Raman scattering from In1-x-yGaxAlyAs quaternary alloys


Autoria(s): Han HX; Wang ZP; Li GH; Xu SJ; Ding K; Liu NZ; Zhu ZM
Data(s)

1998

Resumo

Raman scattering studies were reported of In1-x-yGaxAlyAs/InP lattice matched quaternary alloys. The quaternary alloys a.ere grown on (100) oriented InP substrates by MBE method. The composition and intensity dependence of optical phonon mode frequencies show that the quaternary alloys exhibit three-mode behavior, i.e. InAs-like, GaAs-like and AlAs-like modes. Polarization analysis of the Raman spectra shows that the LO phonon modes are Raman active in the depolarized configuration and Raman inactive in the polarized configuration. TO phonon modes were also observed due to disorder effects, resulting in the asymmetrical shapes of the Raman peaks of the optical phonons.

Identificador

http://ir.semi.ac.cn/handle/172111/13180

http://www.irgrid.ac.cn/handle/1471x/65560

Idioma(s)

中文

Fonte

Han HX; Wang ZP; Li GH; Xu SJ; Ding K; Liu NZ; Zhu ZM .Raman scattering from In1-x-yGaxAlyAs quaternary alloys ,JOURNAL OF INFRARED AND MILLIMETER WAVES ,1998,17(3):187-191

Palavras-Chave #光电子学 #Raman scattering #quaternary alloys #InGaAlAs
Tipo

期刊论文