Will Antiangiogenic Agents be a Future for Mesothelioma Therapy?

Background: Malignant mesothelioma (MM) is an aggressive disease that is diagnosed mostly in locally advanced or metastatic stage. In this condition chemotherapy with the combination cisplatin and pemetrexed or ralitrexed represents the standard treatment as supported by a phase III study. However, chemotherapy has very limited effect on the improvement of survival of patients and very few of the MM patients survive more than 2 years. A better understanding of molecular mechanisms and pathways involved in angiogenesis in MM is the basis for the development of new drugs targeted against these pathways responsible for the proliferation and survival of tumor cells.

The Essential Role of Human Databases for Learning in and Validation of Affectively Competent Agents.

This output is an invited and refereed chapter in the second of the two book length outputs resulting from the EU HUMAINE grant and follow-on grants. The book is in the OUP Affective Science Series and is intended to provide a theoretically oriented state of the art model for those working in the area of affective computing. Each chapter provides a synthesis of a specific area and presents new data/findings/approaches developed by the author(s) which take the area further. This chapter is in the section on ‘Approaches to developing expression corpora and databases.’ The chapter provides a critical synthesis of the issues involved in databases for affective computing and introduces the SEMAINE SAL Database, developed as an integral part of the EU SEMAINE Project (The Sensitive Agent Project 2008-2011) which is an interdisciplinary project. The project aimed to develop a computer interface that would allow a human to interact with an artificial agent in an emotional manner.

Germanium bonding to AI2O3

Germanium has been bonded to both single crystal Al2O 3 (sapphire) as well as fine grain Al2O3. A germanium to sapphire bonding energy of 3 J/m2 has been measured after a 200 °C bond anneal. Micro voids formed between the germanium/sapphire interface can be removed by employing an interfacial layer of silicon dioxide on either surface. Patterning the sapphire into a grid pattern prior to bonding creates an escape path for trapped gas or moisture allowing micro void free direct bonding to be achieved. Modifying the surface of the fine grain Al2O3 surface with a polycrystalline silicon deposition and polish creates a surface, having an rms roughness (measured over a 250© m2 area), of 1.5nm, suitable for bonding. Techniques employed in the germanium sapphire bonding can then be used in the bonding of fine grain A12O3 to germanium. © The Electrochemical Society.