Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers

摘要: In order to improve the total-dose radiation hardness of the buried oxide of separation by implanted oxygen silicon-on-insulator wafers, nitrogen ions were implanted into the buried oxide with a dose of 10(16)cm(-2), and subsequent annealing was performed at 1100 degrees C. The effect of annealing time on the radiation hardness of the nitrogen implanted wafers has been studied by the high frequency capacitance-voltage technique. The results suggest that the improvement of the radiation hardness of the wafers can be achieved through a shorter time annealing after nitrogen implantation. The nitrogen-implanted sample with the shortest annealing time 0.5 h shows the highest tolerance to total-dose radiation. In particular, for the 1.0 and 1.5 h annealing samples, both total dose responses were unusual. After 300-krad(Si) irradiation, both the shifts of capacitance-voltage curve reached a maximum, respectively, and then decreased with increasing total dose. In addition, the wafers were analysed by the Fourier transform infrared spectroscopy technique, and some useful results have been obtained.

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-11-02T01:09:51Z No. of bitstreams: 1 Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers.pdf: 848940 bytes, checksum: e8a22b738e1a7d6f0478e9736b943302 (MD5)

Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-11-02T02:02:21Z (GMT) No. of bitstreams: 1 Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers.pdf: 848940 bytes, checksum: e8a22b738e1a7d6f0478e9736b943302 (MD5)

Made available in DSpace on 2010-11-02T02:02:21Z (GMT). No. of bitstreams: 1 Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers.pdf: 848940 bytes, checksum: e8a22b738e1a7d6f0478e9736b943302 (MD5) Previous issue date: 2010

Project supported by the Doctoral Science Foundation of University of Jinan.

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Project supported by the Doctoral Science Foundation of University of Jinan.