PHOTOLUMINESCENCE OF ORDERED GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

Optical properties of ordered Ga0.5In0.5P epitaxial layers grown by metalorganic vapor phase epitaxy are investigated by photoluminescence (PL) in a temperature range of 10-200 K using excitation power densities between 0.35 W/cm(2) and 20 W/cm(2). It is found that the intensity of the highest-energy PL peak of the ordered Ga0.5In0.5P epilayer decreases first, then increases and finally goes down again with increasing temperature. A model of ordered Ga0.5In0.5P epitaxial layers is proposed, in which the ordered Ga0.5In0.5P epilayer is regarded as a type-II quantum well structure with band-tail states, and the dependence of PL spectra on the temperature and excitation intensity is reasonably explained. (C) 1995 American Institute of Physics.

InP-base resonant tunneling diodes

We have fabricated In_0.53Ga_0.47As/AlAs/InP resonant tunneling diodes (RTDs) based on the air-bridge technology by using electron beam lithography processing.The epitaxial layers of the RTD were grown on semi-insulating (100) InP substrates by molecular beam epitaxy.RTDs with a peak current density of 24.6 kA/cm~2 and a peak-to-valley current ratio of 8.6 at room temperature have been demonstrated.

Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy

Lattice matched Ga_(1-x)In_xAs_ySb_(1-y) quaternary alloy films for thermophotovoltaic cells were successfully grown on n-type GaSb substrates by liquid phase epitaxy. Mirror-like surfaces for the epitaxial layers were achieved and evaluated by atomic force microscopy. The composition of the Ga_(1-x)In_xAs_ySb_(1-y) layer was characterized by energy dispersive X-ray analysis with the result that x = 0.2, y = 0.17. The absorption edges of the Ga_(1-x)In_xAs_ySb_(1-y) films were determined to be 2. 256μm at room temperature by Fourier transform infrared transmission spectrum analysis, corresponding to an energy gap of 0.55eV. Hall measurements show that the highest obtained electron mobility in the undoped p-type samples is 512cm2~/(V·s) and the carrier density is 6. 1×10~(16)cm~(-3) at room temperature. Finally, GaInAsSb based thermophotovoltaic cells in different structures with quantum efficiency values of around 60% were fabricated and the spectrum response characteristics of the cells are discussed.

Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition

Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get highly qualitical 4H-SiC epilayers.Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates is performed at 1500℃ with a pressure of 1.3×103Pa by using the step-controlled epitaxy.The growth rate is controlled to be about 1.0μm/h.The surface morphologies and structural and optical properties of 4H-SiC epilayers are characterized with Nomarski optical microscope,atomic force microscopy (AFM),X-ray diffraction,Raman scattering,and low temperature photoluminescence (LTPL).N-type 4H-SiC epilayers are obtained by in-situ doping of NH3 with the flow rate ranging from 0.1 to 3sccm.SiC p-n junctions are obtained on these epitaxial layers and their electrical and optical characteristics are presented.The obtained p-n junction diodes can be operated at the temperature up to 400℃,which provides a potential for high-temperature applications.

Optical study on the coupled GaAsSb/GaAs double quantum wells

The structural and optical properties of GaAsSb/GaAs-based quantum wells (QWs) are investigated. The interface quality of GaAsSb/GaAs/GaAsP coupled double (CD) QW structures is improved due to the strain compensation of epitaxial layers. The CD QWs possess a W-shape of energy band structure, and the optical properties display the features characteristic of a type-IQW when the GaAsSb layer thickness is thin enough.

Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC

Homoepitaxial growth of SiC on a Si-face (0 0 0 1) GH-SIC substrate has been performed in a modified gas-source molecular beam epitaxy system with Si2H6 and C2H4 at temperatures ranging 1000 1450 degreesC while keeping a constant SiC ratio (0.7) in the gas phase. X-ray diffraction patterns, Raman scattering measurements. and low-temperature photoluminescence spectra showed single-crystalline SiC. Mesa-type SiC p-n junctions were obtained on these epitaxial layers, and their I-V characteristics are presented. (C) 2001 Elsevier Science B.V. All rights reserved.

Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition

We present some results on the effect of initial buffer layer on the crystalline quality of Cubic GaN epitaxial layers grown on GaAs(100) substrates by metalorganic chemical vapor deposition. Photoluminescence and Hall measurements were performed to characterize the electrical and optical properties of cubic GaN. The crystalline quality subsequently grown high-temperature (HT) cubic GaN layers strongly depended on thermal effects during the temperature ramping process after low temperature (LT) growth of the buffer layers. Atomic force microscope (AFM) and reflection high-energy electron diffraction (RHEED) were employed to investigate this temperature ramping process. Furthermore, the role of thermal treatment during the temperature ramping process was identified. Using the optimum buffer layer, the full width at half maxim (FWHM) at room temperature photoluminescence 5.6 nm was achieved. To our knowledge, this is the best FWHM value for cubic GaN to date. The background carrier concentration was as low as 3 x 10(13) cm(-3). (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Surface transformation and inversion domain boundaries in gallium nitride nanorods

Phase transformation and subdomain structure in [0001]-oriented gallium nitride (GaN) nanorods of different sizes are studied using molecular dynamics simulations. The analysis concerns the structure of GaN nanorods at 300 K without external loading. Calculations show that a transformation from wurtzite to a tetragonal structure occurs along {0110} lateral surfaces, leading to the formation of a six-sided columnar inversion domain boundary (IDB) in the [0001] direction of the nanorods. This structural configuration is similar to the IDB structure observed experimentally in GaN epitaxial layers. The transformation is significantly dependent on the size of the nanorods.

Controlling factors for the occurrence of heteroepitaxy of polyethylene on highly oriented isotactic polypropylene

The controlling factors for the epitaxial crystallization of high-density polyethylene (HDPE) on highly oriented isotactic polypropylene (iPP) substrates have been studied in detail by means of transmission electron microscopy and electron diffraction. The results obtained in this work indicate that the crystallization process must be considered in the investigation of epitaxial growth of polymers on polymeric substrates, because of the unique morphological and crystallization characteristics of polymers. Crystallization rate has an important effect on the epitaxial crystallization of polymers. Higher rates result in the formation of thicker epitaxial layers. Isothermal crystallization temperature is another factor affecting epitaxial growth of polymers. Lower temperatures are favorable to epitaxial crystallization of polymers. There exists a critical epitaxial temperature at given experimental conditions, above which no epitaxial growth occurs at all. The influence of crystal dimensions of both the substrates and the deposited polymers on epitaxial growth confirms that secondary nucleation is an important controlling factor for the occurrence of epitaxial crystallization in polymers. The requirement satisfying the secondary nucleation criterion is that the substrate crystal dimension in the matching direction must be greater than the crystal thickness of the deposited polymer. Once the requirement of the secondary nucleation is satisfied, subsequent epitaxial growth is based on the lamellar growth habit of the deposited polymer itself. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.

High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. However, high In content in InGaN layers will result in a significant degradation of the crystalline quality of the epitaxial layers. In addition, unlike other III-V compound semiconductors, the ratio of gallium to indium incorporated in InGaN is in general not a simple function of the metal atomic flux ratio, f[subscript Ga]/f[subscript In]. Instead, In incorporation is complicated by the tendency of gallium to incorporate preferentially and excess In to form metallic droplets on the growth surface. This phenomenon can definitely affect the In distribution in the InGaN system. Scanning electron microscopy, room temperature photoluminescence, and X-ray diffraction techniques have been used to characterize InGaN layer grown on InN and InGaN buffers. The growth was done on c-plane sapphire by MOCVD. Results showed that green emission was obtained which indicates a relatively high In incorporation.

Hybrid reflections in InGaP/GaAs(001) by synchrotron radiation multiple diffraction

Hybrid reflections (HRs) involving substrate and layer planes (SL type) [Morelhao et al., Appl. Phys. Len. 73 (15), 2194 (1998)] observed in Chemical Beam Epitaxy (CBE) grown InGaP/GaAs(001) structures were used as a three-dimensional probe to analyze structural properties of epitaxial layers. A set of (002) rocking curves (omega-scan) measured for each 15 degrees in the azimuthal plane was arranged in a pole diagram in phi for two samples with different layer thicknesses (#A -58 nm and #B - 370 nm) and this allowed us to infer the azimuthal epilayer homogeneity in both samples. Also, it was shown the occurrence of (1 (1) over bar3) HR detected even in the thinner layer sample. Mappings of the HR diffraction condition (omega:phi) allowed to observe the crystal truncation rod through the elongation of HR shape along the substrate secondary reflection streak which can indicate in-plane match of layer/substrate lattice parameters. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates

The optical properties of cubic GaN epitaxial layers were investigated by modulated photoreflectance (PR) and photoluminescence in the temperature interval from 5 to 300 K. The epilayers were grown on GaAs(001) substrates by molecular beam epitaxy using a nitrogen RIF-activated plasma source. The PR spectra show a transition which is well fitted using the third-derivative functional form of the unperturbed dielectric function, which we interpret as band-to-band transition. Our results allow determination of the temperature dependence of the main gap of c-GaN and give insights into the residual strain in the film, as well as allow us to estimate the binding energy of the complex formed by an exciton bound to a neutral acceptor. (C) 2003 Elsevier B.V. B.V. All rights reserved.

Hybrid reflections in InGaP/GaAs(001) by synchrotron radiation multiple diffraction

Hybrid reflections (HRs) involving substrate and layer planes (SL type) [Morelhao et al., Appl. Phys. Len. 73 (15), 2194 (1998)] observed in Chemical Beam Epitaxy (CBE) grown InGaP/GaAs(001) structures were used as a three-dimensional probe to analyze structural properties of epitaxial layers. A set of (002) rocking curves (omega-scan) measured for each 15 degrees in the azimuthal plane was arranged in a pole diagram in phi for two samples with different layer thicknesses (#A -58 nm and #B - 370 nm) and this allowed us to infer the azimuthal epilayer homogeneity in both samples. Also, it was shown the occurrence of (1 (1) over bar3) HR detected even in the thinner layer sample. Mappings of the HR diffraction condition (omega:phi) allowed to observe the crystal truncation rod through the elongation of HR shape along the substrate secondary reflection streak which can indicate in-plane match of layer/substrate lattice parameters. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Raman scattering study of zincblende InxGa1-xN alloys

We report on first-order micro-Raman and resonant micro-Raman scattering measurements on c-InxGa1-xN (0 ≤ x ≤ 0.31) epitaxial layers. We have found that both, the transverse-optical (TO) and longitudinal-optical (LO) phonons of InxGa1-xN alloy exhibit a one-mode-type behavior. Their frequencies at Γ lie on straight lines connecting the corresponding values obtained for the c-GaN and c-InN binary compounds. Evidence for phase separation is shown in the sample with the alloy composition x = 0.31. The Raman spectra, with excitation energy close to 2.4 eV, show an enhanced additional peak, with frequency between the values found for the LO and TO phonon modes of the C-In0.31Ga0.69N epitaxial layer. We ascribed this peak to the LO phonon mode of a minority phase with In content of ≈0.80.

Functional Mn-Mg-k cation complexes in GaN featured by Raman spectroscopy

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)