Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs
| Data(s) |
2006
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|---|---|
| Resumo |
Periodical alignment of the InAs dots along the < 100 > and < 110 > directions was observed on an elastically relaxed InGaAs buffer layer grown at 500 and 450 degrees C, respectively, on the vicinal GaAs(001) substrate. Due to alignment along these directions, the InAs dots were arranged into a quasi-two-dimensional hexagonal lattice. Such a periodical arrangement of InAs dots may be explained in terms of modulation in strain as well as composition along [110] as observed by using cross-sectional transmission electron microscopy. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Jiao YH (Jiao Y. H.); Wu J (Wu J.); Xu B (Xu B.); Jin P (Jin P.); Hu LJ (Hu L. J.); Liang LY (Liang L. Y.); Ren YY (Ren Y. Y.); Wang ZG (Wang Z. G.) .Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs ,NANOTECHNOLOGY,2006 ,17(23):5846-5850 |
| Palavras-Chave | #半导体材料 #CHEMICAL-VAPOR-DEPOSITION #FIELD-EFFECT TRANSISTORS #QUANTUM-DOTS #SELF-ORGANIZATION #ISLANDS #NANOSTRUCTURES #SUPERLATTICES #GROWTH #SURFACE #GAAS(100) |
| Tipo |
期刊论文 |
