Continuous-wave electrically injected InP/GaInAsP equilateral-triangle-resonator lasers

Equilateral-triangle-resonator (ETR) microlasers with an output waveguide connected to one of the vertices of the ETR are fabricated using standard photolithography and inductively-coupled-plasma etching techniques. Continuous-wave electrically injected 1550 nm ETR laser with side length ranged from 15 to 30 tm are realized at room temperature.

Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters

We have demonstrated an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) monolithically integrated with novel dual-waveguide spot-size converters (SSCs) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. The device is fabricated by means of selective-area MOVPE growth (SAG), quantum well intermixing (QWI) and asymmetric twin waveguide (ATG) technologies with only three steps low-pressure MOVPE growth. For the device structure, in SOA/EAM section, double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge stripe (BRS) were incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of both easy processing of ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB DC and more than 10 GHz 3-dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with cleaved single-mode optical fiber. (c) 2005 Elsevier B.V. All rights reserved.

Fabrication of a novel silica PLC hybrid integrated triplexer

A new-style silica planar lightwave circuit (PLC) hybrid integrated triplexer, which can demultiplex 1490-nm download data and 1550-nm download analog signals, as well as transmit 1310-nm upload data, is presented. It combines SiO2 arrayed waveguide gratings (AWGs) with integrated photodetectors (PDs) and a high performance laser diode (LD). The SiO2 AWGs realize the three-wavelength coarse wavelength-division multiplexing (CWDM). The crosstalk is less than 40 dB between the 1490- and 1550-nm channels, and less than 45 dB between 1310- and 1490- or 1550-nm channels. For the static performances of the integrated triplexer, its upload output power is 0.4 mW, and the download output photo-generated current is 76 A. In the small-signal measurement, the upstream 3-dB bandwidth of the triplexer is 4 GHz, while the downstream 3-dB bandwidths of both the analog and digital sections reach 1.9 GHz.

Dispersion characteristics of nanometer-scaled silicon rib waveguides

We investigate the dispersion properties of nanometer-scaled silicon waveguides with channel and rib cross section around the optical fiber communication wavelength and systematically study their relationship with the key structural parameters of the waveguide. The simulation results show that the introduction of an extra degree of freedom in the rib depth enables the rib waveguide more flexible in engineering the group velocity dispersion (GVD) compared with the channel waveguide. Besides, we get the structural parameters of the waveguides that can realize zero-GVD at 1550 nm.

Solid-core tellurite glass fiber for infrared and nonlinear applications

By optimizing glass composition and using a multistage dehydration process, a ternary 80TeO(2)-10ZnO-10Na(2)O glass is obtained that shows excellent transparency in the wavelength range from 0.38 mu m up to 6.10 mu m. Based on this optimized composition, we report on the fabrication of a single-mode solid-core tellurite glass fiber with large mode area of 103 mu m(2) and low loss of 0.24 similar to 0.7 dB/m at 1550 nm. By using the continuous-wave self-phase modulation method, the non-resonant nonlinear refractive index n(2) and the effective nonlinear parameter gamma of this made tellurite glass fiber were estimated to be 3.8x10(-1)9 m(2)/W and 10.6 W-1.m(-1) at 1550 nm, respectively. (C) 2009 Optical Society of America

基于silica波导光栅的单纤三向器的混合集成研究

通过有源实时监控系统,采用手动和自动相结合的方法,将光纤、silica基阵列波导光栅(AWG)、1310 nm激光器(LD)平台和1490 nm、1550 nm探测器(PD)平台用紫外同化胶混合集成为一新型单纤三向器.在耦合集成过程中,LD在15 mA偏置电流下,三向器的上行出纤功率大约为-4 dBm,LD和波导的耦合效率大约40%;当三向器输入1 550 nm光功率为1 mW,PD在2.6 V反向偏压下,下行输出光电流大约为76 μA,波导和PD的耦合效率大约为42%.三向器中采用了对管PD集成方法.

单纵模布里渊掺铒光纤激光器的实验研究

提出了一种具有多环形腔(MRC)和光纤布拉格光栅可调谐滤波器(FBG-TF)相结合的单纵模布里渊掺铒光纤激光器(BEDFL)。实验中通过观察激光器输出光的拍频信号分析其光谱精细结构,分别讨论了布里渊增益、FBG-TF、MRC对BEDFL单模输出的贡献,给出了激光器的功率特性曲线和波长稳定性测试图。实验得到了在1550 nm处功率为4 dBm,信噪比(SNR)>60 dB,线宽小于1.5 kHz的稳定单纵模输出光。

单纵模多环形腔掺铒光纤激光器及其稳定性

介绍了一种多环形腔结构(MRC)的单纵模(SLM)掺铒光纤激光器(EDFL)。这种激光器通过在主环形腔中插入充当模式滤波器的三个长度不等的无源次级环形腔, 并结合腔内光纤布拉格光栅(FBG)形成多环形腔掺铒光纤激光器结构, 多环形谐振腔可保证激光器的单纵模输出。讨论了使激光器运行在单纵模状态的谐振腔理论。同时, 为了提高系统输出的频率稳定性, 采用外光注入方法有效地抑制了模式跳变和拍噪声, 改善了输出谱特性。实验得到在1550.225 nm处输出功率约3.6 dBm, 信噪比(SNR)>35 dB的单纵模输出光, 且测得线宽小于500 Hz。

A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs

A novel unselective regrowth buried heterostructure long-wavelength superluminescent diode （SLD） with a graded composition bulk InGaAs active region is developed by metalorganic vapor phase epitaxy （MOVPE）. At a 150mA injection current, the full width at half maximum of the emission spectrum of the SLD is about 72nm, ranging from 1602 to 1674nm. The emission spectrum is smooth and flat. The ripple of the spectrum is less than 0.3dB at any wavelength from 1550 to 1700nm. An output power of 4.3mW is obtained at a 200mA injection current under continuous-wave operation at room temperature. This device is suitable for the applications of light sources for gas detectors and L-band optical fiber communications.

An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter

A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spotsize converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology. A 1550-1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved. The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°× 18.0°, respectively, resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.

宽带半导体可饱和吸收镜研制方法及选择腐蚀研究

介绍了用于固体激光器被动锁模自启动实现飞秒级脉冲输出的两种波长的带半导体可饱和吸收镜(800nm和1550 nm SESAMs)的研制方法和应用.制作宽带反射层的关键技术之一是AlGaAs/GaAs和InP/InGaAs/InGaAs的选择腐蚀.分别就几种湿法腐蚀和干法腐蚀进行了详细的分析和比较.

1×8阵列波导光栅型波分复用/解复用器设计的一种简单方法

用有效折射率法，采用近轴近似和波导模场分布的高斯近似，简化了阵列波导光栅(AWG)器件的设计过程中繁杂的计算，且保证了器件的性能指标。给出了设计思路，并给出了1×8路、中心波长为1550.9nm，波长间隔为1.6nm的AWG波分复用/解复用器的设计实例。

Fabrication of semiconductor optical amplifiers and a novel gain measuring technique

The design and fabrication of 1550 nm semiconductor optical amplifiers (SOAs) and the characteristics of the fabricated SOA are reported. A novel gain measurement technique based on the integrations of the product of emission spectrum and a phase function over one mode interval is proposed for Fabry-Perot semiconductor lasers.