Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides

In order to improve the total-dose radiation hardness of the buried oxides(BOX) in the structure of separa tion-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI), nitrogen ions are implanted into the buried oxides with two different doses,2 × 1015 and 3 × 1015 cm-2 , respectively. The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co-60 source. Despite the small difference between the doses of nitrogen implantation, the nitrogen-implanted 2 × 1015 cm-2 BOX has a much higher hardness than the control sample (i. e. the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5 × 104rad(Si), whereas the nitrogen-implanted 3 × 1015 cm-2 BOX has a lower hardness than the control sample. However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5 × 104 to 5 × 105 rad (Si)). The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed. In addition, the abnormal HF C-V curve of the metal-silicon-BOX-silicon(MSOS) structure is observed and explained.

Metalorganic Chemical Vapor Deposition of GaNAs Alloy Using Dimethylhydrazine as Nitrogen Precursor

GaNAs alloy is grown by metalorganic chemical vapor deposition (MOCVD) using dimethylhydrazine (DMHy) as the nitrogen precursor. High-resolution X-ray diffraction (HRXRD) and secondary ion mass spectrometry (SIMS) are combined in determining the nitrogen contents in the samples. Room temperature photoluminescence (RTPL) measurement is also used in characterizing. The influence of different Ga precursors on GaNAs quality is investigated. Samples grown with triethylgallium (TEGa) have better qualities and less impurity contamination than those with trimethylgallium (TMGa). Nitrogen content of 5.688% is achieved with TEGa. The peak wavelength in RTPL measurement is measured to be 1278.5nm.

The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells

Photoluminescence (PL) spectra of GaInNAs/GaAs multiple quantum wells and GaInNAs epilayers grown on GaAs substrate show an apparent "S-shape" temperature-dependence of the of dominant luminescence peak. At low temperature and weak excitation conditions, a PL peak related to nitrogen cluster-induced bound states can be well resolved in the PL spectra. It displays a remarkable red shift of up to 60 meV and is thermally quenched below 100 K with increasing temperature, being attributed to N-cluster induced bound states. The indium incorporation exhibits significant effect on the cluster formation. The rapid thermal annealing treatment at 750 C can essentially remove the bound states-induced peak.

Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well

Effects of SiO2, encapsulation and rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs single quantum well (SQW) were studied by low temperature photoluminescence (PL). A blueshift of the PL peak energy for both the SiO2-capped region and the bare region was observed. The results were attributed to the nitrogen reorganization in the GaNAs/GaAs SQW. It was also shown that the nitrogen reorganization was obviously enhanced by SiO2 cap-layer. A simple model [1] was used to describe the SiO2-enhanced blueshift of the low temperature PL peak energy.

Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers

摘要: In order to improve the total-dose radiation hardness of the buried oxide of separation by implanted oxygen silicon-on-insulator wafers, nitrogen ions were implanted into the buried oxide with a dose of 10(16)cm(-2), and subsequent annealing was performed at 1100 degrees C. The effect of annealing time on the radiation hardness of the nitrogen implanted wafers has been studied by the high frequency capacitance-voltage technique. The results suggest that the improvement of the radiation hardness of the wafers can be achieved through a shorter time annealing after nitrogen implantation. The nitrogen-implanted sample with the shortest annealing time 0.5 h shows the highest tolerance to total-dose radiation. In particular, for the 1.0 and 1.5 h annealing samples, both total dose responses were unusual. After 300-krad(Si) irradiation, both the shifts of capacitance-voltage curve reached a maximum, respectively, and then decreased with increasing total dose. In addition, the wafers were analysed by the Fourier transform infrared spectroscopy technique, and some useful results have been obtained.

非豆科固氮树木色赤杨联合共生体的研究

非豆科树木共生固氮体系抗逆性强，具有耐干旱、耐盐碱、耐低PH、耐水湿等特点，且分布广泛，资源丰富，因此开展Frankia-非豆科树木联合共生体系的理论与应用研究，不仅对丰富和发展联合共生理论具有重要意义，而且在加速树木生长、解决农村资源短缺、减少水土流失、改良土壤和改善生态环境等方面将产生重大的经济和生态环境效益.该文通过对非豆科固氮树木色赤杨的菌根、根瘤联合共生体人工构建技术以及赤杨联合共生增效作用的研究，选择出色赤杨的最适共生菌根菌、弗兰克氏菌，为联合共生体接种技术在造林生产实践尤其是在逆境条件下的应用提供理论依据.

慢生型大豆根瘤菌GX201与固氮相关的putA、lrp基因的研究

该研究运用分子生物学方法，克隆并测定了慢生型大豆根瘤菌的putA、lrp基因序列，通过BLAST软件分析发现，lrp基因存在putA基因的上游且转录方向相反.将含有gus报告基因的转座子Tn5gusA5转座到以pLAFR3为载体的重组质粒pGXN300后，利用pLAFR3与pPHIJI质粒的不相容性建立了一套适合于慢生型大豆根瘤菌的转座子诱变体系，应用该体系诱变慢生型大豆根瘤菌GX201，成功地构建了putA、lrp基因的突变体GX20108和GX20120.根据已测定的慢生型大豆根瘤菌的putA、lrp基因序列，设计一对核苷酸引物，PCR扩增putA基因的调控调区，研究lrp基因与putA基因的相互作用机制，离体试验证明putA基因的启动子区存在一个与lrp基因相关蛋白结合区域.

半干旱地区固沙林土壤氮素转化及其有效性研究

土壤氮素（N）转化是生态系统关键的生态学过程之一；而土壤N有效性是沙地生态系统生产力和稳定性的关键限制性因子。以科尔沁沙地东南缘樟子松（pinus sylvestris var．mongolica）、赤松（P.densiflora）和小叶杨（populus simonii）固沙林以及草地为研究对象，采用野外试验和室内实验相结合的方法，全面系统地开展了凋落物分解、土壤N矿化、淋溶等过程及土壤N有效性的研究，旨在揭示半干旱区固沙林土壤N转化及其有效性的特征和机制，为沙地植被恢复、重建、管理和评价提供科学依据。主要结论如下：（1）采用网袋法进行凋落物的分解试验，结果表明不同类型凋落物乘量衰减、元索释放、质员变化均存在明显差异，分解第1年供N能力表现为小叶杨＞草＞樟子松＞赤松；（2）采用PVC顶盖理管法和离子交换树脂袋法分别研究了林地和草地土壤N矿化过程，结果表明土壤N矿化速率表现为小叶杨川章子松七赤松＞草地，N相对有效性表现为赤松＞樟子松＞草地全小叶杨；（3）草地和小叶杨林地土壤N潜在性淋济较高，而樟子松林地较轻；（4）土壤容重、pH值、养分、温度、水分、土壤微生物、土壤动物、林下植被等环境和生物因子反映区域土壤N转化及共有效性的一般特征，而强烈的人类干扰是引起生态系统问差异的关键因索：造林有利于提高沙地土壤N积累和有效性，但樟子松造林30年后才有明显效果：放牧地土壤N硝化速率及其有效性明显高于禁牧地，但质量下降，即NH4+-N/NO3--N失衡，不利于植物吸收、微生物调控和环境保护；（5）赤松、樟子松和小叶杨均为研究区固沙造林的可选树种，合理和科学管理有利于维护生态系统N平衡，实现．可持续经营。