The study of high temperature annealing of a-SiC : H films

A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 A) gold film was evaporated on the half area of the aSiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100 degrees C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.

A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 A) gold film was evaporated on the half area of the aSiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100 degrees C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.

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Portuguese Mat Soc.; Mat Network Atlantic Arc.; CiCECO.; BPI.; Bayer Mat Sci.; DURIT.; IZASA.; GIC.; Novagres.; Rauschert.; CRIOLAB CRYOGENICS Vacuum Syst Vacuum Chambers.; FCT.; NTI EUROPE.; Fdn Calouste Gulbenkian.; ScienTec.; ThermoLab.; Papelave.; cienciapt net.; Air Liquide. Univ Aveiro

Univ Nova Lisboa, Fac Ciencias & Tecnol, Dept Ciencia Mat, P-2829516 Caparica, Portugal; UNINOVA, CEMOP, P-2829516 Caparica, Portugal; Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, Beijing 100083, Peoples R China; Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100083, Peoples R China; Univ Aveiro, Dept Ceram & Glass Engn, P-3810193 Aveiro, Portugal

Portuguese Mat Soc.; Mat Network Atlantic Arc.; CiCECO.; BPI.; Bayer Mat Sci.; DURIT.; IZASA.; GIC.; Novagres.; Rauschert.; CRIOLAB CRYOGENICS Vacuum Syst Vacuum Chambers.; FCT.; NTI EUROPE.; Fdn Calouste Gulbenkian.; ScienTec.; ThermoLab.; Papelave.; cienciapt net.; Air Liquide. Univ Aveiro