RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS/GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE

The lattice damage accumulation in GaAs and Al0.3Ga0.7As/GaAs superlattices by 1 MeV Si+ irradiation at room temperature and 350-degrees-C has been studied. For irradiations at 350-degrees-C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 x 10(15) Si/cm2 for GaAs, and is 5 x 10(15) Si/cm2 for Al0.8Ga0.7As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350-degrees-C. The damage accumulation rate for 1 MeV Si ion implantation in Al0.3Ga0.7As/GaAs superlattice is less than that in GaAs.

PROTON-IMPLANTED NEW TYPE SILICON MATERIAL SUBJECTED TO 2-STEP FURNACE ANNEALING

A high-resistivity defect layer buried beneath the silicon surface layer by using proton implantation and two-step conventional furnace annealing is described. During the first annealing step (600-degrees-C), implanted hydrogen atoms move towards the damage region and then coalesce into hydrogen gas bubbles at the residual defect layer. During the second annealing step (1180-degrees-C) these bubbles do not move due to their large volume. Structural defects are formed around the bubbles at a depth of approximately 0.5-mu-m. The defect layer results in a high resistivity value. Experiments show that the quality of the surface layer has been improved because the surface Hall mobility increased by 20%. The sample was investigated by transmission electron microscopy.

Damage removal and strain relaxation in As+-implanted Si0.57Ge0.43 epilayers grown by gas source molecular beam epitaxy

The damage removal and strain relaxation in the As+-implanted Si0.57Ge0.43 epilayers were studied by double-crystal x-ray diffractometry and transmission electron microscopy. The results presented in this paper indicate that rapid thermal annealing at temperatures higher than 950 degrees C results in complete removal of irradiation damage accompained by the formation of GeAs precipitates which enhance the removal process of dislocations.

Temperature-stimulated abnormal annealing of neutron-induced damage in high-resistivity silicon detectors

Neutron-irradiated high-resistivity silicon detectors have been subjected to elevated temperature annealing (ETA). It has been found that both detector full depletion voltage and leakage current exhibit abnormal annealing (or ''reverse annealing'') behaviour for highly irradiated detectors: increase with ETA. Laser induced current measurements indicate a net increase of acceptor type space charges associated with the full depletion voltage increase after ETA. Current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) data show that the dominant effect is the increase of a level at 0.39 eV below the conduction band (E(c) - 0.39 eV) or a level above the valence band (E(v) + 0.39 eV). Candidates tentatively identified for this level are the singly charged double vacancy (V-V-) level at E(c) - 0.39 eV, the carbon interstitial-oxygen interstitial (C-i-O-i) level at E(v) + 0.36 eV, and/or the tri-vacancy-oxygen center (V3O) at E(v) + 0.40 eV.

Passive mode locking of an Yb:YAB laser with a low modulation depth SESAM

A passive mode-locked diode-pumped self-frequency-doubling Yb:YAB laser with a low modulation depth semiconductor saturable absorber mirror operating at 374 MHz is demonstrated. The measured pulse duration is 1.98 ps at the wavelength of 1044 nm. The maximum average power reaches 45 mW.

Carrier Depth Profile of Si/SiGe/Si n-p-n HBTStructural Materials Characterized by Electrochemical Capacitance- Voltage Method

于2010-11-23批量导入

Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)

The annealing behavior of Si implanted with Ge and then BF2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 degrees C for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 degrees C for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 degrees C, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 degrees C for 60 minutes display two SiGe peaks, which may be related to the B concentration profiles.

Optimized sinusoidal phase mask to extend the depth of field of an incoherent imaging system

Wavefront coding is a powerful technique that can be used to extend the depth of field of an incoherent imaging system. By adding a suitable phase mask to the aperture plane, the optical transfer function of a conventional imaging system can be made defocus invariant. Since 1995, when a cubic phase mask was first suggested, many kinds of phase masks have been proposed to achieve the goal of depth extension. In this Letter, a phase mask based on sinusoidal function is designed to enrich the family of phase masks. Numerical evaluation demonstrates that the proposed mask is not only less sensitive to focus errors than cubic, exponential, and modified logarithmic masks are, but it also has a smaller point-spread-function shifting effect. (C) 2010 Optical Society of America

Cubic sinusoidal phase mask: Another choice to extend the depth of field of incoherent imaging system

Wave-front coding is a well known technique used to extend the depth of field of incoherent imaging system. The core of this technique lies in the design of suitable phase masks, among which the most important one is the cubic phase mask suggested by Dowski and Cathey (1995) [1]. In this paper, we propose a new type called cubic sinusoidal phase mask which is generated by combing the cubic one and another component having the sinusoidal form. Numerical evaluations and real experimental results demonstrate that the composite phase mask is superior to the original cubic phase mask with parameters optimized and provides another choice to achieve the goal of depth extension. (C) 2009 Elsevier Ltd. All rights reserved.