Alignment of threading dislocations in the In0.3Ga0.7As/GaAs superlattice
Data(s) |
1998
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Resumo |
Threading dislocations in the III-V heterostructure system are investigated based on the observation of dislocations in the In0.3Ga0.7As/GaAs superlattice with transmission electron microscope. To explain both the presence and orientation of threading dislocations in the epilayers an alloy effect on the dislocation lines in ternary III-V compounds is proposed, and, in addition, a pseudo-stable state for threading dislocations in binary compounds is recognized. (C) 1998 Elsevier Science B.V. All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Wu J .Alignment of threading dislocations in the In0.3Ga0.7As/GaAs superlattice ,JOURNAL OF CRYSTAL GROWTH ,1998,187(3-4):363-366 |
Palavras-Chave | #半导体材料 #GROWTH #INXGA1-XAS/GAAS #GAAS |
Tipo |
期刊论文 |