Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots

We have investigated the evolution of exciton state filling in InAs/GaAs quantum dot (QD) structures as a function of the excitation power density by using rnicro-photoluminescence spectroscopy at different temperatures. In addition to the emission bands of exciton recombination corresponding to the atom-like S, P and D, etc. shells of QDs, it was observed that some extra states V between the S and P shells, and D' between the P and D shells appear in the spectra with increasing number of excitons occupying the QDs at a certain temperature. The emergence of these inter-shell excitonic levels is power density and temperature dependent, which is an experimental demonstration of strong exciton-exciton exchange interaction, state hybridization, and coupling of a multi-exciton system in QDs. (c) 2006 Elsevier B.V. All rights reserved.

We have investigated the evolution of exciton state filling in InAs/GaAs quantum dot (QD) structures as a function of the excitation power density by using rnicro-photoluminescence spectroscopy at different temperatures. In addition to the emission bands of exciton recombination corresponding to the atom-like S, P and D, etc. shells of QDs, it was observed that some extra states V between the S and P shells, and D' between the P and D shells appear in the spectra with increasing number of excitons occupying the QDs at a certain temperature. The emergence of these inter-shell excitonic levels is power density and temperature dependent, which is an experimental demonstration of strong exciton-exciton exchange interaction, state hybridization, and coupling of a multi-exciton system in QDs. (c) 2006 Elsevier B.V. All rights reserved.

zhangdi于2010-03-29批量导入

zhangdi于2010-03-29批量导入

Natl Nat Sci Fdn China.; Sci & Technol Commiss Shanghai Municipal.; Chinese Phys Soc.; Shanhai Phys Soc.; Chinese Luminescence Soc.; Surface Phys Lab.; Fudan Univ, Phys Dept & Synchrotron Radiat Res Ctr.; Univ Sci & Technol China, Natl Synchrotron Radiat Lab.; Natl Lab Infrared Phys, Shanghai Inst Tech Phys.; Changchun Inst Opt, Key Lab. Fudan Univ

Fudan Univ, Dept Phys, Surface Phys Lab, Shanghai 200433, Peoples R China; Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

Natl Nat Sci Fdn China.; Sci & Technol Commiss Shanghai Municipal.; Chinese Phys Soc.; Shanhai Phys Soc.; Chinese Luminescence Soc.; Surface Phys Lab.; Fudan Univ, Phys Dept & Synchrotron Radiat Res Ctr.; Univ Sci & Technol China, Natl Synchrotron Radiat Lab.; Natl Lab Infrared Phys, Shanghai Inst Tech Phys.; Changchun Inst Opt, Key Lab. Fudan Univ