Small-Signal Equivalent-Circuit Model and Characterization of 1.55-mu m Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers

The work was supported in part by the National Natural Science Foundation of China under Grant 60536010, Grant 60606019, Grant 60777029, and Grant 60820106004, and in part by the National Basic Research Program of China under Grant 2006CB604902, Grant 2006CB302806, and Grant 2006dfa11880.

Design and analysis of 1.3 mu m GaAs-based quantum dot vertical-cavity surface-emitting lasers

A theoretical study on 1.3 mu m GaAs-based quantum dot vertical-cavity surface-emitting lasers (VCSELs) was made. Investigation of the influence of VCSELs on the optical confinement factors and the optical loss and the calculation of the material gain of the assembled InGaAs/GaAs quantum dots. Analysis of the threshold characteristic was made and the multi-wavelength cavity and multilayer quantum-dot stack structure is found to be more suitable for quantum dot VCSELs.

Investigation on anisotropy of vertical-cavity surface-emitting lasers

We have studied the spontaneous emission of polarized excitons in the GaInP/AlGaInP vertical-cavity surface-emitting lasers from 50 K to room temperature. It is observed that the spontaneous emission peak enters and leaves the resonant regime. At the resonant regime, the emission intensities of the perpendicularly and horizontally polarized excitons are enhanced and their proportions are different from that in nonresonant regime. These experimental results are explained by the dressed exciton theory of the semiconductor microcavity device. Based on this theory, the intensity enhancement and the polarization dependence are understood as cooperative emission and the microcavity anisotropy. (C) 2000 American Institute of Physics. [S0021-8979(00)05315-9].

Effect of reflectivity at the interface of oxide layer on transverse mode control in oxide confined vertical-cavity surface-emitting lasers

The transverse mode control in oxide confined vertical-cavity surface-emitting lasers is discussed by modeling the dielectric aperture as a uniform waveguide and an extra reflectivity at the oxide layer. The phase of the extra reflectivity and the refractive index step can be adjusted to change the mode threshold gain. We calculate the lateral refractive index step from the mode wavelength difference between aperture and perimeter modes, and compare it with that obtained from the weighted average index. The mode reflectivity in terms of the lateral optical confinement factor at the oxide layer is considered in calculating the threshold gain for transverse modes. The numerical results show that higher transverse modes can be suppressed by adjusting the position of a thin AlAs-oxide layer inside a three-quarter-wave layer in the distributed Bragg reflector. (C) 1998 American Institute of Physics. [S0021-8979(98)04007-9].

Self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers

The self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) has been investigated using a self-consistent theoretical model. Good agreement is obtained between theoretical analysis and experimental results under pulsed operation. The results show that in p-doped QD VCSELs, the output power is significantly influenced by self-heating. About 60% of output power is limited by self-heating in a device with oxide aperture of 5x6 mu m(2). This value reduces to 55% and 48%, respectively, as the oxide aperture increases to 7x8 and 15x15 mu m(2). The temperature increase in the active region and injection efficiency of the QDs are calculated and discussed based on the different oxide aperture areas and duty cycle.

COMPARISON BETWEEN THE INFLUENCES OF LAYER THICKNESSES AND ALAS MOLE FRACTION-X ON VERTICAL-CAVITY SURFACE-EMITTING LASERS

Based on the n(x, lambda), the calculation of the reflection spectrum for vertical cavity surface emitting lasers shows that the deviation of the central wavelength caused by the change of layer thickness is much more than that caused by the change of AlAs mole fractions. Therefore the control of the MBE growth rate is very important.

Array for 980nm Vertical Cavity Surface Emitting Diodes and Detectors

Both the vertical cavity surface emitting diodes and detectors are fabricated by using the epitaxial wafer with resonant cavity structure. Their characteristics are analyzed. The light emitters have high spectral purity of 4.8nm and high electroluminescence intensity of 0.7mW while injection current is 50mA. A 1*16 array of surface emitting light device is tested on line by probes and then used for module. The light detectors have wavelength selectivity and space selectivity. The required difference in input mirror reflectivity between emitters and detectors can easily be achieved though varying the numbers of top DBR period by etching.

Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers

国家自然科学基金

1.55-μm VCSEL transmission performance up to 20 Gb/s for access networks

We experimentally demonstrate for the first time 1.55μm vertical-cavity surface-emitting laser (VCSEL) transmission over 6.5 km single mode fiber (SMF) at 20 Gb/s for optical access networks. Characterization of the device is also investigated. © 2009 IEEE.

HIGH-EFFICIENCY TOP SURFACE-EMITTING LASERS FABRICATED BY 4 IMPLANTATION USING TUNGSTEN WIRE AS MASK

We report the results of a high efficiency room temperature continuous wave (cw) vertical-cavity surface-emitting laser. The structure is obtained by four deep H+ implantation using tungsten wires as the mask. The fabrication process is the simplest ever reported in vertical-cavity surface-emitting laser fabrication. The largest differential quantum efficiency of 65% and maximum cw light output power over 4 mW have been achieved for the 15X15 mu m(2) device. (C) 1995 American Institute of Physics.

High Speed VCSEL-Based Parallel Optical Transmission Modules

Design and fabrication of a parallel optical transmitter are reported. The optimized 12 channel parallel optical transmitter,with each channel＇s data rate up to 3Gbit/s,is designed, assembled, and measured. A top-emitting 850nm vertical cavity surface emitting laser（VCSEL） array is adopted as the light source,and the VCSEL chip is directly wire bonded to a 12 channel driver IC. The outputs of the VCSEL array are directly butt coupled into a 12 channel fiber array. Small form factor pluggable （SFP） packaging technology is used in the module to support hot pluggable in application. The performance results of the module are demonstrated. At an operating current of 8mA, an eye diagram at 3Gbit/s is achieved with an optical output of more than 1mW.

16-channel 0.35 mu m CMOS/VCSEL optoelectronic devices

We report some investigations on vertical cavity surface emitting laser (VCSEL) arrays and VCSEL based optoelectronic smart photonic multiple chip modules (MCM), consisting of 1 x 16 vertical cavity surface emitting laser array and 16-channel lasers driver 0.35 mum CMOS circuit. The hybrid integrated multiple chip modules based on VCSEL operate at more than 2GHz in -3dB frequency bandwidth.

Hybrid CMOS/VCSEL optoelectronic modules

We report some investigations on vertical cavity surface emitting laser (VCSEL) arrays and VCSEL based optoelectronic smart photonic multiple chip modules (MCM), consisting of 1x16 vertical cavity surface emitting laser array and 16-channel lasers driver 0.35 Pin CMOS circuit. The hybrid integrated multiple chip modules based on VCSEL operate at more than 2GHz in -3dB frequency bandwidth.

VCSEL based optoelectronic multiple chip modules

We report on optoelectronic multiple chip modules, consisting of vertical cavity surface emitting laser(VCSEL), photodetector and 1.2 mum CMOS electronic circuit, The hybrid integrated components operate at a date rate of 155Mb/s, which could be used in optical interconnects for multiple computers.

Distance measurement using the change in junction voltage across a laser diode due to the self-mixing effect

Conventional detection scheme for self-mixing sensors uses an integrated photodiode within the laser package to monitor the self mixing signal. This arrangement can be simplified by directly obtaining the self-mixing signals across the laser diode itself and omitting the photodiode. This work reports on a Vertical-Cavity Surface-Emitting Laser (VCSEL) based selfmixing sensor using the laser junction voltage to obtain the selfmixing signal. We show that the same information can be obtained with only minor changes to the extraction circuitry leading to potential cost saving with reductions in component costs and complexity and significant increase in bandwidth favoring high speed modulation. Experiments using both photo current and voltage detection were carried out and the results obtained show good agreement with the theory.