I–U Characteristics of MOS Structures on Polycrystalline Silicon
| Data(s) |
16/02/1989
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|---|---|
| Resumo |
Current-voltage (I–U) characteristics of MOS structures on polycrystalline silicon are investigated. A model based on the carrier transport through the traps in the oxide is described to explain the I–U characteristics.Es werden Strom-Spannungs(I–U)-Charakteristiken von MOS-Strukturen auf polykristallinem Silizium untersucht. Ein Modell zur Erklärung der I–U-Charakteristiken wird beschrieben, das auf dem Ladungstransport über Oxidtraps beruht. |
| Formato |
application/pdf |
| Identificador |
http://eprints.iisc.ernet.in/31478/1/char.pdf Lakshmi, MVS and Ramkumar, K (1989) I–U Characteristics of MOS Structures on Polycrystalline Silicon. In: Physica Status Solidi A, 111 (2). 667 -674. |
| Publicador |
John Wiley and Sons |
| Relação |
http://onlinelibrary.wiley.com/doi/10.1002/pssa.2211110234/abstract http://eprints.iisc.ernet.in/31478/ |
| Palavras-Chave | #Electrical Communication Engineering |
| Tipo |
Journal Article PeerReviewed |
