High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide

The 940 nm Al-free active region laser diodes and bars with a broad waveguide were designed and fabricated. The stuctures were grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 6.7 W in the 100 f^m broad-area laser diodes has been measured, and is 2. 5 times higher than that in the Al-containing active region laser diodes with a narrow waveguide and 1. 7 times higher than that in Al-free active region laser diodes with a narrow waveguide. The 19 % fill-factor laser diode bars emit 33 W, and they can operate at 15W with low degradation rates.

Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes

We have investigated the optical properties of asymmetric multiple layer stacked self-assembled InAs quantum dot with different interlayer. We found that asymmetric multiple stacked QD samples with In0.2Ga0.8As + GaAs interlayer can afford a 180nm flat spectral width with strong PL intensity compared to other samples at room temperature. We think this result is due to the introduction of In0.2Ga0.8As strain-reducing layer. Additionally, for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for quantum-dot superluminescent diodes.

High efficiency, low vertical divergence angle 980nnn Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers

980nm InGaAs/InGaAsP/AlGaAs strained quantum well lasers,vitta novel large optical cavity and asymmetrical claddings was fabricated bg MOCVD. Very high differential quantum efficiency elf 90% (1.15W/A) and low vertical divergence angle of 24 degrees at long cavity length were obtained for 100 mu m stripe lasers. The differential quantum efficiency is up to 94% (1.20) at cavity length of 500 mu m.

Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure

Microphotoluminescence (mu-PL) investigation has been performed at room temperature on InAs quantum dot (QD) vertical cavity surface emitting laser (VCSEL) structure in order to characterize the QD epitaxial structure which was designed for 1.3 mu m wave band emission. Actual and precise QD emission spectra including distinct ground state (GS) and excited state (ES) transition peaks are obtained by an edge-excitation and edge-emission (EEEE) mu-PL configuration. Conventional photoluminescence methods for QD-VCSELs structure analysis are compared and discussed, which indicate the EEEE mu-PL is a useful tool to determine the optical features of the QD active region in an as-grown VCSEL structure. Some experimental results have been compared with simulation results obtained with the aid of the plane-wave admittance method. After adjustment of epitaxial growth according to EEEE mu-PL measurement results, QD-VCSEL structure wafer with QD GS transition wavelength of 1300 nm and lasing wavelength of 1301 nm was obtained.

Broadly Tunable Grating-Coupled External Cavity Laser With Quantum-Dot Active Region

A broadly tunable and high-power grating-coupled external cavity laser with a tuning range of more than 200 nm and a similar to 200-mW maximum output power was realized, by utilizing a gain device with the chirped multiple quantum-dot (QD) active layers and bent waveguide structure. The chirped QD active medium, which consists of QD layers with InGaAs strain-reducing layers different in thickness, is beneficial to the broadening of the material gain spectrum. The bent waveguide structure and facet antireflection coating are both effective for the suppression of inner-cavity lasing under large injection current.