Neutralization of phosphorus in polycrystalline silicon by hydrogenation
| Data(s) |
15/04/1988
|
|---|---|
| Resumo |
Experimental evidence that phosphorus in silicon is neutralized by hydrogenation is presented by measuring changes in sheet resistance and Hall mobility carrier in heavily phosphorus‐doped polycrystalline films. |
| Formato |
application/pdf |
| Identificador |
http://eprints.iisc.ernet.in/32398/1/Neutralization.pdf Narayanan, Sankara EM and Annamalai, S and Sarma, GH and Iyer, Suman B and Kumar, Vikram (1988) Neutralization of phosphorus in polycrystalline silicon by hydrogenation. In: Journal of Applied Physics, 63 (8). pp. 2867-2868. |
| Publicador |
American Institute of Physics |
| Relação |
http://jap.aip.org/resource/1/japiau/v63/i8/p2867_s1 http://eprints.iisc.ernet.in/32398/ |
| Palavras-Chave | #Physics |
| Tipo |
Editorials/Short Communications PeerReviewed |
