Impedance‐frequency characteristics of metal‐oxide‐semiconductor structures on polycrystalline silicon


Autoria(s): Lakshmi , MVS; Ramkumar, K
Data(s)

01/02/1988

Resumo

This paper reports the variations in impedance with frequency of metal‐oxide‐semiconductor (MOS) structures on polycrystalline silicon. The origin of these impedance‐frequency characteristics are qualitatively explained. These characteristics indicate that the MOS structure on polycrystalline silicon can be exploited to realize voltage controlled filters.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/32292/1/Impedance-frequency.pdf

Lakshmi , MVS and Ramkumar, K (1988) Impedance‐frequency characteristics of metal‐oxide‐semiconductor structures on polycrystalline silicon. In: Journal of Applied Physics, 63 (3). 934 -937.

Publicador

American Institute of Physics

Relação

http://jap.aip.org/resource/1/japiau/v63/i3/p934_s1

http://eprints.iisc.ernet.in/32292/

Palavras-Chave #Electrical Communication Engineering
Tipo

Journal Article

PeerReviewed