COMPOSITION DEPTH PROFILES OF OXIDIZED SILICON AND SPUTTERED GAAS FROM ANGLE-RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY
| Data(s) |
1988
|
|---|---|
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
BUSSING TD; HOLLOWAY PH; WANG YX; MOULDER JF; HAMMOND JS.COMPOSITION DEPTH PROFILES OF OXIDIZED SILICON AND SPUTTERED GAAS FROM ANGLE-RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY,JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,1988,6(5):1514-1518 |
| Palavras-Chave | #半导体材料 |
| Tipo |
期刊论文 |
