Modification of C-doped a-SiO2 after Swift Heavy-Ion Irradiation

Amorphous SiO2 (a-SiO2) thin films were thermally grown on single-crystalline silicon. These a-SiO2/Si samples were first implanted (C-doped) with 100-keV carbon ion at room temperature (RT) at a dose of 5.0 x 10(17) C-ions/cm(2) and were then irradiated at RT by using 853 MeV Pb ions at closes of 5.0 x 10(11), 1.0 x 10(12), 2.0 x 10(12) and 5.0 x 10(12) Pb-ions/cm(2), respectively. The microstructures and the photoluminescence (PL) properties of these samples induced by Pb ions were investigated using fluorescence spectroscopy and transmission electron microscopy. We found that high-energy Pb-ion irradiation could induce the formation of a new phase and a change in the PL property of C-doped a-SiO2/Si samples. The relationship between the observed phenomena and the ion irradiation parameters is briefly discussed.

Competition in rotation-alignment between high-j neutrons and protons in transfermium nuclei

The study of rotation-alignment of quasiparticles probes sensitively the properties of high-j intruder orbits. The distribution of very-high-j orbits, which are consequences of the fundamental spin-orbit interaction, links with the important question of single-particle levels in superheavy nuclei. With the deformed single-particle states generated by the standard Nilsson potential, we perform Projected Shell Model calculations for transfermium nuclei where detailed spectroscopy experiments are currently possible. Specifically, we study the systematical behavior of rotation-alignment and associated band-crossing phenomenon in Cf, Fm, and No isotopes. Neutrons and protons from the high-j orbits are found to compete strongly in rotation-alignment, which gives rise to testable effects. Observation of these effects will provide direct information on the single-particle states in the heaviest nuclear mass region.

高电荷态离子126Xeq+引起GaN表面形貌变化研究

用不同电荷态的126Xeq+离子（9≤q≤30）在室温下轰击GaN晶体表面，经原子力显微镜分析表明，当q>18，辐照区域由隆起转为显著的刻蚀.被轰击后的GaN晶体表面形貌主要取决于入射离子的电荷态.同时，样品表面形貌还与入射离子的剂量和入射角有关；在实验参数范围，与入射离子的初动能没有明显关系（180 keV≤Ek≤600 keV）.当入射离子的电荷态q=18，与样品表面法线成60°角倾斜入射和垂直表面入射时，样品的表面几乎没有变化，只是倾斜入射后有很微小的隆起；当q＜18时，样品表面膨胀隆起，粗糙度增强，倾斜入射时表面隆起比垂直入射时更明显，而且都有清晰的峰状分界区；当q＞18时，样品表面被蚀刻呈凹陷状，有明显的齿状刻痕，且侵蚀深度与离子剂量近似呈线性关系，倾斜入射时的刻蚀深度大于垂直入射时的刻蚀深度.

Modification of ZnO films under high energy Xe-ion irradiations

ZnO films were deposited on (100) Si substrate by radio frequency magnetron sputtering. These films were irradiated at room temperature with 308 MeV Xe-ions to a fluence of 1.0 x 10(12), 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2). Then the samples were investigated using RBS, XRD, FESEM and PL analyses. The obtained experimental results showed that the deposited ZnO films were highly c-axis orientated and of high purity, 308 MeV Xe-ion irradiations could not change the c-axis oriented. The topography and PL properties of the ZnO films varied with increasing the Xe-ion irradiation fluence. For 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2) irradiated samples, surface cracks were observed. Furthermore, it was found that the 1.0 x 10(14) Xe/cm(2) irradiated sample exhibiting the strongest PL ability. The modification of structure and PL properties induced by 308 MeV Xe-ion irradiations were briefly discussed. (C) 2008 Elsevier B.V. All rights reserved.

Surface erosion of GaN bombarded by highly charged Pb-208(q+)-Ions

Surface change of gallium nitride specimens after bombardment by highly charged Pbq+-ions (q = 25, 35) at room temperature is studied by means of atomic force microscopy. The experimental results reveal that the surface of GaN specimens is significantly etched and erased. An unambiguous step-up is observed. The erosion depth not only strongly depends on the charge state of ions, but also is related to the incident angle of Pbq+-ions and the ion dose. The erosion depth of the specimens in 60 incidence (tilted incidence) is significantly deeper than that of the normal incidence. The erosion behaviour of specimens has little dependence on the kinetic energy of ion (E-k = 360, 700 keV). On the other hand, surface roughness of the irradiated area is obviously decreased due to erosion compared with the un-irradiated area. A fiat terrace is formed.

Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation

Amorphous SiO2 thin films with about 400-500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0 x 10(17),5.0 X 10(17) or 1.2 x 10(18) ions/cm(2), then irradiated at RT by 853 MeV Pb ions to 5.0 x 10(11), 1.0 X.10(12) 2.0 x 10(12) or 5.0 x 10(12) ions/cm(2), respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO2 films. For examples, 5.0 x 10(12) Pb-ions/cm(2) irradiation produced huge blue and green light-emitters in 2.0 x 10(17) C-ions/cm(2) implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0 x 10(17) carbon-ions/cm(2) implanted samples, 2.0 x 10(12) Pb-ions/cm(2) irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0 x 10(12) Pb-ionS/cm(2) irradiation could,create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2 x 10(18) carbon-ions/cm(2) implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type Of SiO2-based light-emission materials.

Modification of Fe/Cu multilayers under 400 keV Xe20+ irradiation

Two kinds of Fe/Cu multilayers with different modulation wavelength were deposited on cleaved Si(100) substrates and then irradiated at room temperature using 400 keV Xe20+ in a wide range of irradiation fluences. As a comparison, thermal annealing at 300-900 degrees C was also carried out in vacuum. Then the samples were analyzed by XRD and the evolution of crystallite structures induced by irradiation was investigated. The obtained XRD patterns showed that, with increase of the irradiation fluence, the peaks of Fe became weaker, the peaks related to Cu-based fcc solid solution and Fe-based bcc solid solution phase became visible and the former became strong gradually. This implied that the intermixing at the Fe/Cu interface induced by ion irradiation resulted in the formation of the new phases which could not be achieved by thermal annealing. The possible intermixing mechanism of Fe/Cu multilayers induced by energetic ion irradiation was briefly discussed.

beta-delayed proton decays and spin assignments for Sm-133 and Yb-149

The proton-rich isotope Sm-133 was produced via the fusion evaporation reaction Ca-40 + Ru-96. Its beta-delayed proton decay was studied by p-gamma coincidence in combination with a He-jet tape transport system, and half-lives, proton energy spectra, gamma-transitions following the proton emission, as well as beta-delayed proton branching ratios to the low-lying states in the grand-daughter nucleus were determined. Comparing the observed beta-delayed proton branching ratios with statistical model calculations, the best agreement is found assuming that only one level with the spin of 3/2 in Sm-133 decays or two levels with the spins of 1/2 and 5/2 decay with similar half-lives. The configuration-constrained nuclear potential energy surfaces of Sm-133 were calculated using the Woods-Saxon-Strutinsky method, which suggests a 1/2-ground state and a 5/2(+) isomer with an excitation energy of 120 keV. Therefore, the simple(EC+beta(+)) decay scheme of Sm-133 in Eur. Phys. J.A 11,277(2001) has been revised. In addition, our previous experimental data on the beta-delayed proton decay of Yb-149 reported in Eur. Phys. J. A 12,1 ( 2 0 0 1) was also analyzed using the same method. The spin-parity of Yb-149 is suggested to be 1/2(-).

Raman investigation of ion-implanted ZnO films

ZnO thin films were implanted at room temperature with 80 keV N+ or 400 keV Xe+ ions. The implantation fluences of N+ and Xe+ ranged from 5.0 x 10(14) to 1.0 x 10(17)/cm(2), and from 2.0 x 10(14) to 5.0 x 10(15)/cm(2), respectively. The samples were analyzed using Raman spectroscopy and the Raman scattering modes of the N- and Xe-ion implanted samples varying with implantation fluences were investigated. It was found that Raman peaks (bands) at 130 and 578 cm(-1) appeared in the spectra of ion-implanted ZnO samples, which are independent of the ion species, whereas a new peak at 274 cm(-1) was found only in N-ion implanted samples, and Raman band at 470 cm(-1) was found clearly in Xe-ion implanted samples. The relative intensity (peak area) increased with the increasing of the implantation fluences. From the comparison of the Raman spectra of N- and Xe-ion implanted ZnO samples and considering the damage induced by the ions, we analyzed the origin of the observed new Raman peaks (bands) and discussed the structure changes of ZnO films induced by N- and Xe-ion implantations.

Identification of a quasiparticle band in very neutron-rich Zr-104

The high spin levels of a very neutron-rich Zr-104 nucleus have been reinvestigated by measuring the prompt. rays in the spontaneous fission of Cf-252. The ground-state band has been confirmed. A new sideband has been identified with a band-head energy at 1928.7 keV. The projected shell model is employed to investigate the band structure of Zr-104. The results of calculated levels are in good agreement with the experimental data, and suggest that the new band in Zr-104 may be based on the neutron nu 5/2(-)[532] circle times nu 3/2(+)[411] configuration.

Extracting single-particle information for the superheavy mass region by studying excited structure in transfermium nuclei

Recent experimental advances have made it possible to study spectroscopy in very heavy nuclei. We show that from the excited high-spin structure of transfermium isotopes, one may gain useful information on single-particle states for the superheavy mass region, which is the key to locating the anticipated 'island of stability'. In this work, we employ the Projected Shell Model for Cf, Fm, and No isotopes to study rotation alignment of the particles that occupy particular high-j intruder orbitals.

Development of multi-channel gated integrator and PXI-DAQ system for nuclear detector arrays

A multi-channel gated integrator and PXI based data acquisition system have been developed for nuclear detector arrays with hundreds of detector units. The multi-channel gated integrator can be controlled by a programmable Cl controller. The PXI-DAQ system consists of NI PXI-1033 chassis with several PXI-DAQ cards. The system software has a user-friendly GUI which is written in C language using LabWindows/CVI under Windows XP operating system. The performance of the PXI-DAQ system is very reliable and capable of handling event rate up to 40 kHz. (C) 2010 Elsevier B.V. All rights reserved.

Gas-phase isothermal chromatography with short-lived technetium isotopes

In order to study the gas-phase chemical behavior of transactinides, an on-line isothermal chromatography apparatus has been developed and applied to separate short-lived technetium isotopes in the form of TcO3 from fission products. The fission products from a Cf-252 source were continuously and rapidly transported through the capillary to the isothermal chromatography apparatus using the N-2/KBr gas-jet techniques. Volatile oxide molecules were formed at the reaction zone kept at 900 degrees C since a trace amount of oxygen existed in the N-2 carrier gas. With the new developed isothermal chromatography apparatus, a selective separation of Tc from fission products was achieved. After isothermal chromatographic separation, Tc-101,Tc-103,Tc-104,Tc-105,Tc-106,Tc-107,Tc-108 were dominantly observed together with their Ru daughters in the gamma-spectrum, The chemical yields of Tc-101, and Tc-104 and Tc-105 isotopes with longer half-lives are about 55-57%, and those of Tc-103, Tc-106 and Tc-108 isotopes with shorter half-lives dropped down to 25-28%. The adsorption enthalpy of the investigated compounds on quartz surfaces was determined to be -150 +/- 5 kJ/mol by fitting the measured retention curves with a Monte Carlo model. The observed species of technetium oxide is attributed to TcO3, which is in good agreement with previous experimental results. That means our system worked properly and it can be used to investigate the gas-phase chemical behavior of transactinides.

Structural stability of C-60 films under the bombardment of 1.95 GeV Kr ions

The structural stability of C-60 films under the bombardment of 1.95 GeV Kr ions is investigated. The irradiated C-60 films were analyzed by Fourier Transform Infrared (FTIR) spectroscopy and Raman scattering technique. The analytical results indicate that the irradiation induced a decrease of icosahedral symmetry of C-60 molecule and damage of C-60 films; different vibration modes of C-60 molecule have different irradiation sensitivities; the mean efficient damage radius obtained from experimental data is about 1.47 nm, which is in good agreement with thermal spike model prediction.

缺中子核素133Sm、133Pr和93Pd的衰变

本硕士沦文籍助兰州重离子加速器国家实验室分离扇聚焦回旋加速器（SFC）提供的重离子束通过全融合蒸发反应产生远离口稳定线的缺中子核素，并用本课题组发展和建立的氦喷嘴快速带传输系统以及多重符合测量装置分离、测量核素来研究其衰变性质。在实验准备期间，曾采用~(252)Cf���进行了氦喷嘴（I－I eje咧央速带传输系统效率的测定。给出了PbI_2，PbCl_2，NaCl三种无机欲添加剂的传输效率，以及传输效率随目标核质量变化的初步结果。而后完成了以下两项物理实验：~(113)Sm的（EC＋β~+）衰变纲图和133Pr的同核异能态的研究：用SFC引出的~(40)Ca~(12+)束流轰击96%Ru的浓缩同位素靶，采用氦喷嘴带传输系统和x-γ与γ-γ符合测量方法，首次建议了~(133)Sm的简单的（EC＋β~+）衰变纲图并测得了其β衰变半衰期。~(133)Sm是目前发表过（EC＋β~+）衰变纲图的最轻的钐（Sm的缺中子核。由于Ru靶中含有~(98-102)Ru的成分，同时产生了~(133)Pr，并首次测定了~(133)Pr 11／2~－同核异能态的寿命为（l.1±0.2）s。为Pr奇A核11／2~-同核异能态的数据作了重要的补充，汇编成Pr奇A核的11／2一同核异能态和与之相关的3／2~＋，5／2~+和7／2~+能级的系统性数据。用单粒子模型理论拟合从中提取了~(131,133,135,137)Pr的11／2~-同核异能态的约化跃迁概率的实验值，并与Weisskopf近似估计进行了比较。2.~(93)Pd的β缓发质子衰变：通过~(58)Ni（~(40)Ca，3n2p）反应合成β缓发质了先驱核~(93)Pd，采用氦喷嘴带传输系统加p-γ符合观测到了它的β缓发质子衰李，测得其半衰期为1.3±0.2s。采用统计模型计算拟合了实验测得的口缓发质子能谱和布居到质子发射体子核不同终态的分支比，首次由实验数据出发初步指认了93Pd的基态自旋-宇称为9／2~±。同时与采用Woods-Saxon Strutinsky方法计算~(93)Pd的核位能面得到的结果进行了比较。计算结果支持对~(93)Pd基态自旋一宇称为9／2~+的实验指认。