Regulation by hetC of genes required for heterocyst differentiation and cell division in Anabaena sp strain PCC 7120

Unlike those of the wild-type strain, proheterocysts of the Anabaena sp. strain PCC 7120 hetC strain keep dividing. ftsZ, the most critical cell division gene, is up-regulated in hetC proheterocysts. Heterocyst differentiation genes hglD, hglE, patB, nijB, and xisA are no longer expressed in the hetC mutant. hetC also regulates the expression of patA, a pattern formation gene.

Rapid establishment of pure lines of silver carp (Hypophthalmichthys molirix) and bighead carp (Aristichthys nobilis)

The diversity of gynogenetic, artificial sex reversal and natural silver carp and bighead carp is examined using randomly amplified polymorphic DNA (RAPD) method. All of the 187 bands are obtained and 19 (10.16%) of them are polymorphic in gynogenetic silver carp. Meanwhile 32 (15.61%) out of 205 bands are polymorphic in control group. In gynogenetic bighead carp a total of 232 bands are identified and 11 (4.74%) out of them are polymorphic, while 25 (10.37%) out of 241 bands are polymorphic in control group. The genetic distance of four populations is calculated and it is 0.102 and 0.023 for gynogenetic silver carp and gynogenetic bighead carp respectively. The values of natural silver carp and bighead carp are 0.161 and 0.104. From the UPGMA trees constructed based on genetic distance, the sex reversal individuals that match with the gynogenetic female individuals are picked out. A new breeding process of establishing a pure line is developed.

Seasonal population dynamics of parasitic copepods, Sinergasilus spp. on farmed fish in China

Seasonal population dynamics of parasitic copepods in the genus Sinergasilus on fanned silver carp Hypophthalmichthys molitrix, farmed bighead carp Aristichthys nobilis, and grass carp Ctenopharyngodon idellus were investigated in China. Changes in prevalence and abundance were seasonal with higher levels observed in summer. Reproduction of the copepods occurs from spring to early autumn as indicated by the higher ratio of gravid copepods. The frequency distribution of Sinergasilus polycolpus and S. major in their host populations can be fitted well with negative binomial distribution. (C) 2000 Elsevier Science B.V. All rights reserved.

Four-channel reconfigurable optical add-drop multiplexer based on photonic wire waveguide

We designed and fabricated a four-channel reconfigurable optical add-drop multiplexer based on silicon photonic wire waveguide controlled through thermo-optic effect. The effective footprint of the device is about 1000 x 500 mu m(2). The minimum insertion loss is about 10.7 dB and the tuning bandwidth about 17 nm. The average tuning power efficiency is about 6.187 mW/nm and the tuning speed about 24.4 kHz. The thermo-optic polarization-rotation effect is firstly reported in this paper. (C) 2009 Optical Society of America

1.55 mu m spot-size converter with monolithically integrated laser diode by conventional process

A novel 1.55 mum laser diode (LD) with monolithically integrated spot-size converter (SSC) is designed and fabricated using conventional photolithography and the chemical wet etching process. For the laser diode, a ridge double-core structure is employed. For the spot-size converter, a buried double-waveguide structure is incorporated. The laterally tapered active core is designed and optically combined with the thin passive core to control the size of the mode. The threshold current was measured to be 40 mA together with high slope efficiency of 0.35 W A(-1). The beam divergence angles in the horizontal and vertical directions were as small as 14.9degrees and 18.2degrees, respectively.

Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation

Raman scattering measurements have been carried out on ferromagnetic semiconductor Ga1-xMnxN prepared by Mn-ion implantation and post annealing. The Raman results obtained from the annealed and un-annealed Ga1-xMnxN demonstrate that crystalline quality has been improved in Ga1-xMnxN after annealing. Some new vibrational modes in addition to GaN-like modes are found in the Raman spectra measured from the Ga1-xMnxN where the GaN-like modes are found to be shifted in the higher frequency side than those measured from the bulk GaN. A new vibrational mode observed is assigned to MnN-like mode. Other new phonon modes observed are assigned to disorder-activated modes and Mn-related vibrational modes caused by Mn-ion implantation and post-annealing. (c) 2006 Elsevier Ltd. All rights reserved.

Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots

We have investigated the evolution of exciton state filling in InAs/GaAs quantum dot (QD) structures as a function of the excitation power density by using rnicro-photoluminescence spectroscopy at different temperatures. In addition to the emission bands of exciton recombination corresponding to the atom-like S, P and D, etc. shells of QDs, it was observed that some extra states V between the S and P shells, and D' between the P and D shells appear in the spectra with increasing number of excitons occupying the QDs at a certain temperature. The emergence of these inter-shell excitonic levels is power density and temperature dependent, which is an experimental demonstration of strong exciton-exciton exchange interaction, state hybridization, and coupling of a multi-exciton system in QDs. (c) 2006 Elsevier B.V. All rights reserved.

Effect of as interstitial diffusionon on the properties of undoped semi-insulating LECGaAs

Annealing was carried out at 950 and 1120 degreesC under various As pressure for undoped (ND) semi-insulating (SI) LECGaAs. The effects of annealing on native defects and electrical properties were investigated. Experimental results indicate that, after an annealing at 950 degreesC for 14 h under low As pressure, the Hall mobility decreases and the resistivity increases dramatically for the samples. These changes in electrical properties are due to the generation of intrinsic acceptor defects, and the generation of the intrinsic acceptor defects originates from the outdiffusion of As interstitial at high temperature. The generation of the intrinsic defects and these changes in electrical properties can be suppressed by increasing the applied As pressure during annealing. The concentration of the main donor defect E12 (AsGaVGa) can be decreased by about one order of magnitude by an evacuated annealing at 1120 degreesC for 2-8 h followed by a fast cooling. The decrease in E12 concentration can also be suppressed by increasing the As pressure during annealing.

Raman scattering from In1-x-yGaxAlyAs quaternary alloys

Raman scattering studies were reported of In1-x-yGaxAlyAs/InP lattice matched quaternary alloys. The quaternary alloys a.ere grown on (100) oriented InP substrates by MBE method. The composition and intensity dependence of optical phonon mode frequencies show that the quaternary alloys exhibit three-mode behavior, i.e. InAs-like, GaAs-like and AlAs-like modes. Polarization analysis of the Raman spectra shows that the LO phonon modes are Raman active in the depolarized configuration and Raman inactive in the polarized configuration. TO phonon modes were also observed due to disorder effects, resulting in the asymmetrical shapes of the Raman peaks of the optical phonons.

Alignment of threading dislocations in the In0.3Ga0.7As/GaAs superlattice

Threading dislocations in the III-V heterostructure system are investigated based on the observation of dislocations in the In0.3Ga0.7As/GaAs superlattice with transmission electron microscope. To explain both the presence and orientation of threading dislocations in the epilayers an alloy effect on the dislocation lines in ternary III-V compounds is proposed, and, in addition, a pseudo-stable state for threading dislocations in binary compounds is recognized. (C) 1998 Elsevier Science B.V. All rights reserved.

InAs quantum dots in InAlAs matrix on (001)InP substrates grown by molecular beam epitaxy

InAs quantum dots grown on InAlAs lattice-matched to (0 0 1) InP substrates by molecular beam epitaxy are investigated by double-crystal X-ray diffraction, photoluminescence and transmission electron microscopy. The growth process is found to follow the Stranski-Krastanow growth mode. The islands formation is confirmed by the TEM measurements. Strong radiative recombination from the quantum dots and the wetting layer is observed, with room temperature PL emission in the 1.2-1.7 mu m region, demonstrating the potential of the InAs/InAlAs QDs for optoelectronic device applications. (C) 1998 Elsevier Science B.V. All rights reserved.

Dependence of photoluminescence induced by carbon contamination on GeSi structure

We studied the dependence of photoluminescence induced by carbon contamination on the Ge/GeSi structure. It is found that a carbon and silicon defect complex may be formed in a special structure by opening the in situ high-energy electron diffraction test during growth. There is an important difference in the dependence of photoluminescence on the temperature between the defect complex in our samples and in bulk Si. where the impurity-active center is generated by high-energy electron (about several MeV) irradiation. The quenching temperature of the photoluminescence from the impurity-active center is higher in our Ge/GeSi structure than in bulk Si. The defect complex may serve as an impurity-active center for a possible application in making Si-based light-emitting diodes whose wavelength is around 1.3 mu m in the window of optical communication. (C) 1998 Elsevier Science B.V. All rights reserved.

Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation

Raman scattering measurements have been carried out on ferromagnetic semiconductor Ga1-xMnxN prepared by Mn-ion implantation and post annealing. The Raman results obtained from the annealed and un-annealed Ga1-xMnxN demonstrate that crystalline quality has been improved in Ga1-xMnxN after annealing. Some new vibrational modes in addition to GaN-like modes are found in the Raman spectra measured from the Ga1-xMnxN where the GaN-like modes are found to be shifted in the higher frequency side than those measured from the bulk GaN. A new vibrational mode observed is assigned to MnN-like mode. Other new phonon modes observed are assigned to disorder-activated modes and Mn-related vibrational modes caused by Mn-ion implantation and post-annealing. (c) 2006 Elsevier Ltd. All rights reserved.

Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots

We have investigated the evolution of exciton state filling in InAs/GaAs quantum dot (QD) structures as a function of the excitation power density by using rnicro-photoluminescence spectroscopy at different temperatures. In addition to the emission bands of exciton recombination corresponding to the atom-like S, P and D, etc. shells of QDs, it was observed that some extra states V between the S and P shells, and D' between the P and D shells appear in the spectra with increasing number of excitons occupying the QDs at a certain temperature. The emergence of these inter-shell excitonic levels is power density and temperature dependent, which is an experimental demonstration of strong exciton-exciton exchange interaction, state hybridization, and coupling of a multi-exciton system in QDs. (c) 2006 Elsevier B.V. All rights reserved.

a real-time path planning approach without the computation of cspace obstacles

An important concept proposed in the early stage of robot path planning field is the shrinking of the robot to a point and meanwhile expanding of the obstacles in the workspace as a set of new obstacles. The resulting grown obstacles are called the Configuration Space (Cspace) obstacles. The find-path problem is then transformed into that of finding a collision free path for a point robot among the Cspace obstacles. However, the research experiences obtained so far have shown that the calculation of the Cspace obstacles is very hard work when the following situations occur: 1. both the robot and obstacles are not polygons and 2. the robot is allowed to rotate. This situation is even worse when the robot and obstacles are three dimensional (3D) objects with various shapes. Obviously a direct path planning approach without the calculation of the Cspace obstacles is strongly needed. This paper presents such a new real-time robot path planning approach which, to the best of our knowledge, is the first one in the robotic community. The fundamental ideas are the utilization of inequality and optimization technique. Simulation results have been presented to show its merits.