Optical study on the coupled GaAsSb/GaAs double quantum wells

The structural and optical properties of GaAsSb/GaAs-based quantum wells (QWs) are investigated. The interface quality of GaAsSb/GaAs/GaAsP coupled double (CD) QW structures is improved due to the strain compensation of epitaxial layers. The CD QWs possess a W-shape of energy band structure, and the optical properties display the features characteristic of a type-IQW when the GaAsSb layer thickness is thin enough.

The structural and optical properties of GaAsSb/GaAs-based quantum wells (QWs) are investigated. The interface quality of GaAsSb/GaAs/GaAsP coupled double (CD) QW structures is improved due to the strain compensation of epitaxial layers. The CD QWs possess a W-shape of energy band structure, and the optical properties display the features characteristic of a type-IQW when the GaAsSb layer thickness is thin enough.

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Ansto Sims Lab.; Avt Vacuum & Cryogen Serv.; Coltron Syst Pty Ltd.; Heys Technol Int Pty Ltd.; IEEE, Elect Devices Soc.; IEEE, Lasers & Electro Opt Soc.; LASTEK Pty Ltd.; Oxford Instruments Plasma Technol Pty Ltd.; PANalytical.; PHILIPS ELECT.; SCITEK AUSTRALIA Pty Ltd.; WARSASH SCI Pty Ltd.

Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China

Ansto Sims Lab.; Avt Vacuum & Cryogen Serv.; Coltron Syst Pty Ltd.; Heys Technol Int Pty Ltd.; IEEE, Elect Devices Soc.; IEEE, Lasers & Electro Opt Soc.; LASTEK Pty Ltd.; Oxford Instruments Plasma Technol Pty Ltd.; PANalytical.; PHILIPS ELECT.; SCITEK AUSTRALIA Pty Ltd.; WARSASH SCI Pty Ltd.