Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G

High quality ZnO films have been successfully grown on Si(100) substrates by Metal-organic chemical vapor deposition (MOCVD) technique. The optimization of growth conditions (II-VI ratio, growth temperature, etc) and the effects of film thickness and thermal treatment on ZnO films' crystal quality, surface morphology and optical properties were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence (PL) spectrum, respectively. The XRD patterns of the films grown at the optimized temperature (300 degrees C) show only a sharp peak at about 34.4 degrees corresponding to the (0002) peak of hexagonal ZnO, and the FWHM was lower than 0.4 degrees. We find that under the optimized growth conditions, the increase of the ZnO films' thickness cannot improve their structural and optical properties. We suggest that if the film's thickness exceeds an optimum value, the crystal quality will be degraded due to the large differences of lattice constant and thermal expansion coefficient between Si and ZnO. In PL analysis, samples all displayed only ultraviolet emission peaks and no observable deep-level emission, which indicated high-quality ZnO films obtained. Thermal treatments were performed in oxygen and nitrogen atmosphere, respectively. Through the analysis of PL spectra, we found that ZnO films annealing in oxygen have the strongest intensity and the low FWHM of 10.44 nm(106 meV) which is smaller than other reported values on ZnO films grown by MOCVD.

Optical and structural properties of self-assembled ZnO QD chains by L-MBE

ZnO complex 3D nano-structures have been self-organized on Al2O3 (0 0 0 1) substrate by laser molecular beam epitaxy (L-MBE). It is shown by AFM morphology that the structure is composed of ID quantum dot chains (QDCs) and larger nano-islands at the nodes of QDCs. The formation mechanism of the nano-structure is also investigated. XRD results indicate that the nano-structure is highly c-axis oriented, with the aligned in-plane oriented domains. Time-integrated photoluminescence (TIPL) of the sample shows obvious blue-shift and broadening of the near band-edge (NBE) emission at room temperature, which are related to the quantum confinement effects. Time-resolved PL (TRPL) result shows bi-exponential decay behavior of ZnO QDCs, with a fast decay time of 38.21 ps and a low decay time of 138.19ps, respectively, which is considered to be originated from the interdot coupling made by coherent emission and reabsorption of the photons in QDCs. (C) 2007 Elsevier B.V. All rights reserved.

Optical and structural properties of anodized AlxGa1-xAs layers

The optical and structural properties of anodized AlxGa1-xAs films were investigated by using optical reflectance, X-ray photoemission and Auger electron spectroscopy (XPS and AES). II was found that the anodization process occurs progressively from the surface to the bulk of AlxGa1-xAs and the formed oxidation film comprises mainly oxides of Al and Ga together with a relatively small amount of As. The refractive indexes of the anodized Al0.8Ga0.2As film and Al0.8Ga0.2As film itself were deduced to be about 1.80 and 3.25, respectively, indicating that the anodization film is desirable for anti-reflection coating of the surface of AlxGa1-xAs/GaAs solar cells. (C) 1997 Elsevier Science S.A.

Assessment of the structural properties of GaAs/Si epilayers using X-ray (004) and (220) reflections

We improved the method previously used to determine the lattice constants and misorientation of GaAs/Si by recording the patterns of X-ray (004) and (220) reflections. The (220) reflection was measured from the (110) cross section of a GaAs/Si epilayer. The structural properties of the GaAs/Si epilayers grown by metal-organic chemical-vapor deposition (MOCVD) using an ultrathin a-Si buffer layer were investigated. The rotation angle of GaAs/Si epilayers grown by MOCVD using an a-Si buffer layer is very small and the lattice constants of these GaAs/Si epilayers agree quite well with elastic theory.

OPTICAL AND STRUCTURAL-PROPERTIES OF AP-MOVPE GAINP/GAAS HETEROSTRUCTURES

Lattice matched GaInP/GaAs heterostructures were grown by atmospheric pressure-metal organic vapor phase epitaxy (AP-MOVPE). Compositional intermixing of As/P and Ga/In near the heterointerfaces was studied by photoluminescence (PL) spectroscopy. Indium segregation, memory effect of In into GaAs and the carry-over of As in the GaInP layer during the growth process were considered as three major factors giving rise to the anomalous emissions in the PL spectra. Both thermal annealing and zinc doping strongly enhanced the compositional interdiffusion near the heterointerfaces.

Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing

A novel pulsed rapid thermal processing (PRTP) method has been used for realizing the solid-phase crystallization of amorphous silicon films prepared by PECVD. The microstructure and surface morphology of the crystallized films are investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results indicate that this PRTP is a suitable post-crystallization technique for fabricating large-area polycrystalline silicon films with good structural qualities such as large grain size, small lattice microstain and smooth surface morphology on low-cost substrate.

Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates

Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in situ scanning tunneling microscopy. Comparison is made between growth on nominally flat and vicinal substrate surfaces and the results reveal characteristic differences between the two. Ex situ transmission electron microscopy (TEM) and X-ray diffraction (XRD) rocking curve measurements of the films show lower density of defects and better structural quality of the vicinal film. We suggest the improved structural quality of the vicinal film is related to the characteristic difference in its initial stage nucleation and coalescence proccsses than that of the flat film.

Structural properties of SI-GaAs grown in space

The structural properties of Semi-insulating gallium arsenide (SI-GaAs) crystal grown with power-travelling technique in space have been studied by double-crystal x-ray diffractometry and chemical etching. The quality of the crystal was first evaluated by x-ray rocking-curve method. The full width at half maximum of x-ray rocking curve in space-grown SI-GaAs is 9.4+/-0.08 are seconds. The average density of dislocations revealed by molten KOH is 2.0 X 10(4) cm(-2), and the highest density is 3.1 X 10(4) cm(-2). The stoichiometry in the single crystal grown in space is improved as well. Unfortunately, the rear of the ingot grown in space is polycrystalline owing to being out of control of power. (C) 1999 COSPAR. Published by Elsevier Science Ltd.

The magnetic and structural properties of hydrothermal-synthesized single-crystal Sn1-xFexO2 nanograins

The crystal structure and magnetic properties of Sn1-xFexO2 nanograins synthesized by simple hydrothermal method using SnCl4 center dot 5H(2)O and FeCl3 center dot 6H(2)O as raw materials are studied. No secondary phase was found in the XRD spectrum. The linear change of lattice volume for different Fe content strongly supports that the Fe3+ substitutes Sn4+ in SnO2 lattice. A Raman and IR spectra study indicated that the Fe incorporates into the SnO2 lattice. Both ferromagnetic and paramagnetic signals are detected in the Mossbauer spectra. The Sn1-xFexO2 (x <= 0.10) samples show room-temperature ferromagnetism (RTFM) and the saturation magnetization increased with increasing Fe percent. Fe ions present three kinds of magnetic behaviors including paramagnetic, ferromagnetic, and antiferromagnetic in the samples observed by investigation of the M-H and M-T curves. The weak RTFM was due to only a fraction of Fe ions contributing to magnetic-order coupling mediated by oxygen vacancy.

Textural and structural properties of bioactive glasses in the system CaO-SiO2

Gel-derived CaO-SiO2 binary glasses of CaO mole fractions 0. 2, 0.3 and 0. 4 have been prepared and characterised. Pore diameter specific pore volume, skeletal density and porosity were found to increase with increasing CaO-content, whereas a concomitant decrease in specific surface area was observed. Si-29 NMR indicated that the 0.2 CaO mole fraction glass consisted of higly polymerized Q(4) and Q(3) silicate species, with some Q(2) units. With increasing CaO mole fraction, these silicate species became progressively depolymerised such that isolated SiO4 tetrahedra were detected within the 0.4 CaO glass matrix. Unusually, the glasses retained a proportion of Q(4) and Q(3) species as the CaO mole fraction was increased. All glass formulations exhibited in vitro bioactivity. The rate of hydroxyapatite precipitation followed the order 0.2 CaO > 0.4 CaO > > 0.3 CaO, an effect that is attributed to differences in the rate of dissolution of calcium from these glasses. This, in turn, appears to be dependent upon the proportion of Ca 21 participating in the formation of the glassy network.

Magnetic and structural properties of Co films deposited onto obliquely sputtered Pt underlayers

Co films deposited on obliquely sputtered Pt underlayers of 100 Angstrom or greater have produced coercivities in excess of 800 Oe, and anisotropy fields over 950 Oe. The coercivity and anisotropy field increase with Pt deposition angle and thickness. A Pt capping layer has a detrimental effect on properties but a Cu capping layer does not. Films with an obliquely deposited underlayer exhibit reduced density and increased interface roughness compared to normally deposited films. Normally deposited Pt underlayers display a (111) texture, while those deposited obliquely show an increasingly random texture with Pt thickness and deposition angle. The trilayers fabricated in this study are presented as candidates for use in giant magnetoresistance sensors. (C) 2002 American Institute of Physics.