Alignment of threading dislocations in the In0.3Ga0.7As/GaAs superlattice


Autoria(s): Wu J
Data(s)

1998

Resumo

Threading dislocations in the III-V heterostructure system are investigated based on the observation of dislocations in the In0.3Ga0.7As/GaAs superlattice with transmission electron microscope. To explain both the presence and orientation of threading dislocations in the epilayers an alloy effect on the dislocation lines in ternary III-V compounds is proposed, and, in addition, a pseudo-stable state for threading dislocations in binary compounds is recognized. (C) 1998 Elsevier Science B.V. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/13196

http://www.irgrid.ac.cn/handle/1471x/65568

Idioma(s)

英语

Fonte

Wu J .Alignment of threading dislocations in the In0.3Ga0.7As/GaAs superlattice ,JOURNAL OF CRYSTAL GROWTH ,1998,187(3-4):363-366

Palavras-Chave #半导体材料 #GROWTH #INXGA1-XAS/GAAS #GAAS
Tipo

期刊论文