High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD
Data(s) |
2006
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Resumo |
High quality InGaAsP/InGaAsP multiple quantum wells ( MQWs) have been selectively grown by ultra-low-pressure (22 mbar) metal-organic chemical vapor deposition. A large bandgap energy shift of 46 nm and photoluminescence with FWHM less than 30 meV were obtained with a rather small mask width variation (15-30 mu m). In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks were employed, and the transition effect W the tapered region was also studied. The energy detuning of the tapered region was observed to be saturated at larger ratios of the mask width to the tapered region length. |
Identificador | |
Idioma(s) |
中文 |
Fonte |
Zhao Q; Pan JQ; Zhang J; Zhou F; Wang BJ; Wang LF; Bian J; An X; Zhao LJ; Wang W .High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD ,ACTA PHYSICA SINICA,2006,55(6):2982-2985 |
Palavras-Chave | #光电子学 #ultra-low-pressure #selective area growth #tapered mask #BANDGAP ENERGY CONTROL #INTEGRATED DFB LASER #EPITAXY |
Tipo |
期刊论文 |