Método experimental para determinação das capacitancias parasitas do motor de indução trifásico acionado por inversor MLP

A proposta deste trabalho é apresentar uma nova metodologia para determinação experimental das capacitancias parasitas do motor de indução trifásico de rotor em gaiola. As capacitancias parasitas fazem parte do circuito equivalente do motor para estudos de interferência eletromagnética causada no motor de indução em modo comum quando ele for acionado por inversor controlado por modulação por largura de pulsos (MLP). Os procedimentos propostos para o desenvolvimento deste novo método consistem em: a) determinação dos parâmetros do circuito equivalente do motor de indução trifásico, em regime permanente, através de ensaio em laboratório; b) estabelecer configurações de ligações entre o inversor MLP e o motor para medições das grandezas de interesse que são as seguintes: tensões de modo comum e de eixo, correntes de fuga e de eixo, através de circuito de medição desenvolvido para este fim; c) calcular os valores das capacitancias parasitas entre estator e carcaça do motor; estator e rotor; rotor e carcaça e de rolamento utilizando a expressão matemática da definição de capacitancia; d) utilizar o software Pspice para simular o sistema motor de indução trifásico, alimentado por inversor MLP, com os circuitos equivalentes em baixas e altas frequências; e) obter as formas de onda características do fenômeno de modo comum.

Raiva em morcegos insetívoros (Molossidae) do Sudeste do Brasil

Quatro casos positivos para a raiva foram diagnosticados em morcegos de três espécies de molossídeos (um Molossus molossus, um Nyctinomops laticaudatus e dois N. macrotis) do Estado de São Paulo, Brasil. Três deles foram encontrados durante o dia em locais visíveis e não habituais e o outro entrou pela janela, no início da noite. Quadro descritivo com 19 casos semelhantes, envolvendo oito espécies, é mostrado e indica que morcegos com comportamento atípico devem ser considerados como fortemente suspeitos de estarem doentes, possivelmente com raiva.

Orbital propagation for Brazilian satellites using NORAD models

The performance of the NORAD models for near Earth satellites (SGP, SGP4, SGP8) using two Brazilian flying satellites, SCD-1 and SCD-2, and the Chinese-Brazilian satellite CBERS-1 is compared. The achievable accuracy of such models is compared against the predicted 2-lines elements set for the satellites. Every week an updated fresh set of 2-lines elements for these satellites is made available through the Internet. About ten years of observations of the SCD-1 satellite are available and therefore solar activity influences on the orbit can be analyzed. Data are selected considering also orbital (for CBERS-1) and attitude (for SCD-2) maneuvers - (C) 2002 COSPAR. Published by Elsevier B.V. Ltd. All rights reserved.

ANALYTIC STUDY ON HIGH-VOLTAGE CROWBAR SYSTEM

Crowbar switches are largely used in plasma devices, such as field-reversed configuration (FRC) machines and tokamaks, to avoid energy return from the discharge coil to the capacitor bank. A method of identification of all resistances, inductances and currents involved in capacitor bank discharges using a crowbar is proposed based on the derivation of the general analytical form of the coil current. This analysis can also be used for optimization of the discharge, reducing the ripple amplitude inherent in the crowbar-switched current. Fitting results of the TC-1 UNICAMP FRC device are also presented in this work.

Thickness dependence of leakage current in BaBi2Ta2O9 thin films

BaBi2Ta2O9 thin films having a layered structure were fabricated by metalorganic solution deposition technique. The films exhibited good structural, dielectric, and insulating properties. The room temperature resistivity was found to be in the range of 10(12)-10(14) Omega cm up to 4 V corresponding to a field of 200 kV/cm across the capacitor for films annealed in the temperature range of 500-700 degrees C. The current-voltage (I-V) characteristics as a function of thickness for films annealed at 700 degrees C for 1 h, indicated bulk limited conduction and the log(I) vs V-1/2 characteristics suggested a space-charge-limited conduction mechanism. The capacitance-voltage measurements on films in a metal-insulator-semiconductor configuration indicated good Si/BaBi2Ta2O9 interface characteristics and a SiO2 thickness of similar to 5 nm was measured and calculated. (C) 1999 American Institute of Physics. [S0003-6951(99)00830-X].

Huge values of room-temperature dielectric constants in pellets of poly(3-methylthiophene)

Room temperature data of impedance and phase angle in pellets of electrochemically synthesized ClO4- doped poly(3-methylthiophene) (P3MT) were analyzed assuming the sample being represented by a parallel resistor-capacitor (RC) circuit or by a series RC circuit. The last assumption proved to be the correct one, and to confirm it we use the sample as the RC component of a resistor-capacitor-inductor series resonator. We discuss the possibility of this RC series behavior to be due to a charge-density wave characteristic also evidenced from the huge values of the low-frequency dielectric constant of the system.

Fluorescent lamp model based on equivalent resistances, considering the effects of dimming operation

This paper presents a new methodology for the determination of fluorescent lamp models based on equivalent resistances. One important feature of the proposed methodology is concerned with the inclusion of the filaments into the model, considering the effects of dimming operation on the equivalent resistances. The classical Series-Resonant Parallel-Loaded Half-Bridge inverter is used as the power stage of the ballast. Moreover, the variation of the inverter's switching frequency is the dimming technique assumed for the analyses. Results obtained with a F32T8 lamp indicate that the accuracy of the model is very satisfactory. Thus, the lamp models obtained with the proposed methodology have the potential to serve as an important tool for ballast designers, considering the necessity for evaluating the lamp/ballast compatibility, according to issues concerned to the operating conditions of the electrodes' filaments.

Synthesis and electrical characterization of CaBi2Nb2O9 thin films deposited on Pt/Ti/SiO2/Si substrates by polymeric precursor method

We report the successful deposition of CaBi2Nb2O9 (CBN) thin films on platinum coated silicon substrates by polymeric precursor method. The CBN thin films exhibited good structural, dielectric and CBN/Pt interface characteristics. The leakage current of the capacitor structure was around 0.15 A cm(-2) at an applied electric field of 30 kV cm(-1). The capacitance-voltage measurements indicated good ferroelectric polarization switching characteristics. The typical measured small signal dielectric constant and the dissipation factor at a frequency of 100 kHz were 90 and 0.053, respectively. The remanent polarization and the drive voltage values were 4.2 C cm(-2) and 1.7 V at an applied voltage of 10 V. No significant fatigue was observed at least up to 10(8) switching cycles. (c) 2005 Elsevier B.V. All rights reserved.

Dipole moments in Langmuir monolayers from aromatic carboxylic acids

The three-layer capacitor model proposed by Demchak and Fort [J. Colloid Interface Sci. 46 (1974) 191] is employed to relate measured surface potentials of Langmuir monolayers from a series of polyphenyl carboxylic acids to molecular dipole moments calculated using semiempirical quantum methods. The effective dielectric constant at the air/monolayer interface is 3.0 +/- 0.6, very close to that estimated for aliphatic compounds. Good agreement between theory and experiment is obtained by adopting a dielectric constant of 6.4 for the monolayer/water interface and a contribution from the water reorientation of -0.064 +/- 0.006 D, which shows that the parameters in the DF model are essentially the same as for aliphatic amphiphiles, such as esters, acids, alcohols and ethers. (C) 2000 Elsevier B.V. B.V. All rights reserved.

Very large dielectric constant of highly oriented Pb1-xBaxTiO3 thin films prepared by chemical deposition

Highly (100) oriented Pb0.8Ba0.2TiO3/LaNiO3 structures were grown on LaAlO3(100) substrates by using a wet, soft chemical method and crystallized by the microwave oven technique. The Au/PBT/LaNiO3/LaAlO3 capacitor shows a hysteresis loop with remnant polarization, P-r, of 15 muC/cm(2), and coercive field, E-c, of 47 kV/cm at an applied voltage of 3 V, along with a dielectric constant over 1800. Atomic force microscopy showed that Pb0.8Ba0.2TiO3 is composed of large grains about 300 nm. The experimental results demonstrated that the microwave preparation is rapid, clean, and energy efficient. Therefore, we demonstrated that the combination of the soft chemical method with the microwave process is a promising technique to grow highly oriented thin films with excellent dielectric and ferroelectric properties, which can be used in various integrated device applications. (C) 2004 American Institute of Physics.

A Dielectric Model of Self-Assembled Monolayer Interfaces by Capacitive Spectroscopy

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Fatigue and retention properties of Bi3.25La0.75Ti3O12 films using LaNiO3 bottom electrodes

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Influence of Cu(II) in the SrSnO3 crystallization

Perovskite type oxides have been intensively studied due to their interesting optical, electrical, and catalytic properties. Among perovskites the alkaline earth stannates stand out, being strontium stannates (SrSnO3) the most important material in ceramic technology among them due to their wide application as dielectric component. SrSnO3 has also been applied as stable capacitor and humidity sensor. In the present work, SrSnO3:Cu was synthesized by polymeric precursor method and heat treated at 700, 800, and 900 A degrees C for 4 h. After that, the material was characterized by thermal analysis (TG/DTA), X-ray diffraction (XRD), infrared spectroscopy, and UV-vis spectroscopy. Results indicated three thermal decomposition steps and confirmed the presence of strontium carbonate and Cu2+ reduction to Cu+ at higher dopant amounts. XRD patterns indicated that the perovskite crystallization started at 700 A degrees C with strontiatite (SrCO3) and cassiterite (SnO2) as intermediate phases, disappearing at higher temperatures. The amount of secondary phase was reduced with the increase in the Cu concentration.

The dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu3Ti4O12 by means of tin doping

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Dielectric properties of soft chemical method derived CaCu3Ti4O12 thin films onto Pt/TiO2/Si(100) substrates

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)