Le statuts y stématique du Genévrier oxycédre Junyperus oxycedrus L. (Cupressacées): une contribution d'ordre biochimique et biométrique

Dimensiosis des galbules et/ou teneur en prodelphinidine des aiguilles permettent trés généralement de déterminer les sous-espéces oxycedrus et macrocarpa, respectivement septentrionale-continentale et méridionale-insulaire, du Genévrier oxyeédre Juniperus oxycedrus L. Parcontre, la sous-espéce nord-africaine rufescens (en montagne) ne parah pas distinguable à ces titres de la sous-espéce type. Mais l’étude biochimique plus approfondie d’une (méta)population languedocienne montre l’existence d’un polymorphisme proanthocyanique indépendant de la taille des galbules. Les deux sous-espéces classiquement reconnues pourraient donc n’étre que les formes extremes, homozygotes pour le caractére chimique considéré, d’un méme génóme spécifique. Si les spécimens littoraux (Corse, Majorque, Maghreb) correspondent bien à la pleine expression (= prodelphinidine forte) de ce polymorphisme, certains échantillons «péri-littoraux» (Baléares et Languedoc) trahissent une introgression (actuelle ou ancienne) ayee appartion d’individus hétérozygotes, aux teneurs intermédiaires: des génes «macrocarpa» sont done bien presents au nord de la Méditerranée, méme si le phénoméne n’est pas morphologiquement décelable, et ne mérite pas d’étre formalisé en termes systématiques.

Place et rôle de Juniperus thurifera dans les structures de vegetation des Alpes du Sud

Les formations a genévrier thurifère des Alpes françcaises du sud, présentent un intérêt biogeographique et historique de première importance. Les auteurs étudient les structures de végétation que le genevrier organise dans les étages supraméditerranéen et montagnards.

Groupements arbustifs el mégaphorbiaies du haut Jura français. Quelques aspects particuliers

Tras las observaciones efectuadas durante la sesión de la Amical Internacional de Fitosociogía en la Jura franco-suiza, los autores exponen alganos datos complementarios sobre las comunidades megafórbicas jurasianas con Cicerbita alpina y Adenostyles alliaria y analizan desde un nuevo punto de vista, la comunidad arbustiva de Jun¡perus nana, Pinus uncinata, Sorbus chamaespilus, Laburnum alpinum.., que existen en los pisos subalpino y montano superior del Jura.

Serotonin Transporter Gene Polymorphism and Myocardial Infarction - Etude Cas-te'moins de L'Infarctus du Myocarde (ECTIM)

Background— Depression is a risk factor for myocardial infarction (MI). Selective serotonin reuptake inhibitors reduce this risk. The site of action is the serotonin transporter (SLC6A4), which is expressed in brain and blood cells. A functional polymorphism in the promoter region of the SLC6A4 gene has been described. This polymorphism may be associated with the risk of MI. Methods and Results— The SLC6A4 polymorphism has been investigated by polymerase chain reaction in 671 male patients with MI and in 688 controls from the Etude Cas-Témoins de l’Infarctus du Myocarde (ECTIM) multicentric study. Percentages for LL, LS, and SS genotypes were 35.5%, 45.4%, and 19.1%, respectively, for cases versus 28.1%, 49.1%, and 22.8%, respectively, for controls. S allele frequency was 41.8% and 47.4% for cases and controls, respectively. After adjustment for age and center by using multivariable logistic regression, the odds ratio for MI associated with the LL genotype was 1.40 (95% CI 1.11 to 1.76, P=0.0047). Conclusions— The LL genotype of the SLC6A4 polymorphism is associated with a higher risk of MI. This could be attributable to the effect of the polymorphism on serotonin-mediated platelet activation or smooth muscle cell proliferation or on other risk factors, such as depression or response to stress

La otra Ley de Foucault. Una lectura crítica

Few studies have addressed the relationship between law and power in the works of Michel Foucault. Some authors emphasize that law performs a completely secondary role in the diagram of power of modernity, while others argue that there is a close link between power relations and the law. Foucault's Law by Golden and Fitzpatrick aims to renew these discussions and reconstruct another law of Foucault. In this paper I make a critical reading of this work, highlighting the faulty presentation that the authors carried out of the works of Foucault.

Electrical Characterisation of SOI Substrates Incorporating WSix Ground Planes

Silicon-on-insulator (SOI) substrates incorporating tungsten silicide ground planes (GPs) have been shown to offer the lowest reported crosstalk figure of merit for application in mixed signal integrated circuits. The inclusion of the silicide layer in the structure may lead to stress or defects in the overlying SOI layers and resultant degradation of device performance. It is therefore essential to establish the quality of the silicon on the GPSOI substrate. MOS capacitor structures have been employed in this paper to characterize these GPSOI substrates for the first time. High quality MOS capacitor characteristics have been achieved with minority carrier lifetime of similar to 0.8 ms. These results show that the substrate is suitable for device manufacture with no degradation in the silicon due to stress or metallic contamination resulting from the inclusion of the underlying silicide layer.

Parameter sensitivity for optimal design of 65 nm node SOI transistors

Mixed-mode simulation, where device simulation is embedded directly within a circuit simulator, is used for the first time to provide scaling guidelines to achieve optimal digital circuit performance for double gate SOI MOSFETs. This significant advance overcomes the lack of availability of SPICE model parameters. The sensitivity of the gate delay and on-off current ratio to each of the key geometric and technological parameters of the transistor is quantified. The impact of the source-drain doping profile on circuit performance is comprehensively investigated.

Optimisation of source/drain extension region profile for suppression of short channel effects in sub-50 nm DG SOI MOSFETs with high- k gate dielectrics

Novel technology dependent scaling parameters i.e. spacer to gradient ratio and effective channel length (Leff) are proposed for source/drain engineered DG MOSFET, and their significance in minimizing short channel effects (SCES) in high-k gate dielectrics is discussed in detail. Results show that a high-k dielectric should be associated with a higher spacer to gradient ratio to minimise SCEs The analytical model agrees with simulated data over the entire range of spacer widths, doping gradients, high-k gate dielectrics and effective channel lengths.

Ultralow Silicon Substrate Noise Crosstalk Using Metal Faraday Cages in an SOI Technology

In mixed signal integrated circuits noise from the digital circuitry can upset the sensitive analogue circuitry. The Faraday cage structure reported here is based on the unique ground plane SOI technology developed some of the authors. The suppression of crosstalk achieved is an order of magnitude greater than that previously published for frequencies up to 10 GHz. The significance of the technology will be even greater as the operating frequency is increased. This collaborative EPSRC project was judge as tending to outstanding.

SiGe HBTs on Bonded SOI Incorporating Buried Silicide Layers

The performance of silicon bipolar transistors has been significantly improved by the use of ultra narrow base layers of SiGe. To further improve device performance by minimising parasitic resistance and capacitance the authors produced an unique silicon-on-insulator (SOI) substrate incorporating a buried tungsten disilicide layer. This structure forms the basis of a recent submission by Zarlink Semiconductors ( Silvaco, DeMontfort & Queen�s) to DTI for high voltage devices for automotive applications. The Queen�s part of the original EPSRC project was rated as tending to outstanding.