Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates
Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
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Data(s) |
20/05/2014
20/05/2014
01/05/2003
|
Resumo |
The optical properties of cubic GaN epitaxial layers were investigated by modulated photoreflectance (PR) and photoluminescence in the temperature interval from 5 to 300 K. The epilayers were grown on GaAs(001) substrates by molecular beam epitaxy using a nitrogen RIF-activated plasma source. The PR spectra show a transition which is well fitted using the third-derivative functional form of the unperturbed dielectric function, which we interpret as band-to-band transition. Our results allow determination of the temperature dependence of the main gap of c-GaN and give insights into the residual strain in the film, as well as allow us to estimate the binding energy of the complex formed by an exciton bound to a neutral acceptor. (C) 2003 Elsevier B.V. B.V. All rights reserved. |
Formato |
208-212 |
Identificador |
http://dx.doi.org/10.1016/S0022-0248(02)02517-4 Journal of Crystal Growth. Amsterdam: Elsevier B.V., v. 252, n. 1-3, p. 208-212, 2003. 0022-0248 http://hdl.handle.net/11449/37010 10.1016/S0022-0248(02)02517-4 WOS:000182145400031 |
Idioma(s) |
eng |
Publicador |
Elsevier B.V. |
Relação |
Journal of Crystal Growth |
Direitos |
closedAccess |
Palavras-Chave | #photoluminescence #photoreflectance #molecular beam epitaxy #GaN |
Tipo |
info:eu-repo/semantics/article |