Thickness dependence of leakage current in BaBi2Ta2O9 thin films
Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
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Data(s) |
20/05/2014
20/05/2014
26/07/1999
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Resumo |
BaBi2Ta2O9 thin films having a layered structure were fabricated by metalorganic solution deposition technique. The films exhibited good structural, dielectric, and insulating properties. The room temperature resistivity was found to be in the range of 10(12)-10(14) Omega cm up to 4 V corresponding to a field of 200 kV/cm across the capacitor for films annealed in the temperature range of 500-700 degrees C. The current-voltage (I-V) characteristics as a function of thickness for films annealed at 700 degrees C for 1 h, indicated bulk limited conduction and the log(I) vs V-1/2 characteristics suggested a space-charge-limited conduction mechanism. The capacitance-voltage measurements on films in a metal-insulator-semiconductor configuration indicated good Si/BaBi2Ta2O9 interface characteristics and a SiO2 thickness of similar to 5 nm was measured and calculated. (C) 1999 American Institute of Physics. [S0003-6951(99)00830-X]. |
Formato |
552-554 |
Identificador |
http://dx.doi.org/10.1063/1.124419 Applied Physics Letters. Woodbury: Amer Inst Physics, v. 75, n. 4, p. 552-554, 1999. 0003-6951 http://hdl.handle.net/11449/33393 10.1063/1.124419 WOS:000081570400039 WOS000081570400039.pdf |
Idioma(s) |
eng |
Publicador |
American Institute of Physics (AIP) |
Relação |
Applied Physics Letters |
Direitos |
closedAccess |
Tipo |
info:eu-repo/semantics/article |