979 resultados para Détection du soi
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2013
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2013
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Trotter, David, Albucasis, Traitier de Cyrurgie: Edition de la traduction en ancien fran?ais de la Chirurgie d'Abu'l Qasim Halaf Ibn ?Abbas al-Zahrawi du manuscrit BNF, fran?ais 1318 (Niemeyer, 2005)
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Trotter, David, 'Les manuscrits latins de la Chirurgia d'Albucasis et la lexicographie du latin m?di?val', Archivum Latinitatis Medii Aevi (Bulletin Du Cange) (2001) 59(1) pp.181-202 RAE2008
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Wydział Filologii Polskiej i Klasycznej: Instytut Filologii Polskiej
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Première edition revue, corrigée, et précédée d'une Préface à la Mosaïque, dans le plus nouveau goût.
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Dissertação de Mestrado apresentada à Universidade Fernando Pessoa como parte dos requisitos para obtenção do grau de Mestre em Psicologia, especialização em Psicologia da Educação e Intervenção Comunitária.
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Tese apresentada à Universidade Fernando Pessoa como parte dos requisitos para obtenção do grau de Doutor em Ciências Sociais, especialidade em Psicologia
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In this work by employing numerical three-dimensional simulations we study the electrical performance and short channel behavior of several multi-gate transistors based on advanced SOI technology. These include FinFETs, triple-gate and gate-all-around nanowire FETs with different channel material, namely Si, Ge, and III-V compound semiconductors, all most promising candidates for future nanoscale CMOS technologies. Also, a new type of transistor called “junctionless nanowire transistor” is presented and extensive simulations are carried out to study its electrical characteristics and compare with the conventional inversion- and accumulation-mode transistors. We study the influence of device properties such as different channel material and orientation, dimensions, and doping concentration as well as quantum effects on the performance of multi-gate SOI transistors. For the modeled n-channel nanowire devices we found that at very small cross sections the nanowires with silicon channel are more immune to short channel effects. Interestingly, the mobility of the channel material is not as significant in determining the device performance in ultrashort channels as other material properties such as the dielectric constant and the effective mass. Better electrostatic control is achieved in materials with smaller dielectric constant and smaller source-to-drain tunneling currents are observed in channels with higher transport effective mass. This explains our results on Si-based devices. In addition to using the commercial TCAD software (Silvaco and Synopsys TCAD), we have developed a three-dimensional Schrödinger-Poisson solver based on the non-equilibrium Green’s functions formalism and in the framework of effective mass approximation. This allows studying the influence of quantum effects on electrical performance of ultra-scaled devices. We have implemented different mode-space methodologies in our 3D quantum-mechanical simulator and moreover introduced a new method to deal with discontinuities in the device structures which is much faster than the coupled-mode-space approach.
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info:eu-repo/semantics/published
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info:eu-repo/semantics/nonPublished
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info:eu-repo/semantics/published