InP-base resonant tunneling diodes
| Data(s) |
2009
|
|---|---|
| Resumo |
We have fabricated In_0.53Ga_0.47As/AlAs/InP resonant tunneling diodes (RTDs) based on the air-bridge technology by using electron beam lithography processing.The epitaxial layers of the RTD were grown on semi-insulating (100) InP substrates by molecular beam epitaxy.RTDs with a peak current density of 24.6 kA/cm~2 and a peak-to-valley current ratio of 8.6 at room temperature have been demonstrated. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Han Chunlin;Chen Chen;Zou Penghui;Zhang Yang;Zeng Yiping;Xue Fangshi;Gao Jianfeng;Zhang Zheng;Geng Tao.InP-base resonant tunneling diodes,半导体学报,2009,30(6):48-50 |
| Palavras-Chave | #半导体材料 |
| Tipo |
期刊论文 |
