Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells

A wide bandgap and highly conductive p-type hydrogenated nanocrystalline silicon (nc-Si:H) window layer was prepared with a conventional RF-PECVD system under large H dilution condition, moderate power density, high pressure and low substrate temperature. The optoelectrical and structural properties of this novel material have been investigated by Raman and UV-VIS transmission spectroscopy measurements indicating that these films are composed of nanocrystallites embedded in amorphous SiHx matrix and with a widened bandgap. The observed downshift of the optical phonon Raman spectra (514.4 cm(-1)) from crystalline Si peak (521 cm(-1)) and the widening of the bandgap indicate a quantum confinement effect from the Si nanocrystallites. By using this kind of p-layer, a-Si:H solar cells on bare stainless steel foil in nip sequence have been successfully prepared with a V c of 0.90 V, a fill factor of 0.70 and an efficiency of 9.0%, respectively. (c) 2006 Elsevier B.V. All rights reserved.

Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

Hydrogenated nanocrystalline silicon (nc-Si:H) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) wafers. The nc-Si:H n-layers were deposited by radio-frequency (RF) plasma enhanced chemical vapor deposition (PECVD), and characterized using Raman spectroscopy, optical transmittance and activation energy of dark-conductivity. The nc-Si:H n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. Heterojunction solar cells incorporated with the nc-Si n-layer were fabricated using configuration of Ag (100 nm)/1T0 (80 nm)/n-nc-Si:H (15 nm)/buffer a-Si:H/p-c-Si (300 mu m)/Al (200 nm), where a very thin intrinsic a-Si:H buffer layer was used to passivate the p-c-Si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. The results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1% on an area of 2.43 cm(2). (c) 2006 Elsevier B.V. All rights reserved.

The study of high temperature annealing of a-SiC : H films

A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 A) gold film was evaporated on the half area of the aSiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100 degrees C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.

Characterization of polymorphous silicon thin film and solar cells

Polymorphous silicon (pm-Si:H) films have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the pm-Si:H has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. There are a blue shift for the stretching mode of IR spectra and a red shift for the wagging mode. The shifts are attributed to the variation of the microstructure. By using pm-Si:H film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51% and a stabilized efficiency of 8.01% (AM1.5, 100mw/cm(2)) at room temperature (T-R).

Influence of the rapid thermal annealing on the properties of thin a-Si films

The variation of the structure, morphology and the electrical properties of thin amorphous silicon films caused by Rapid Thermal Annealing is studied. The films annealed at 1200degreesC for 2 minutes change their structure to polycrystalline and as a result their resistivity decreases by 4 orders of magnitude. Due to the small thickness of the as deposited amorphous silicon the obtained poly-Si is strongly irregular and has many discontinuities in its texture.

The diphasic nc-Si/a-Si : H thin film with improved medium-range order

A series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (PECVD) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. The microstucture of the films was studied by micro-Raman and Fourier transform infrared (FTIR) spectroscopy. The influences of the hydrogen dilution ratio of silane (R-H = [H-2]/[SiH4]) and the substrate temperature (T-s) on the microstructural and photoelectronic properties of silicon films were investigated in detail. With the increase of RH from 10 to 100, a notable improvement in the medium-range order (MRO) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, H-2* and their congeries. With the increase of T-s from 150 to 275 degreesC, both the short-range order and the medium range order of the silicon films are obviously improved. The photoconductivity spectra and the light induced changes of the films show that the diphasic nc-Si/a-Si:H films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-Si:H films. (C) 2004 Elsevier B.V. All rights reserved.

Avaliação da reação de resistência à ferrugem da folha e do colmo à campo no germoplasma de azevém da Embrapa, safra 2006.

2007

Programa de melhoramento genético da raça Girolando: teste de progênie: Sumário de Touros 2009.

2009

Doenças do azevém.

2009

Compostagem de carcaças de grandes animais.

2010

Cuidados para o estabelecimento de árvores em sistemas de integração lavoura-pecuária-floresta.

2010

Necrose da medula: uma ameaça para o tomate estaqueado no Brasil.

2007

Ocorrência de Fusarium oxysporum f. sp. lycopersici raça 3 em tomate no Brasil e seleção de novas fontes de resistência ao patógeno.

A murcha-de-fusário, causada por Fusarium oxysporum f. sp. lycopersici (FOL), é uma importante doença do tomateiro (Lycopersicon esculentum Mill.) no mundo. Existem três raças identificadas do patógeno, sendo que a raça 3 ainda não havia sido registrada no Brasil. Este trabalho teve dois objetivos: comunicar a presença da raça 3 de FOL no Brasil e selecionar fontes de resistência às três raças do patógeno. Nove isolados de FOL foram obtidos de dois híbridos de tomate (Carmen e Alambra) com sintomas de mrucha, provenientes de três lavouras localizadas nos municípios de Venda Nova do Imigrante - Espírito Santo e Domingos Martins 9ES). Estes dois híbridos comerciais de tomate são considerados resistentes ás raças 1 e 2 de FOL. O teste de virulência foi feito com as cultivares: Ponderosa (suscetível a todasa as raças), IPA-5 (resistente à raça 1), Floradade (resistente às raças 1 e 2) e BHRS-2,3 (resistente às raças 1, 2 e 3). Todos os isolados foram virulentos às cultivares Ponderosa, IPA-R e Floradade e ainda infectaram algumas plantas de BHRS-2,3. O teste de virulência foi repetido com as mesmas cultivares mas também incluindo o acesso 'LA 716' da espécie selvagem L. pennellii. Foram obtidos resultados semelhantes para as cultivares, enquanto L. pennellii apresentou uma reação de imunidade ao patógeno. Estes resultadaos comprovam que os novos isolados de ES pertencem à raça 3 de FOL. Uma coleção de germoplasma de acessos de Lycopersicon spp. da Embrapa Hortaliças foi inicialmente avaliada quanto à reação de um dos isolados da raça 3 e uma parte deles às raças 1 e 2. Novas fontes de resistência múltipla foram identificadas em acessos de L. chilense, l. hirsutum e L. peruvianum, sendo dez genótipos imunes às raças 2 e 3 e cinco às três raças. A identificação destas fontes de resistência peermite que os programas de melhoramento de tomate antecipem potenciais problemas, inclusive a emergência de novas raças de FOL, além das raças 1, 2 e 3.

Dinâmica populacional de fungos benéficos em solos nos sistemas de cultivo convencional e orgânico de morangueiro.

2009

Coleta e conservação de germoplasma de espécies silvestres de Manihot no estado da Bahia para ampliação da coleção de trabalho da Embrapa Mandioca e Fruticultura.

Espécies silvestre de Manihot são importantes reservatórios de alelos de interesse a serem transferidos para a espécies cultivadas, visando ao desenvolvimento de variedades melhoradas com maior resistência a estresses causados por fatores bióticos e abióticos e que expressem maior produtividade (NASSAR, 2006).