Persistent organic pollutants in water and surface sediments of Taihu Lake, China and risk assessment

Organic pollutants, especially persistent organic pollutants were examined in the water and surface sediments of Taihu Lake, China. Both 12 water and 12 sediment samples were collected over the lake. C-18 solid-phase extraction technique was applied to extract organic pollutants in collected water samples. Soxhlet extraction procedure was used to extract organic pollutants in sediment samples. The analysis was performed by GC-MS controlled by a Hewlett Packard chemstation. Two hundred and seventy-three kinds of organic chemicals in water were examined, 200 more than that detected in 1985; 188 kinds of chemicals in sediments were detected as well. Among them 21 kinds of chemicals belong to priority pollutants as well as 17 kinds to be the endocrine disruptors. The concentrations of the pollutants were more than 2 times higher than that in 1985. The possible source and relation to anthropogenic activity were discussed. (C) 2002 Elsevier Science Ltd. All rights reserved.

Analysis of organchlorine compounds in water by solid phase microextraction and gas chromatography

In this work, both,solid phase microextraction (SPME) and solid phase extraction(SPE) were used to enrich organochlorine compounds in water samples and analyzed by gas chromatography with electron capture detector. The operating conditions of SPME have been studied and different kinds of solid phase were compared. Linear alkybenzene sulfonate(LAS) was added to the samples to investigate its effect on the analysis. The results indicated that polyacrylate was better than other commercial solid phases in extraction of moderated polar organic compounds and the sensitivity of SPME was higher than SPE. LAS affect much in liquid-liquid extraction and headspace SPME; but it has little effect on SPE and direct-SPME method. The applications showed that SPME was a fast and effective method in sample preparation.

A column method for determination of soil organic partition coefficients of eight pesticides

A column method was developed to conveniently and reliably determine the soil organic partition coefficients (K-oc) of three insecticides (methiocarb, azinphos-methyl, fenthion), four fungicides (triadimenol, fuberidazole, tebuconazole, pencycuron), and one herbicide (atrazine), in which real soil acted as a stationary phase and the water solution of pesticide as an eluent. The processes of sorption equilibrium were directly shown through a breakthrough curve(BTC). The log K-oc values are 1.69, 1.95, 2.25, 2.55, 2.69, 2.67, 3.10, and 3.33 for atrazine, triadimenol, methiocarb, fuberidazole, azinphos-methyl, tebuconazole, fenthion and pencycuron, respectively.

CONTRIBUTION OF BACTERIOPLANKTON, PHYTOPLANKTON, ZOOPLANKTON AND DETRITUS TO ORGANIC SESTON CARBON LOAD IN A CHANGJIANG FLOODPLAIN LAKE (CHINA)

The relative compositions of bacterioplankton, phytoplankton, zooplankton and detritus of seston were studied during the course of inundation in a floodplain lake of central Changjiang (China). Peaks in bacterial biomass developed shortly after flooding, coinciding with the initial leaching of organic nutrients from vegetation submerged under floodwater, and again at high water, shortly before the climax of phytoplankton biomass. Rods predominated the bacterial carbon biomass. Phytoplankton developed a postflood bloom at initial falling, corresponding to the drainage of the lake water into the river. While minimal biomass occurred during the advent of flooding, most likely due to disturbance and dilution. Algal biomass was usually dominated by Chlorophyta. Highest biomass of zooplankton was recorded at the end of the flooding in connection with the decline in turbidity, and once again at early drainage, closely associated with high phytoplankton biomass. Copepods (mainly nauplii) always constituted the majority of zooplankton carbon biomass. Peaks in detrital carbon concentrations were recorded at rising and falling water phases, corresponding respectively to the riverine discharge and decomposition of macrophyte mats. At rising water phase, CPOC was abundant. While during other water phases, this predominance was shifted to FPOC alone. Taken together, average contribution of bacterioplankton, phytoplankton, zooplankton and detritus to total seston carbon was 3.29, 21.21, 6.83 and 68.67 %, respectively.

High-quality GaNAs/GaAs quantum wells with light emission up to 1.44 mu m grown by molecular-beam epitaxy

High-quality GaNAs/GaAs quantum wells with high substitutional N concentrations, grown by molecular-beam epitaxy, are demonstrated using a reduced growth rate in a range of 0.125-1 mu m/h. No phase separation is observed and the GaNAs well thickness is limited by the critical thickness. Strong room-temperature photoluminescence with a record long wavelength of 1.44 mu m is obtained from an 18-nm-thick GaN0.06As0.94/GaAs quantum well. (C) 2005 American Institute of Physics.

Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer

The influences of a high-temperature (HT) AlN interlayer (IL) on the phase separation in crack-free AlGaN grown on GaN have been studied. The depth-dependent cathodoluminescence (CL) spectra indicate a relatively uniform Al distribution in the growth direction, but the monochromatic CL images and the CL spectra obtained by line scan measurements reveal a lateral phase separation in AlGaN grown on relatively thick HT-AlN ILs. Moreover, when increasing the thickness of HT-AlN IL, the domain-like distribution of the AlN mole fraction in AlGaN layers is significantly enhanced through a great reduction of the domain size. The morphology of mesa-like small islands separated by V trenches in the HT-AlN IL, and the grain template formed by the coalescence of these islands during the subsequent AlGaN lateral overgrowth, are attributed to be responsible for the formation of domain-like structures in the AlGaN layer. (c) 2005 American Institute of Physics.

Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy

The InGaNAs(Sb)/(GaNAs)/GaAs quantum wells (QWs) emitting at 1.3-1.55 mu m have been grown by molecular beam epitaxy (MBE). The parameters of the radio frequency (RF) such as RF power and flow rate are optimized to reduce the damages from the ions or energetic species. The growth temperature is carefully controlled to prevent the phase segregation and strain relaxation. The effects of Sb on the wavelength and quality are investigated. The GaNAs barrier is used to extend the wavelength and reduce the strain. A 1.5865 mu m InGaNAs(Sb)/GaNAs SQW edge emitting laser lasing at room temperature at continuous wave operation mode is demonstrated. (c) 2006 Elsevier B.V. All rights reserved.

Evolution of InAs/GaAs(001) islands during the two- to three-dimensional growth mode transition in molecular-beam epitaxy

A detailed observation was made using atomic force microscopy on the two- to three-dimensional (2D-3D) growth mode transition in the molecular-beam epitaxy of InAs/GaAs(001). The evolution of the 3D InAs islands during the 2D-3D mode transition was divided into two successive phases. The first phase may be explained in terms of a critical phenomenon of the second-order phase transition.

Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs

Periodical alignment of the InAs dots along the < 100 > and < 110 > directions was observed on an elastically relaxed InGaAs buffer layer grown at 500 and 450 degrees C, respectively, on the vicinal GaAs(001) substrate. Due to alignment along these directions, the InAs dots were arranged into a quasi-two-dimensional hexagonal lattice. Such a periodical arrangement of InAs dots may be explained in terms of modulation in strain as well as composition along [110] as observed by using cross-sectional transmission electron microscopy.

Synthesis and photoluminescence properties of vertically aligned ZnO nanorod-nanowall junction arrays on a ZnO-coated silicon substrate

Arrays of vertically well-aligned ZnO nanorod-nanowall junctions have been synthesized on an undoped ZnO-coated silicon substrate by a carbothermal reduction and vapour phase transport method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that the nanostructures are well-oriented with the c-axis perpendicular to the substrate. The room temperature photoluminescence (PL) spectrum of the as-prepared ZnO nanostructure reveals a dominant near-band-edge (NBE) emission peak and a weak deep level (DL) emission, which demonstrates its good optical properties. Temperature-dependent PL spectra show that both the intensity of NBE and DL emissions increased with decreasing temperature. The NBE emission at 3.27 eV is identified to originate from the radiative free exciton recombination. The possible growth mechanism of ZnO nanorod-nanowall junctions is also proposed.

High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD

High quality InGaAsP/InGaAsP multiple quantum wells ( MQWs) have been selectively grown by ultra-low-pressure (22 mbar) metal-organic chemical vapor deposition. A large bandgap energy shift of 46 nm and photoluminescence with FWHM less than 30 meV were obtained with a rather small mask width variation (15-30 mu m). In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks were employed, and the transition effect W the tapered region was also studied. The energy detuning of the tapered region was observed to be saturated at larger ratios of the mask width to the tapered region length.

High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD

An InGaAsP/InGaAsP multiple quantum wells (MQWs) selectively grown by ultra-low-pressure (22 mbar) metal-organic chemical vapor deposition was investigated in this article. A 46 nm photoluminescence peak wavelength shift was obtained with a small mask width variation (15-30 mu m). High-quality crystal layers with a photoluminescence (PL) ftill-width-at-half-maximum (FWHM) of less than 30 meV were achieved. Using novel tapered masks, the transition-effect of the tapered region was also studied. The energy detuning of the tapered region was observed to be saturated with the larger ratio of the mask width divided to the tapered region length. (C) 2005 Elsevier B.V. All rights reserved.

Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (1-00) substrates by using MOCVD

Self-assembled InAs quantum dots (QDs) are grown on vicinal GaAs (100) substrates by using metal-organic chemical vapour deposition (MOCVD). An abnormal temperature dependence of bimodal size distribution of InAs quantum dots is found. As the temperature increases, the density of the small dots grows larger while the density of the large dots turns smaller, which is contrary to the evolution of QDs on exact GaAs (100) substrates. This trend is explained by taking into account the presence of multiatomic steps on the substrates. The optical properties of InAs QDs on vicinal GaAs(100) substrates are also studied by photoluminescence (PL). It is found that dots on a vicinal substrate have a longer emission wavelength, a narrower PL line width and a much larger PL intensity.

High-precision determination of lattice constants and structural characterization of InN thin films

X-ray diffraction and Rutherford backscattering/channeling were used to characterize the crystalline quality of an InN layer grown on Al2O3(0001) Using metal-organic chemical-vapor deposition. A full width at half maximum of 0.27 degrees from an InN(0002) omega scan and a minimum yield of 23% from channeling measurements show that this 480-nm-thick InN layer grown at low temperature (450 degrees C) has a relatively good crystalline quality. High-resolution x-ray diffraction indicates that the InN layer contains a small fraction of cubic InN, besides the predominant hexagonal phase. From this InN sample, the lattice constants a=0.353 76 nm and c=0.570 64 nm for the hexagonal InN and a=0.4986 nm for the cubic InN were determined independently. 2 theta/omega-chi mapping and a pole figure measurement revealed that the crystallographic relationship among the cubic InN, the hexagonal InN, and the substrate is: InN[111]parallel to InN[0001]parallel to Al2O3[0001] and InN{110}parallel to InN{1120}parallel to Al2O3{1010}, and that the cubic InN is twinned. Photoluminescence measurements indicate that the band-gap energy of this sample is approximately 0.82 eV. (c) 2006 American Vacuum Society.

Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition

The Al composition of metalorganic chemical vapor deposition (MOCVD)-grown AlGaN alloy layers is found to be greatly influenced by the parasitic reaction between ammonia (NH3) and trimethylaluminum (TMAI). The growth process of AlN is carefully investigated by monitoring the in situ optical reflection. The abnormal dependencies of growth rate on growth temperature, reactor pressure, and flux of NH3 are observed and can be well explained by the effect of parasitic reaction. The increase of growth rate with increasing flux of TMAI is found to depend on the growth temperature and reactor pressure due to the presence of parasitic effect. A relatively low growth temperature and a reduced reactor pressure are suggested for the effective decrease of parasitic reaction during the MOCVD growth of AlN and probably lead to a more effective incorporation of Al into the AlGaN layers. (c) 2005 Elsevier B.V. All rights reserved.