data were collected using the large acceptance solenoidal tracker at RHIC (STAR) detector at root s(NN) = 9.2 GeV from a test run of the collider in the year 2008. Midrapidity results on multiplicity density dN/dy in rapidity y, average transverse momentum < p(T)>, particle ratios, elliptic flow, and Hanbury-Brown-Twiss (HBT) radii are consistent with the corresponding results at similar root s(NN) from fixed-target experiments. Directed flow measurements are presented for both midrapidity and forward-rapidity regions. Furthermore the collision centrality dependence of identified particle dN/dy, < p(T)>, and particle ratios are discussed. These results also demonstrate that the capabilities of the STAR detector, although optimized for root s(NN) = 200 GeV, are suitable for the proposed QCD critical-point search and exploration of the QCD phase diagram at RHIC.

EFFECT OF V, NB, AND TA DOPING ON THE 2223 PHASE-FORMATION AND THE CRYSTAL-STRUCTURE IN THE BISRCACUO SYSTEM

X-ray diffraction and electrical and diamagnetic analyses revealed that the 2223 phase was significantly enhanced by high-valence cation (V5+, Nb5+, Ta5+, etc.) doping in BiSrCaCuO samples. The optimum nominal composition was Bi1.6M0.4Sr2Ca2Cu3 O(y)(M =

EFFECT OF CODOPING SB AND V TO THE BIPBSRCACUO SYSTEM

With XRD, R- T curves, and a.c chi measurements, the doping and codoping effects of Sb and V to a Cu-deficient Pb-doped Bi system have been studied. A sample singly doped with V possesses a T(c) about 2 K lower than that of a sample singly doped with Sb. This is attributed to the different sites of their substitution. It was observed that for promoting 2223 phase formation, Sb and V works cooperatively, and the codoping of Sb may enhance the 2223 phase formed. With a low doping level of Sb, the optimum doping amount of V is 0.3, i.e., with a nominal composition of Bi1.5Pb0.3Sb0.06Sr2Ca2Cu2.4V0.3Oy. A sample in which the 2223 phase is the dominant phase and which has a zero resistance transition temperature of 105 K has been obtained.

ANALYSIS OF A NEW SUPERCONDUCTING PHASE IN THE BISRCACUO SYSTEM

By doping Sb, Ba and In to the Bi-system and with the variation of nominal atomic ratio of Cu, Sr and Ca, a new possible phase is found with T(c) almost-equal-to 105 K, but with a structure of 2212 phase. Effects of post-sintering treatment from air-quenched to O2-annealed were investigated for the approximately 105 K new phase.

原子力显微镜管式扫描器运动学建模与误差分析

针对样本扫描模式原子力显微镜,对其管式扫描器-样本-探针系统进行了运动学分析,建立了该系统的运动学模型,该模型表明:对于给定原子力显微镜扫描器,样本上与探针接触点的横向和纵向位移取决于探针尖端相对于扫描管轴心的偏置量、所加电压(或名义扫描范围)及样本厚度。据此模型,对由于弯曲运动模式所产生的两种重要误差—交叉耦合误差及扫描范围误差进行了定量分析,分析表明:扫描范围误差主要受样本厚度及名义扫描范围影响,而Z向交叉耦合误差主要受探针偏置量及名义扫描范围影响,实验验证了所建立的运动学模型和误差计算公式的正确性;另外,还提出了相应的减小误差的方法。

基于模型扰动抑制的直线伺服系统设计

针对高精度、微进给永磁直线交流同步电机 (PMLSM )驱动系统 ,采用基于模型的扰动抑制 (MBDA)方法 ,对诸如摩擦力、切削力、负载变动之类的扰动进行抑制。MBDA是利用一个与系统并行的标称模型 ,通过输出反馈 ,将系统输出与标称模型输出进行比较 ,得出误差信号 ,并通过设计一个补偿器将误差信号反馈给被控对象的输入端 ,从而实现扰动抑制。同时 ,针对速度环设计了积分 -比例 (IP)控制器 ,以满足系统快速跟踪指令的要求 ,并且其具有较强的抗扰动能力。仿真结果表明 ,该控制方法响应速度快 ,抗干扰能力强

从第四轮“关于科研单位的组织与业绩的国际比较研究”（ICSOPRU）看满意度对科研单位业绩的影响

What role satisfaction plays in the factors contributing to performance continues to be a major area of interest in the study of industrial and organization psychology, but there is a lack of quantative study dealing with this question in research units. The author has a try in this paper to answer this question using the data from China, Ghana, Hungary and Mexico of the Fourth Round International Comparative Study on the Organization and Performance of Research Units (ICSOPRU). The data-analysis include the principle component factor analysis of the performance and the satisfaction items in the Fourth Round ICSOPRU Questionnaires, and the multiple classification analysis, the multivariate nominal analysis of the performance and the satisfaction factors. The main findings show that a certain facet of the satisfaction explains the largest proportion of variances of a certain dimention of the performance and has a higher relative importance in contributing to the understanding of the performance. There also a comparison between the results from the four countries and that from China.

Control of Vibration in Mechanical Systems Using Shaped Reference Inputs

Dynamic systems which undergo rapid motion can excite natural frequencies that lead to residual vibration at the end of motion. This work presents a method to shape force profiles that reduce excitation energy at the natural frequencies in order to reduce residual vibration for fast moves. Such profiles are developed using a ramped sinusoid function and its harmonics, choosing coefficients to reduce spectral energy at the natural frequencies of the system. To improve robustness with respect to parameter uncertainty, spectral energy is reduced for a range of frequencies surrounding the nominal natural frequency. An additional set of versine profiles are also constructed to permit motion at constant speed for velocity-limited systems. These shaped force profiles are incorporated into a simple closed-loop system with position and velocity feedback. The force input is doubly integrated to generate a shaped position reference for the controller to follow. This control scheme is evaluated on the MIT Cartesian Robot. The shaped inputs generate motions with minimum residual vibration when actuator saturation is avoided. Feedback control compensates for the effect of friction Using only a knowledge of the natural frequencies of the system to shape the force inputs, vibration can also be attenuated in modes which vibrate in directions other than the motion direction. When moving several axes, the use of shaped inputs allows minimum residual vibration even when the natural frequencies are dynamically changing by a limited amount.