KINEMATICAL STUDY OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE BY A DOUBLE CRYSTAL X-RAY-DIFFRACTION METHOD


Autoria(s): DUAN XF; WANG YT; SHENG C; OUYANG JT
Data(s)

1993

Resumo

Two samples of nominal 20-period Ge0.20Si0.80(5 nm)/Si(25 nm) and Ge0.5Si0.5(5 nm)/Si(25 nm) strained-layer superlattices (SLSs) were studied by the double-crystal X-ray diffraction method. It is convenient to define the perpendicular strains relative to the average crystal. Computer simulations of the rocking curves were performed using a kinematical step model. An excellent agreement between the measured and simulated satellite patterns is achieved. The dependence of the sensitivity of the rocking curves to the structural parameters of the SLS, such as the alloying concentration x and the layer thicknesses and the L component of the reflection g = (HKL), are clearly demonstrated.

Identificador

http://ir.semi.ac.cn/handle/172111/14115

http://www.irgrid.ac.cn/handle/1471x/101092

Idioma(s)

英语

Fonte

DUAN XF; WANG YT; SHENG C; OUYANG JT.KINEMATICAL STUDY OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE BY A DOUBLE CRYSTAL X-RAY-DIFFRACTION METHOD,PHILOSOPHICAL MAGAZINE LETTERS,1993,67(1):1-7

Palavras-Chave #半导体材料 #BEAM ELECTRON-DIFFRACTION
Tipo

期刊论文