Fabrication of semiconductor optical amplifiers and a novel gain measuring technique


Autoria(s): Huang YZ; Guo WH; Yu LJ; Lu XL; Tan MQ; Ma XY
Data(s)

2003

Resumo

The design and fabrication of 1550 nm semiconductor optical amplifiers (SOAs) and the characteristics of the fabricated SOA are reported. A novel gain measurement technique based on the integrations of the product of emission spectrum and a phase function over one mode interval is proposed for Fabry-Perot semiconductor lasers.

The design and fabrication of 1550 nm semiconductor optical amplifiers (SOAs) and the characteristics of the fabricated SOA are reported. A novel gain measurement technique based on the integrations of the product of emission spectrum and a phase function over one mode interval is proposed for Fabry-Perot semiconductor lasers.

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Hong Kong Baptist Univ.; Chinese Univ Hong Kong.; City Univ Hong Kong.; Hong Kong Polytech Univ.; Univ Hong Kong.; IEEE LEOS Hong Kong Chapter.; AIXTRON AG.; Kopin Corp.; Oxford Instruments Teltec Semiconductor Pacific Ltd.; Hong Kong Sci & Technol Pk Corp.; Soc Informat Display Hong Kong Chapter.

Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

Hong Kong Baptist Univ.; Chinese Univ Hong Kong.; City Univ Hong Kong.; Hong Kong Polytech Univ.; Univ Hong Kong.; IEEE LEOS Hong Kong Chapter.; AIXTRON AG.; Kopin Corp.; Oxford Instruments Teltec Semiconductor Pacific Ltd.; Hong Kong Sci & Technol Pk Corp.; Soc Informat Display Hong Kong Chapter.

Identificador

http://ir.semi.ac.cn/handle/172111/13571

http://www.irgrid.ac.cn/handle/1471x/104967

Idioma(s)

英语

Publicador

IEEE

345 E 47TH ST, NEW YORK, NY 10017 USA

Fonte

Huang YZ; Guo WH; Yu LJ; Lu XL; Tan MQ; Ma XY .Fabrication of semiconductor optical amplifiers and a novel gain measuring technique .见:IEEE .PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM,345 E 47TH ST, NEW YORK, NY 10017 USA ,2003,62-65

Palavras-Chave #光电子学 #SPECTRA #LASERS
Tipo

会议论文