Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates

In this paper, we investigated the self-assembled quantum dots formed on (100) and (N11)B (N = 2, 3, 4, 5) InP substrates by molecular beam epitaxy (MBE). Two kinds of ternary QDs (In0.9Ga0.1As and In0.9Al0.1As QDs) are grown on the above substrates; Transmission electron microscopy (TEM) and photoluminescence (PL) results confirm QDs formation for all samples. The PL spectra reveal obvious differences in integral luminescence, peak position, full-width at half-maximum and peak shape between different oriented surfaces. Highest PL integral intensity is observed from QDs on (411)B surfaces, which shows a potential for improving the optical properties of QDs by using high-index surface. (C) 2000 Elsevier Science B.V. All rights reserved.

Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition

We present some results on the effect of initial buffer layer on the crystalline quality of Cubic GaN epitaxial layers grown on GaAs(100) substrates by metalorganic chemical vapor deposition. Photoluminescence and Hall measurements were performed to characterize the electrical and optical properties of cubic GaN. The crystalline quality subsequently grown high-temperature (HT) cubic GaN layers strongly depended on thermal effects during the temperature ramping process after low temperature (LT) growth of the buffer layers. Atomic force microscope (AFM) and reflection high-energy electron diffraction (RHEED) were employed to investigate this temperature ramping process. Furthermore, the role of thermal treatment during the temperature ramping process was identified. Using the optimum buffer layer, the full width at half maxim (FWHM) at room temperature photoluminescence 5.6 nm was achieved. To our knowledge, this is the best FWHM value for cubic GaN to date. The background carrier concentration was as low as 3 x 10(13) cm(-3). (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Investigation of the polyetherketone guest-host DR1/PEK-c polymer films by real-time monitoring of the second-harmonic generation

The real-time monitoring of the second-harmonic generation (SHG) was used to optimize the poling condition and to study the nonlinear optical (NLO) properties of the polyetherketone (PEK-c) guest-host polymer films. The high second-order NLO coefficient chi(33)((2)) = 11.02 pm/v measured at 1.064 mu m was achieved when the weight percent of DR1 guest in the polymer system is 20%. The NLO activity of the poled DR1/PEK-c polymer film can maintain more than 80% of its initial value when temperature is under 100 degrees C, and the normalized second-order NLO coefficient can maintain more than 85% after 2400 s at 80 degrees C. (C) 2000 Elsevier Science Ltd. All rights reserved.

Room-temperature optical transitions in Mg-doped cubic GaN/GaAs(100) grown by metalorganic chemical vapor deposition

The mechanism of room-temperature optical transitions in a Mg-doped cubic GaN epilayer grown on GaAs(100) by metalorganic chemical vapor deposition has been investigated. By examining the dependence of photoluminescence on the excitation intensity (which varied over four orders) at room temperature, four different emissions with different origins were identified. A blue emission at similar to 3.037 eV was associated with a shallow Mg acceptor, while three different lower-energy emissions at similar to 2.895, similar to 2.716, and similar to 2.639 eV were associated with a deep Mg complex. In addition to a shallow acceptor at E congruent to 0.213 eV, three Mg-related deep defect levels were also found at around 215, 374, and 570 meV (from the conduction band). (C) 2000 American Institute of Physics. [S0021-8979(00)01904-6].

Photovoltaic effect of cubic GaN/GaAs(100)

We have studied the photovoltaic effect in cubic GaN on GaAs at room temperature. The photovoltaic spectra of cubic GaN epitaxial film were concealed by the photovoltaic effect from the GaAs substrate unless additional illumination of a 632.8 nm He-Ne laser beam was used to remove the interference of the GaAs absorption in the measurement. On the basis of the near-band-edge photovoltaic spectra of cubic GaN, we obtained the minority carrier diffusion lengths of about 0.32 and 0.14 mu m for two undoped n-type cubic GaN samples with background concentrations of 10(14) and 10(18) cm(-3), respectively. (C) 1999 American Institute of Physics. [S0003-6951(99)00450-7].

Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100)

The effect of Si overgrowth on the structural and luminescence properties of strained Ge layer grown on Si(1 0 0) is studied. Capping Si leads to the dissolution of Ge island apex and reduced island height. The structural changes in island shape, especially in chemical composition during Si overgrowth have a large effect on the PL properties. The integrated PL intensity of Ge layer increases and there are large blue shifts in peak energies after capping Si. The PL spectra from buried Ge layer are consistent with type-II band alignment in SiGe/Si. We show that the PL properties from buried Ge layer may be tailored by modifying the cap layer growth conditions as well as post-growth annealing. (C) 1999 Elsevier Science B.V. All rights reserved.

Effect of Si doping on cubic GaN films grown on GaAs(100)

Epitaxial layers of cubic GaN have been grown by metalorganic vapor-phase epitaxy (MOVPE) with Si-doping carrier concentration ranging from 3 x 10(18) to 2.4 x 10(20)/cm(3). Si-doping decreased the yellow emission of GaN. However, the heavily doped n-type material has been found to induce phase transformation. As the Si-doping concentration increases, the hexagonal GaN nanoparticles increase. Judged from the linewidth of X-ray rocking curve, Si-doping increases the density of dislocations and stacking faults. Based on these observations, a model is proposed to interpret the phase transformation induced by the generated microdefects, such as dislocations and precipitates, and induced stacking faults under heavy Si-doping. (C) 1999 Elsevier Science B.V. All rights reserved.

Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy

In this paper, InGaAs quantum dots with an adjusting InGaAlAs layer underneath are grown on (n 1 1)A/B (n = 2-5) and the reference (1 0 0) substrates by molecular beam epitaxy. Small and dense InGaAs quantum dots are formed on (1 0 0) and (n 1 1)B substrates. A comparative study by atomic force microscopy shows that the alignment and uniformity for InGaAs quantum dots are greatly improved on(5 1 1)B but deteriorated on (3 1 1)B surface, demonstrating the great influence of the buried InGaAlAs layer. There is an increase in photoluminescence intensity and a decrease in the full-width at half-maximum when n varies from 2 to 5. Quantum dots formed on (3 1 1)A and (5 1 1)A surfaces are large and random in distribution, and no emission from these dots can be detected. (C) 1999 Elsevier Science B.V. All rights reserved.

High-density InAs nanowires realized in situ on (100) InP

High-density InAs nanowires embedded in an In0.52Al0.48As matrix are fabricated in situ by molecular beam epitaxy on (100) InP. The average cross section of the nanowires is 4.5 x 10 nm(2). The linear density is as high as 70 wires/mu m. The spatial alignment of the multilayer arrays exhibit strong anticorrelation in the growth direction. Large polarization anisotropic effect is observed in polarized photoluminescence measurements. (C) 1999 American Institute of Physics. [S0003-6951(99)04134-0].

Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing

Strain relaxation in initially flat SiGe film on Si(1 0 0) during rapid thermal annealing is studied. The surface roughens after high-temperature annealing, which has been attributed to the intrinsic strain in the epilayers. It is interesting to find that high-temperature annealing also results in roughened interface, indicating the occurrence of preferential interdiffusion. It is suggested that the roughening at the surface makes the intrinsic strain in the epilayer as well as the substrate unequally distributed, causing preferential interdiffusion at the SiGe/Si interface during high-temperature annealing. (C) 1999 Elsevier Science B.V. All rights reserved.

Effects of annealing on self-organized InAs quantum islands on GaAs (100)

Self-organized InAs islands on (001) GaAs grown by molecular beam epitaxy were annealed and characterized with photoluminescence (PL) and transmission electron microscopy (TEM). The PL spectra from the InAs islands demonstrated that annealing resulted in a blueshift in peak energy, a reduction in intensity, and a narrower linewidth in the PL peak. In addition, the TEM analysis revealed the relaxation of strain in some InAs islands with the introduction of the network of 90 degrees dislocations. The correlation between the changes in the PL spectra and the relaxation of strain in InAs islands was discussed. (C) 1998 American Institute of Physics. [S0003-6951(98)01850-6].

Gallium diffusion through cubic GaN films grown on GaAs(100) at high-temperature using low-pressure MOVPE

Cubic GaN films were grown on GaAs(1 0 0) substrates by low-pressure metalorganic vapor-phase epitaxy at high temperature. We have found a nonlinear relation between GaN film thickness and growth timer and this nonlinearity becomes more obvious with increasing growth temperature. We assumed it was because of Ga diffusion through the GaN film, and developed a model which agrees well with the experimental results. These results raise questions concerning the role of Ga diffusion through the GaN film, which may affect the electrical and optical properties of the material. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates

Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates grown by metalorganic chemical vapor deposition (MOCVD) is studied. An abnormal trend of the evolution on temperature is observed. With the increase of the growth temperature, while the density of the large dots decreases continually, that of the small dots first grows larger when temperature was below 520 degrees C, and then there is a sudden decrease at 535 degrees C. Photoluminescence (PL) studies show that QDs on vicinal substrates have a narrower PL line width, a longer emission wavelength and a larger PL intensity.

Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

Hydrogenated nanocrystalline silicon (nc-Si:H) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) wafers. The nc-Si:H n-layers were deposited by radio-frequency (RF) plasma enhanced chemical vapor deposition (PECVD), and characterized using Raman spectroscopy, optical transmittance and activation energy of dark-conductivity. The nc-Si:H n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. Heterojunction solar cells incorporated with the nc-Si n-layer were fabricated using configuration of Ag (100 nm)/1T0 (80 nm)/n-nc-Si:H (15 nm)/buffer a-Si:H/p-c-Si (300 mu m)/Al (200 nm), where a very thin intrinsic a-Si:H buffer layer was used to passivate the p-c-Si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. The results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1% on an area of 2.43 cm(2). (c) 2006 Elsevier B.V. All rights reserved.

酚酞型聚芳醚砜共聚物与共混物－(PP/BiS-T) PES共聚物和(PPS/PES-C)、(PPO/PES-C)共混物的合成、结构与性能研究

本工作旨在通过共聚、共混技术制备酚酞型聚芳醚砜共聚物(PP/BiS-T) PES和共混物(PPS/PES-C)、PPO/PES-C，以便改善酚酞型聚芳醚砜（PES－C）的加工性能（特别是注射加工性能）和耐溶剂性能。通过研究共聚物和共混物的微观结构，聚集态结构与性能的关系，探索改善酚酞型聚芳醚硕性能的有效途径第一部分：(PP/BiS-T) PES共聚物的合成、结构与性能(PP/BiS-T) PES共聚物是以4，4'二氯二苯砜（DCDPS）、酚酞（PP）和4，4'－二羟基二苯硫醚(BiS-T)为单体，采用固体无水K_2CO_3/NMP/TMSO_2 混合溶剂反应体系合成的。共聚反应规律研究表明：在NMP/TMSO_2混合溶剂中，共聚反应可以顺利进行，避免了交联反应的发生，并成功地合成了高分子量的(PP/BiS-T) PES共聚物。DSC分析结果表明(PP/BiS-T) PES系列属于无定形的均相共聚物体系，每一组成比例对应的共聚物只具有一个玻璃化转变温度。且随组成比例的改变呈线性变化，TBA分析结果与DSC基本一致，并证实了(PP/BiS-T) PES属于均相共聚物体系，而不是均聚物的共混物。TG分析表明：共聚物具有良好的耐热氧化稳定性BiS-T链节在分子链中起到了提高自身抗氧性的作用。1R光谱对共聚物的结构进行表征。~(13)C-NMR分析确认共聚物多属于无规共聚物。动态力学试验表明共聚物(PP/BiS-T) PES以及PES－C，在－100 ℃附近和0－100 ℃，存在着次级松驰与转变，并发现水分子的存在对这种转变（次级松驰）有一定的影响。共聚物的熔融流动性试验和溶解性试验表明共聚物(PP/BiS-T) PES具有稍好于PES－C的熔融流动性；溶解性与PES－C类似。力学试验说明共聚物属于强而硬类型的聚合物。第二部分：PPS/PES－C共混物的制备、聚集态结构与性能PPS/PES－C共混物是以联苯/二苯硕混合物为溶剂，采用溶液沉析方法制备的，DSC、WAXD，SEM和1R分析手段对共混物的聚集态结构和微观结构进行了表征。DSC分析认为共混物属于多相体系，PPS的结晶性随着PES－C含量增加而降低。DSC和SEM观察结果表明：相转变发生在PPS占40％左右。PPS占25％时，DSC曲线呈现出界面相玻璃化转变温度。共混物具有良好的耐热氧化稳定性和耐热分解稳定性。微晶大小计算结果：PES－C存在导致了PPS微晶大小降低。WAXD曲线表明PPS占50％，共混物中的PPS具有较好的结晶性。SEM观察发现：随着PES－C含量增加，PES－C由分散相（PES－C50％）变为连续相（PES－C70％）。PPS占50％或低于50％时，共混物体系不仅发生了微观相分离，而且发生了宏观相分离。M.I.指数表明共混物中PPS为连续相时，共混物具有良好的熔融流动性。溶解性试验结果：共混物具有较好的耐溶剂性。第三部分：PPO/PES－C共混物的合成、结构与性能 PPO/PES－C共混物系用溶液－涂膜法，以氯彷为溶剂制备的。讨论了由同一共混物溶液浓度下制备的共混物的互溶性随组成的改变而变化。DSC分析结果：PPO/PES－C属于部分相溶性体系。利用Fox方程推导式计算结果表明PPO在富PES－C相中具有良好的分散性；而PES－C在富PPO相中的分散性较差。共混物(PPO/PES－C)试样经丙酮浸泡后，PPO（>50％）发生了溶剂诱导结晶现象，同时丙酮促使共混物发生完全相分离。结晶溶化热显示共混物中少量的PES－C存在有利于PPO的溶剂诱导结晶。TG分析表明共混物具有良好的耐热分解稳定性和耐热氧化分解稳定性。偏光显微镜下观察到PPO球晶的存在。SEM和FT－1R分别对共混物的形态结构和微观结构进行了表征。WAXD试验证实了丙酮处理的(PPO/PES－C)（70/30），（90/10）共混物中PPO的结晶性。溶解性试验表明：PPO掺入有助于 PES－C的耐溶剂性提高。