A Dielectric Model of Self-Assembled Monolayer Interfaces by Capacitive Spectroscopy


Autoria(s): Goes, Marcio S.; Rahman, Habibur; Ryall, Joshua; Davis, Jason J.; Bueno, Paulo Roberto
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

20/05/2014

20/05/2014

26/06/2012

Resumo

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

The presence of self-assembled monolayers at an electrode introduces capacitance and resistance contributions that can profoundly affect subsequently observed electronic characteristics. Despite the impact of this on any voltammetry, these contributions are not directly resolvable with any clarity by standard electrochemical means. A capacitive analysis of such interfaces (by capacitance spectroscopy), introduced here, enables a clean mapping of these features and additionally presents a means of studying layer polarizability and Cole-Cole relaxation effects. The resolved resistive term contributes directly to an intrinsic monolayer uncompensated resistance that has a linear dependence on the layer thickness. The dielectric model proposed is fully aligned with the classic Helmholtz plate capacitor model and additionally explains the inherently associated resistive features of molecular films.

Formato

9689-9699

Identificador

http://dx.doi.org/10.1021/la301281y

Langmuir. Washington: Amer Chemical Soc, v. 28, n. 25, p. 9689-9699, 2012.

0743-7463

http://hdl.handle.net/11449/40770

10.1021/la301281y

WOS:000305661400061

Idioma(s)

eng

Publicador

Amer Chemical Soc

Relação

Langmuir

Direitos

closedAccess

Tipo

info:eu-repo/semantics/article