Characterization of vertical Mo/diamond Schottky barrier diode from non-ideal I-V and C-V measurements based on MIS model

In this study, we investigated non-ideal characteristics of a diamond Schottky barrier diode with Molybdenum (Mo) Schottky metal fabricated by Microwave Plasma Chemical Vapour Deposition (MPCVD) technique. Extraction from forward bias I-V and reverse bias C- 2-V measurements yields ideality factor of 1.3, Schottky barrier height of 1.872 eV, and on-resistance of 32.63 mö·cm2. The deviation of extracted Schottky barrier height from an ideal value of 2.24 eV (considering Mo workfunction of 4.53 eV) indicates Fermi level pinning at the interface. We attributed such non-ideal behavior to the existence of thin interfacial layer and interface states between metal and diamond which forms Metal-Interfacial layer-Semiconductor (MIS) structure. Oxygen surface treatment during fabrication process might have induced them. From forward bias C-V characteristics, the minimum thickness of the interfacial layer is approximately 0.248 nm. Energy distribution profile of the interface state density is then evaluated from the forward bias I-V characteristics based on the MIS model. The interface state density is found to be uniformly distributed with values around 1013 eV - 1·cm- 2. © 2013 Elsevier B.V.

硅基MIS隧道二极管的研究

硅基MIS隧道发光二极管为制造用于超大规模集成电路的硅基发光器件提供了可能性。报道了MIS隧道发光二极管(MISLETD)的制作过程、电流－电压和发射光谱特性，讨论了负阻现象和发光机理。

金属/绝缘层/硅（MIS）隧道二极管的发光机理

金属/绝缘层/硅(MIS)隧道发光二极管的发光机理可以归结为表面等离极化激元(SPP)与界面粗糙度的耦合。电流－电压特性曲线中6.5V附近的一个负阻和发射光谱中475nm的峰显示，在硅/二氧化硅界面激发起了与之相应的等离子体振荡。

不同介质膜的InP MIS结构界面陷阱的研究

于2010-11-23批量导入

烟厂MIS中成本核算子系统实现时的几个重要问题

针对工厂企业中用微机实现管理信息系统(MIS)时,数据量大与数据处理速度慢、存储空间小之间的矛盾,本文论述了在不更新设备和不增加投资的条件下如何用软件方法来解决问题.在延吉卷烟厂成本核算子系统中的实践结果是:数据处理速度可提高到原来的2.24倍,所节省的存储空间相当于目前实际占用数的56%.

华北制药厂MIS: 生产－销售主流程的开发与实现

本文介绍了作者在参加华药管理信息系统的开发过程中，如何运用速成原型法完成生产－销售主流程的开发过程。同时对速成原型法在大型管理软件开发中的应用，做了有益的尝试。