Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates
Data(s) |
2002
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Resumo |
Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in situ scanning tunneling microscopy. Comparison is made between growth on nominally flat and vicinal substrate surfaces and the results reveal characteristic differences between the two. Ex situ transmission electron microscopy (TEM) and X-ray diffraction (XRD) rocking curve measurements of the films show lower density of defects and better structural quality of the vicinal film. We suggest the improved structural quality of the vicinal film is related to the characteristic difference in its initial stage nucleation and coalescence proccsses than that of the flat film. Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in situ scanning tunneling microscopy. Comparison is made between growth on nominally flat and vicinal substrate surfaces and the results reveal characteristic differences between the two. Ex situ transmission electron microscopy (TEM) and X-ray diffraction (XRD) rocking curve measurements of the films show lower density of defects and better structural quality of the vicinal film. We suggest the improved structural quality of the vicinal film is related to the characteristic difference in its initial stage nucleation and coalescence proccsses than that of the flat film. 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:13导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:13Z (GMT). No. of bitstreams: 1 2878.pdf: 1357762 bytes, checksum: 79a45c17f04f0eff136d9fc4cd897a9f (MD5) Previous issue date: 2002 Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China; Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
Identificador | |
Idioma(s) |
英语 |
Publicador |
WORLD SCIENTIFIC PUBL CO PTE LTD JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE |
Fonte |
Xie MH; Cheung SH; Zheng LX; Tong SY; Zhang BS; Yang H .Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates .见:WORLD SCIENTIFIC PUBL CO PTE LTD .INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (1-2),JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE ,2002,165-172 |
Palavras-Chave | #半导体材料 #MOLECULAR-BEAM EPITAXY |
Tipo |
会议论文 |