Numerical simulations of crack tip fields in polycrystalline plastic solids

In this paper, modes I and II crack tip fields in polycrystalline plastic solids are studied under plane strain, small scale yielding conditions. Two different initial textures of an Al–Mg alloy, viz., continuous cast AA5754 sheets in the recrystallized and cold rolled conditions, are considered. The former is nearly-isotropic, while the latter displays distinct anisotropy. Finite element simulations are performed by employing crystal plasticity constitutive equations along with a Taylor-type homogenization as well as by using the Hill quadratic yield theory. It is found that significant texture evolution occurs close to the notch tip which profoundly influences the stress and plastic strain distributions. Also, the cold rolling texture gives rise to higher magnitude of plastic strain near the tip.

Numerical simulations of crack tip fields in polycrystalline plastic solids

In this paper, modes I and II crack tip fields in polycrystalline plastic solids are studied under plane strain, small scale yielding conditions. Two different initial textures of an Al-Mg alloy, viz.,continuous cast AA5754 sheets in the recrystallized and cold rolled conditions, are considered. The former is nearly-isotropic, while the latter displays distinct anisotropy. Finite element simulations are performed by employing crystal plasticity constitutive equations along with a Taylor-type homogenization as well as by using the Hill quadratic yield theory. It is found that significant texture evolution occurs close to the notch tip which profoundly influences the stress and plastic strain distributions. Also, the cold rolling texture gives rise to higher magnitude of plastic strain near the tip. (C) 2010 Elsevier Ltd. All rights reserved.

Elusive superconductivity in polycrystalline samples of layered lanthanum nickelates

La2-xNiO4, La2-xSrxNiO4 and related layered nickelates have been investigated for possible presence of superconductivity. While there is clear onset of diamagnetism around 20 K in many of these nickelates, we do not, however, find any anomaly in the electrical resistivity, magnetoresistance or thermopower around 20 K. High energy spectroscopic studies show Ni to be in the 2+ oxidation state accompanied by a substantial proportion of oxygen holes.

Breakdown in p‐n junction diodes made on polycrystalline silicon of large grain size

This communication describes the voltage‐current characteristics in the breakdown region of p‐n junctions made on polycrystalline silicon of large grain size. The observed soft breakdown characteristics have been explained by taking into account the effect of curvature of the junction near the grain boundaries.

I–U Characteristics of MOS Structures on Polycrystalline Silicon

Current-voltage (I–U) characteristics of MOS structures on polycrystalline silicon are investigated. A model based on the carrier transport through the traps in the oxide is described to explain the I–U characteristics.Es werden Strom-Spannungs(I–U)-Charakteristiken von MOS-Strukturen auf polykristallinem Silizium untersucht. Ein Modell zur Erklärung der I–U-Charakteristiken wird beschrieben, das auf dem Ladungstransport über Oxidtraps beruht.

Varistors based on polycrystalline ZnO:Cu

Sintered, polycrystalline ZnO ceramics with copper as the only additive exhibit highly nonlinear current‐voltage characteristics. Increasing nonlinearity index (α=4–45) with Cu concentration of 0.01–1 mol % is also variable with respect to ceramic processing methods. Incorporation of Cu in the ZnO lattice is indicated from the electron probe microanalysis and the photoluminescence spectra. Cu acceptors are compensated by holes in the grain boundary layers, whereas the concentration of intrinsic donors is higher in the grain interior. The presence of positive charges leads to thinning of the depletion region, resulting in nonlinear characteristics.

Impedance‐frequency characteristics of metal‐oxide‐semiconductor structures on polycrystalline silicon

This paper reports the variations in impedance with frequency of metal‐oxide‐semiconductor (MOS) structures on polycrystalline silicon. The origin of these impedance‐frequency characteristics are qualitatively explained. These characteristics indicate that the MOS structure on polycrystalline silicon can be exploited to realize voltage controlled filters.

Neutralization of phosphorus in polycrystalline silicon by hydrogenation

Experimental evidence that phosphorus in silicon is neutralized by hydrogenation is presented by measuring changes in sheet resistance and Hall mobility carrier in heavily phosphorus‐doped polycrystalline films.

Polycrystalline Lead Tin Chalcogenide Thin Film Grown by Spray Pyrolysis

PbSnS2 thin film has been prepared for the first time by spray pyrolysis technique on FTO substrate at 570K. The preliminary optical and structural characteristics of the film have been reported. The optical studies showed that the value of the fundamental absorption edge lies at 1.47eV and a low energy absorption band tail has been observed. The prepared film is p- type electrical conductivity, polycrystalline in nature and has an orthorhombic crystal structure. The value of an average grain size of the film is 350Å.

Electromagnetic wave propagation at the interface between two polar semiconductors

The interface between two polar semiconductors can support three types of phonon-plasmon-polariton modes propagating in three well-defined frequency windows ??1?[min(?1,?3),?R1], ??2?[max(?2,?4),?R2], and ??3?[min(?2,?4),?R3]. The limiting frequencies ?1,2,3,4 are defined by ?1(?)=0, ?2(?)=0, and ?R1,2,3 by ?1(?)+?2(?)=0, where ?i(?) are dielectric functions of the two media with i=1,2. The dispersion, decay distances, and polarization of the three modes are discussed. The variation of the limiting frequencies with the interface plasma parameter ???p22/?p12 reveals an interesting feature in the dispersion characteristics of these modes. For the interfaces for which the bulk coupled phonon-plasmon frequencies of medium 1 are greater than the LO frequency or are less than the TO frequency of medium 2, there exist two values of ?=?1 and ?2(

Effect of Strain Rate on Evolution of the Deformation Microstructure and Texture in Polycrystalline Copper and Nickel

The evolution of crystallographic texture in polycrystalline copper and nickel has been studied. The deformation texture evolution in these two materials over seven orders of magnitude of strain rate from 3 x 10(-4) to similar to 2.0 x 10(+3) s(-1) show little dependence on the stacking fault energy (SFE) and the amount of deformation. Higher strain rate deformation in nickel leads to weakerh < 101 > texture because of extensive microband formation and grain fragmentation. This behavior, in turn, causes less plastic spin and hence retards texture evolution. Copper maintains the stable end < 101 > component over large strain rates (from 3 x 10(-4) to 10(+2) s(-1)) because of its higher strain-hardening rate that resists formation of deformation heterogeneities. At higher strain rates of the order of 2 x 10(+3) s(-1), the adiabatic temperature rise assists in continuous dynamic recrystallization that leads to an increase in the volume fraction of the < 101 > component. Thus, strain-hardening behavior plays a significant role in the texture evolution of face-centered cubic materials. In addition, factors governing the onset of restoration mechanisms like purity and melting point govern texture evolution at high strain rates. SFE may play a secondary role by governing the propensity of cross slip that in turn helps in the activation of restoration processes.

Comparison of the effect of processing parameters and degradation on the DC and microwave properties of thin films and polycrystalline bulk high-Tc superconducting materials

The sharp increase in microwave power loss (the reverse of what has previously been reported) at the transition temperature in high-Tc superconducting systems such as YBaCu oxide (polycrystalline bulk and thin films obtained by the laser ablation technique) and BiPbSrCaCu oxide is reported. The differences between DC resistivity ( rho ) and the microwave power loss (related to microwave surface resistance) are analysed from the data obtained by a simultaneous measurement set-up. The influence of various parameters, such as preparation conditions, thickness and aging of the sample and the probing frequency (6-18 GHz), on the variation of microwave power loss with temperature is outlined.

Effect of High Pressure on the Electrical Conductivity of TlInX2 (X = Se, Te) Layered Semiconductors

The dc electrical conductivity of TlInX2 (X = Se, Te) single crystals, parallel and perpendicular to the (001) c-axis is studied under high quasi-hydrostatic pressure up to 7.0 GPa, at room temperature. Conductivity measurements parallel to the c-axis are carried out at high pressures and down to liquid nitrogen temperatures. These materials show continuous metallization under pressure. Both compounds have almost the same pressure coefficient of the electrical activation energy parallel to the c-axis, d(ΔE∥)/dP = −2.9 × 10−10 eV/Pa, which results from the narrowing of the band gap under pressure. The results are discussed in the light of the band structure of these compounds.

Thickness-dependent fcc-hcp phase transformation in polycrystalline titanium thin films

Polycrystalline Ti thin films are shown to gradually transform from face-centered cubic (fcc) to hexagonal close-packed structure (hcp) with increasing film thickness. Diffraction stress analysis revealed that the fcc phase is formed in a highly compressive hcp matrix (>= 2 GPa), the magnitude of which decreases with increasing film thickness. A correlation between stress and crystallographic texture vis-a-vis the fcc-hcp phase transformation has been established. The total free energy change of the system upon phase transformation calculated using the experimental results shows that the fcc-hcp transformation is theoretically possible in the investigated film thickness regime (144-720 nm) and the hcp structure is stable for films thicker than 720 nm, whereas the fcc structure can be stabilized in Ti films much thinner than 144 nm. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.